VISHAY BAV19WS-V, BAV20WS-V, BAV21WS-V User Manual

BAV19WS-V/20WS-V/21WS-V
Small Signal Switching Diodes, High Voltage
• Silicon Epitaxial Planar Diodes
• For general purpose
• These diodes are also available in other case styles including: the DO35 case with the type designation BAV19 - BAV21, the MiniMELF case with the type designation BAV100 - BAV103, the SOT23 case with the type designation BAS19 ­BAS21 and the SOD123 case with the type desig­nation BAV19W-V - BAV21W-V
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Mechanical Data
Case: SOD323 Plastic case Weight: approx. 5.0 mg Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/3 k per 7" reel (8 mm tape), 15 k/box
e3
Vishay Semiconductors
20145
Parts Table
Part Type differentiation Ordering code Type Marking Remarks
BAV19WS-V
BAV20WS-V
BAV21WS-V
= 100 V
V
R
V
= 150 V
R
V
= 200 V
R
BAV19WS-V-GS18 or BAV19WS-V-GS08 A8 Tape and Reel
BAV20WS-V-GS18 or BAV20WS-V-GS08 A9 Tape and Reel
BAV21WS-V-GS18 or BAV21WS-V-GS08 AA Tape and Reel
Document Number 85726
Rev. 1.4, 31-Jul-06
www.vishay.com
1
BAV19WS-V/20WS-V/21WS-V
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Par t Symbol Val ue Unit
Continuous reverse voltage
Repetitive peak reverse voltage
= 25 °C I
Forward continuous current
Rectified current (average) half wave rectification with resist.
T
amb
T
= 25 °C I
amb
load
Repetitive peak forward current f 50 Hz, θ = 180 °,
T
= 25 °C
amb
Surge forward current
Power dissipation
1) Valid provided that leads are kept at ambient temperature
t < 1 s, T
T
= 25 °C I
j
= 25 °C P
amb
BAV19WS-V
BAV20WS-V
BAV21WS-V
BAV19WS-V
BAV20WS-V
BAV21WS-V
V
V
V
V
RRM
V
RRM
V
RRM
F(AV)
I
FRM
FSM
R
R
R
100 V
150 V
200 V
120 V
200 V
250 V
1)
F
250
200
625
1)
1)
mA
mA
mA
1A
1)
tot
200
mW
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Valu e Unit
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
1) Valid provided that leads are kept at ambient temperature
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Par t Symbol Min Ty p. Max Unit
Forward voltage I
Leakage current V
Dynamic forward resistance
Diode capacitance
Reverse recovery time I
= 100 mA V
F
= 200 mA V
I
F
= 100 V
R
= 100 V, Tj = 100 °C
V
R
= 150 V
V
R
= 150 V, Tj = 100 °C
V
R
= 200 V
V
R
= 200 V, Tj = 100 °C
V
R
I
= 10 mA r
F
= 0, f = 1 MHz C
V
R
= 30 mA, IR = 30 mA,
F
= 3 mA, RL = 100 Ω
I
rr
R
thJA
T
j
T
stg
BAV19WS-V
BAV19WS-V
BAV20WS-V
BAV20WS-V
BAV21WS-V
BAV21WS-V
F
F
I
R
I
R
I
R
I
R
I
R
I
R
f
D
t
rr
1)
650
1)
150
- 65 to + 150
K/W
°C
1)
°C
1.00 V
1.25 V
100 nA
15 µA
100 nA
15 µA
100 nA
15 µA
5 Ω
1.5 pF
50 ns
www.vishay.com
2
Document Number 85726
Rev. 1.4, 31-Jul-06
Loading...
+ 4 hidden pages