VISHAY BAV200, BAV201, BAV202, BAV203 User Manual
BAV200/BAV201/BAV202/BAV203
Small Signal Switching Diodes, High Voltage
Features
• Silicon epitaxial planar diodes
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/
95/EC and WEEE 2002/96/EC
Applications
• General purposes
Mechanical Data
Case: Quadro MELF glass case (SOD80)
Weight: approx. 34 mg
Cathode band color: black
Packaging codes/options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/2.5 k per 7" reel (8 mm tape), 12.5 k/box
e2
9612009
Vishay Semiconductors
Parts Table
Par t Type differentiation Ordering code Type marking Remarks
= 60 V
V
V
V
V
RRM
RRM
RRM
RRM
= 120 V
= 200 V
= 250 V
BAV200
BAV201
BAV202
BAV203
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Part Symbol Val ue Unit
Peak reverse voltage
Reverse voltage
Forward continuous current
= 1 s, Tj = 25 °C I
Peak forward surge current
Forward peak current f = 50 Hz
Power dissipation
t
p
BAV200-GS18 or BAV200-GS08 - Tape and reel
BAV201-GS18 or BAV201-GS08 - Tape and reel
BAV202-GS18 or BAV202-GS08 - Tape and reel
BAV203-GS18 or BAV203-GS08 - Tape and reel
BAV200
BAV201
BAV202
BAV203
BAV200
BAV201
BAV202
BAV203
V
V
V
V
RRM
RRM
RRM
RRM
V
V
V
V
I
F
FSM
I
FM
P
tot
R
R
R
R
60 V
120 V
200 V
250 V
50 V
100 V
150 V
200 V
250 mA
1A
625 mA
500 mW
Document Number 85544
Rev. 1.7, 25-Apr-08
For technical support, please contact: Diodes-SSP@vishay.com
www.vishay.com
1
BAV200/BAV201/BAV202/BAV203
Vishay Semiconductors
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Value Unit
Thermal resistance junction to ambient air
on PC board
50 mm x 50 mm x 1.6 mm
Junction temperature T
Storage temperature range T
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Part Symbol Min. Ty p. Max. Unit
= 100 mA V
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Differential forward resistance
Reverse recovery time
I
F
V
= 50 V
R
= 100 V
V
R
= 150 V
V
R
= 200 V
V
R
= 100 °C, VR = 50 V
T
j
= 100 °C, VR = 100 V
T
j
= 100 °C, VR = 150 V
T
j
= 100 °C, VR = 200 V
T
j
I
= 100 μA, tp/T = 0.01,
R
t
= 0.3 ms
p
= 0, f = 1 MHz C
V
R
I
= 10 mA r
F
= IR = 30 mA, iR = 3 mA,
I
F
= 100 Ω
R
L
BAV200
BAV201
BAV202
BAV203
BAV200
BAV201
BAV202
BAV203
BAV200
BAV201
BAV202
BAV203
R
thJA
j
stg
F
I
R
I
R
I
R
I
R
I
R
I
R
I
R
I
R
V
(BR)
V
(BR)
V
(BR)
V
(BR)
D
f
t
rr
500 K/W
175 °C
- 65 to + 175 °C
1000 mV
100 nA
100 nA
100 nA
100 nA
15 μA
15 μA
15 μA
15 μA
60 V
120 V
200 V
250 V
1.5 pF
5 Ω
50 ns
Typical Characteristics
T
= 25 °C, unless otherwise specified
amb
1000
100
Scattering Limit
10
1
0.1
R
I-Reverse Current (µA)
0.01
04080 120 160
94 9084
Tj-Junction Temperature (°C)
Figure 1. Reverse Current vs. Junction Temperature
www.vishay.com
2
VR = V
For technical support, please contact: Diodes-SSP@vishay.com
RRM
200
1000
Tj = 25 °C
100
10
1
F
I - Forward Current (mA)
0.1
0 0.4 0.8 1.2 1.6
94 9085
VF- Forward Voltage (V)
Scattering Limit
2.0
Figure 2. Forward Current vs. Forward Voltage
Document Number 85544
Rev. 1.7, 25-Apr-08
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