VISHAY BAV19WS-V, BAV20WS-V, BAV21WS-V User Manual

BAV19WS-V/20WS-V/21WS-V

Vishay Semiconductors

Small Signal Switching Diodes, High Voltage

Features

	• Silicon Epitaxial Planar Diodes
	•	For general purpose	e3
	•	These diodes are also available in other

case styles including: the DO35 case with the type designation BAV19 - BAV21, the MiniMELF case

with the type designation BAV100 - BAV103, the

20145

SOT23 case with the type designation BAS19 - BAS21 and the SOD123 case with the type designation BAV19W-V - BAV21W-V

•Lead (Pb)-free component

•Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Mechanical Data

Case: SOD323 Plastic case

Weight: approx. 5.0 mg

Packaging Codes/Options:

GS18/10 k per 13" reel (8 mm tape), 10 k/box

GS08/3 k per 7" reel (8 mm tape), 15 k/box

Parts Table

Part	Type differentiation	Ordering code	Type Marking	Remarks
BAV19WS-V	VR = 100 V	BAV19WS-V-GS18 or BAV19WS-V-GS08	A8	Tape and Reel
BAV20WS-V	VR = 150 V	BAV20WS-V-GS18 or BAV20WS-V-GS08	A9	Tape and Reel
BAV21WS-V	VR = 200 V	BAV21WS-V-GS18 or BAV21WS-V-GS08	AA	Tape and Reel

Document Number 85726	www.vishay.com
Rev. 1.4, 31-Jul-06	1

BAV19WS-V/20WS-V/21WS-V

Vishay Semiconductors

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

Parameter	Test condition	Part	Symbol	Value	Unit
Continuous reverse voltage		BAV19WS-V	VR	100	V
		BAV20WS-V	VR	150	V
		BAV21WS-V	VR	200	V
Repetitive peak reverse voltage		BAV19WS-V	VRRM	120	V
		BAV20WS-V	VRRM	200	V
		BAV21WS-V	VRRM	250	V
Forward continuous current	Tamb = 25 °C		IF	2501)	mA
Rectified current (average) half	Tamb = 25 °C		IF(AV)	2001)	mA
wave rectification with resist.
load
Repetitive peak forward current	f ≥ 50 Hz, θ = 180 °,		IFRM	6251)	mA
	Tamb = 25 °C
Surge forward current	t < 1 s, Tj = 25 °C		IFSM	1	A
Power dissipation	Tamb = 25 °C		Ptot	2001)	mW
1) Valid provided that leads are kept at ambient temperature

Thermal Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter	Test condition	Symbol	Value	Unit
Thermal resistance junction to		RthJA	6501)	K/W
ambient air
Junction temperature		Tj	1501)	°C
Storage temperature range		Tstg	- 65 to + 1501)	°C

1) Valid provided that leads are kept at ambient temperature

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter	Test condition	Part	Symbol	Min	Typ.	Max	Unit
Forward voltage	IF = 100 mA		VF			1.00	V
	IF = 200 mA		VF			1.25	V
Leakage current	VR = 100 V	BAV19WS-V	IR			100	nA
	VR = 100 V, Tj = 100 °C	BAV19WS-V	IR			15	µA
	VR = 150 V	BAV20WS-V	IR			100	nA
	VR = 150 V, Tj = 100 °C	BAV20WS-V	IR			15	µA
	VR = 200 V	BAV21WS-V	IR			100	nA
	VR = 200 V, Tj = 100 °C	BAV21WS-V	IR			15	µA
Dynamic forward resistance	IF = 10 mA		rf		5		Ω
Diode capacitance	VR = 0, f = 1 MHz		CD			1.5	pF
Reverse recovery time	IF = 30 mA, IR = 30 mA,		trr			50	ns
	Irr = 3 mA, RL = 100 Ω

www.vishay.com	Document Number 85726
2	Rev. 1.4, 31-Jul-06