VISHAY BAV100, BAV101, BAV102, BAV103 Technical data
BAV100/101/102/103
Small Signal Switching Diodes, High Voltage
Features
• Silicon Epitaxial Planar Diodes
• Lead (Pb)-free component
• Component in accordance to
RoHS 2002/95/EC and WEEE 2002/96/EC
e2
Vishay Semiconductors
Applications
• General purposes
Mechanical Data
Case: MiniMELF Glass case (SOD80)
Weight: approx. 31 mg
Cathode Band Color: Black
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Par t Type differentiation Ordering code Type Marking Remarks
= 60 V
BAV100
BAV101
BAV102
BAV103
V
V
V
V
RRM
RRM
RRM
RRM
= 120 V
= 200 V
= 250 V
BAV100-GS18 or BAV100-GS08 - Tape and Reel
BAV101-GS18 or BAV101-GS08 - Tape and Reel
BAV102-GS18 or BAV102-GS08 - Tape and Reel
BAV103-GS18 or BAV103-GS08 - Tape and Reel
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Par t Symbol Val ue Unit
Repetitive peak reverse voltage BAV100
BAV101
BAV102
BAV103
Reverse voltage BAV100
BAV101
BAV102
BAV103
= 1 s I
Peak forward surge current
Repetitive peak forward current
Forward continuous current
Power dissipation
t
p
94 9371
V
V
V
V
RRM
RRM
RRM
RRM
V
V
V
V
FSM
I
FRM
P
60 V
120 V
200 V
250 V
R
R
R
R
I
F
tot
50 V
100 V
150 V
200 V
1A
625 mA
250 mA
500 mW
Document Number 85542
Rev. 1.6, 13-Feb-07
www.vishay.com
1
BAV100/101/102/103
Vishay Semiconductors
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Junction lead
Thermal resistance junction to ambient air on PC board
Junction temperature
Storage temperature range
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Part Symbol Min Ty p. Max Unit
= 100 mA V
Forward voltage
Reverse current
Breakdown voltage I
Diode capacitance
Differential forward resistance
Reverse recovery time I
I
F
= 50 V
V
R
= 100 V
V
R
= 150 V
V
R
= 200 V
V
R
= 100 °C, VR = 50 V
T
j
= 100 °C, VR = 100 V
T
j
= 100 °C, VR = 150 V
T
j
T
= 100 °C, VR = 200 V
j
= 100 µA, tp/T = 0.01,
R
= 0.3 ms
t
p
I
=100 µA, tp/T = 0.01,
R
= 0.3 ms
t
p
I
= 100 µA, tp/T = 0.01,
R
= 0.3 ms
t
p
= 0, f = 1 MHz C
V
R
= 10 mA r
I
F
= IR = 30 mA, iR = 3 mA,
F
= 100 Ω
R
L
50 mm x 50 mm x 1.6 mm
BAV100
BAV101
BAV102
BAV103
BAV100
BAV101
BAV102
BAV103
BAV100 V
BAV101 V
BAV102 V
BAV103 V
R
R
T
I
I
I
I
I
I
I
I
(BR)
(BR)
(BR)
(BR)
t
thJL
thJA
T
stg
F
R
R
R
R
R
R
R
R
D
f
rr
350 K/W
500 K/W
j
175 °C
- 65 to + 175 °C
1000 mV
100 nA
100 nA
100 nA
100 nA
15 µA
15 µA
15 µA
15 µA
60 V
120 V
200 V
250 V
1.5 pF
5 Ω
50 ns
Typical Characteristics
T
= 25 °C, unless otherwise specified
amb
1000
100
Scattering Limit
10
1
0.1
R
I-Reverse Current (µA)
0.01
04080 120 160
94 9084
Tj-Junction Temperature (°C)
Figure 1. Reverse Current vs. Junction Temperature
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2
VR = V
RRM
200
1000
Tj = 25 °C
100
10
1
F
I - Forward Current (mA)
0.1
0 0.4 0.8 1.2 1.6
94 9085
VF- Forward Voltage (V)
Scattering Limit
2.0
Figure 2. Forward Current vs. Forward Voltage
Document Number 85542
Rev. 1.6, 13-Feb-07
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