Vishay BAT86S Schematics

www.vishay.com

Small Signal Schottky Diode

MECHANICAL DATA

Case: DO-35
Weight: approx. 125 mg
Cathode band color: black
Packaging codes/options:

TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box

BAT86S

Vishay Semiconductors

FEATURES

• Integrated protection ring against static
discharge

• Very low forward voltage

• AEC-Q101 qualified

• Material categorization:
For definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Applications where a very low forward voltage is required








PARTS TABLE

PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS

BAT86S BAT86S-TR or BAT86S-TAP Single diode BAT86S Tape and reel/ammopack

ABSOLUTE MAXIMUM RATINGS (T

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Reverse voltage V

Peak forward surge current t

Repetitive peak forward current t

Forward continuous current I

Average forward current

PCB mounting, I = 4 mm;

V

RWM

THERMAL CHARACTERISTICS (T

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Thermal resistance junction to ambient air I = 4 mm, T

Junction temperature T

Storage temperature range T

ELECTRICAL CHARACTERISTICS (T

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT

Forward voltage

Reserve current V

Diode capacitance V

= 25 °C, unless otherwise specified)

amb

R

 10 ms I

p

 1 s I

p

= 25 V, T

= 25 °C, unless otherwise specified)

amb

amb

= 50 °C

amb

= constant R

L

= 25 °C, unless otherwise specified)

= 0.1 mA V

I

F

I

= 1 mA V

F

I

= 10 mA V

F

I

= 30 mA V

F

I

= 100 mA V

F

= 40 V I

R

= 1 V, f = 1 MHz C

R

FSM

FRM

I

FAV

F

50 V

5A

500 mA

200 mA

200 mA

thJA

j

stg

F

F

F

F

F

R

D

320 K/W

125 °C

- 65 to + 150 °C

300 mV

380 mV

450 mV

600 mV

900 mV

5μA

8pF

Rev. 1.9, 06-May-13

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1

, [e-mail], [e-mail]

Document Number: 85514

www.vishay.com

1

10

100

1000

10000

25 50 75 100 125 150

15828

I - Reverse Current (µA)

R

Tj- Junction Temperature (°C)

VR= V

RRM

15829

0 0.5 1.0 1.5

0.1

1

10

100

1000

I - Forward Current (A)

F

VF- Forward Voltage (V)

Tj= 25 °C

Tj= 125 °C

15830

0

1

2

3

4

5

6

7

8

9

10

0.1 1 10 100

f = 1 MHz

V

R

- Reverse Voltage (V)

C - Diode Capacitance (pF)

D

94 9366

Rev. 6 - Date: 19. December 2011
Document no.: SB-V-3906.04-031(4)

26 min. [1.024] 3.9 max. [0.154] 26 min. [1.024]

1.7 [0.067]

1.3 [0.050]

3.1 min. [0.120]

Ø 0.6 max. [0.024]

Ø 0.4 min. [0.015]

BAT86S

Vishay Semiconductors

TYPICAL CHARACTERISTICS (T

500

VR= 50 V

450

400

350

300

250

200

150

R

= 540 K/W

thJA

100

50

R

P- Reverse Power Dissipation (mW)

0

25 50 75 100 125 150

15827

- Junction Temperature (°C)

T

j

Fig. 1 - Max. Reverse Power Dissipation vs.

Junction Temperature

- Limit

P

R

at 100 % V

= 25 °C, unless otherwise specified)

amb

R

- Limit

P

R

at 80 % V

R

Fig. 3 - Forward Current vs. Forward Voltage

Fig. 2 - Reverse Current vs. Junction Temperature

PACKAGE DIMENSIONS in millimeters (inches): DO-35

Rev. 1.9, 06-May-13

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 4 - Diode Capacitance vs. Reverse Voltage

2

, [e-mail], [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Document Number: 85514