Vishay BAT86S Schematics

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Small Signal Schottky Diode
MECHANICAL DATA
Case: DO-35 Weight: approx. 125 mg Cathode band color: black Packaging codes/options:
TR/10K per 13" reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box
BAT86S
Vishay Semiconductors
FEATURES
• Integrated protection ring against static discharge
• Very low forward voltage
• AEC-Q101 qualified
• Material categorization: For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Applications where a very low forward voltage is required       
PARTS TABLE
PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS
BAT86S BAT86S-TR or BAT86S-TAP Single diode BAT86S Tape and reel/ammopack
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
Peak forward surge current t
Repetitive peak forward current t
Forward continuous current I
Average forward current
PCB mounting, I = 4 mm;
V
RWM
THERMAL CHARACTERISTICS (T
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air I = 4 mm, T
Junction temperature T
Storage temperature range T
ELECTRICAL CHARACTERISTICS (T
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
Reserve current V
Diode capacitance V
= 25 °C, unless otherwise specified)
amb
R
10 ms I
p
1 s I
p
= 25 V, T
= 25 °C, unless otherwise specified)
amb
amb
= 50 °C
amb
= constant R
L
= 25 °C, unless otherwise specified)
= 0.1 mA V
I
F
I
= 1 mA V
F
I
= 10 mA V
F
I
= 30 mA V
F
I
= 100 mA V
F
= 40 V I
R
= 1 V, f = 1 MHz C
R
FSM
FRM
I
FAV
F
50 V
5A
500 mA
200 mA
200 mA
thJA
j
stg
F
F
F
F
F
R
D
320 K/W
125 °C
- 65 to + 150 °C
300 mV
380 mV
450 mV
600 mV
900 mV
A
8pF
Rev. 1.9, 06-May-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1
Document Number: 85514
www.vishay.com
1
10
100
1000
10000
25 50 75 100 125 150
15828
I - Reverse Current (µA)
R
Tj- Junction Temperature (°C)
VR= V
RRM
15829
0 0.5 1.0 1.5
0.1
1
10
100
1000
I - Forward Current (A)
F
VF- Forward Voltage (V)
Tj= 25 °C
Tj= 125 °C
15830
0
1
2
3
4
5
6
7
8
9
10
0.1 1 10 100
f = 1 MHz
V
R
- Reverse Voltage (V)
C - Diode Capacitance (pF)
D
94 9366
Rev. 6 - Date: 19. December 2011 Document no.: SB-V-3906.04-031(4)
26 min. [1.024] 3.9 max. [0.154] 26 min. [1.024]
1.7 [0.067]
1.3 [0.050]
3.1 min. [0.120]
Ø 0.6 max. [0.024]
Ø 0.4 min. [0.015]
BAT86S
Vishay Semiconductors
TYPICAL CHARACTERISTICS (T
500
VR= 50 V
450
400
350
300
250
200
150
R
= 540 K/W
thJA
100
50
R
P- Reverse Power Dissipation (mW)
0
25 50 75 100 125 150
15827
- Junction Temperature (°C)
T
j
Fig. 1 - Max. Reverse Power Dissipation vs.
Junction Temperature
- Limit
P
R
at 100 % V
= 25 °C, unless otherwise specified)
amb
R
- Limit
P
R
at 80 % V
R
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 2 - Reverse Current vs. Junction Temperature
PACKAGE DIMENSIONS in millimeters (inches): DO-35
Rev. 1.9, 06-May-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Fig. 4 - Diode Capacitance vs. Reverse Voltage
2
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 85514
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Disclaimer
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Revision: 02-Oct-12
1
Document Number: 91000
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