VISHAY BAT 83S VIS Datasheet
VISHAY
94 9367
Small Signal Schottky Barrier Diodes
Features
• Integrated protection ring against static discharge
• Low capacitance
• Low leakage current
• Low forward voltage drop
• Very low switching time
Applications
General purpose and switching Schottky barrier diode
HF-Detector
Protection circuit
BAT81S / 82S / 83S
Vishay Semiconductors
Diode for low currents with a low supply voltage
Small battery charger
Power supplies
DC / DC converter for notebooks
Mechanical Data
Case: DO-35 Glass Case
Weight: max. 130 mg
Packaging Codes/Options:
TR / 10 k per 13 " reel (52 mm tape), 50 k/box
TAP / 10 k per Ammopack (52 mm tape), 50 k/box
Parts Table
Part Type differentiation Ordering code Remarks
BAT81S V
BAT82S V
BAT83S V
= 40 V BAT81S-TAP or BAT81S-TR Ammopack / Tape and Reel
R
= 50 V BAT82S-TAP or BAT82S-TR Ammopack / Tape and Reel
R
= 60 V BAT83S-TAP or BAT83S-TR Ammopack / Tape and Reel
R
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Par t Symbol Val ue Unit
Reverse voltage BAT81S V
BAT82S V
BAT83S V
Forward current I
Peak forward surge current t
Repetitive peak forward current t
≤ 10 ms I
p
≤ 1 s I
p
F
FSM
FRM
R
R
R
40 V
50 V
60 V
30 mA
500 mA
150 mA
Document Number 85512
Rev. 1.5, 31-Mar-04
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1
BAT81S / 82S / 83S
Vishay Semiconductors
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Value Unit
Junction ambient l = 4 mm, T
Junction temperature T
Storage temperature range T
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Reverse current V
Diode capacitance V
= 0.1 mA V
F
= 1 mA V
I
F
= 15 mA V
I
F
= V
R
= 1 V, f = 1 MHz C
R
= constant R
L
Rmax
F
F
F
I
R
D
thJA
stg
VISHAY
320 K/W
j
125 °C
- 65 to + 150 °C
330 mV
410 mV
1V
200 nA
1.6 pF
Typical Characteristics (T
14
12
R = 540 K/W
thJA
8
P
- Limit @ 100 %
6
4
2
0
25 50 75 100 125 150
R
P
- Limit @ 80 %
R
Tj- Junction Temperature ( ° C)
15794
10
R
P - Reverse Power Dissipation ( mW )
V
R
VR=60V
= 25 °C unless otherwise specified)
amb
V
R
Fig. 1 Max. Reverse Power Dissipation vs. Junction Temperature
1000
VR=V
RRM
100
ı
10
1
R
I - Reverse Current ( µ A)
0.1
25 50 75 100 125 150
15795
Tj- Junction Temperature ( ° C)
1000
15796
100
F
0.1
I - Forward Current(A)
0.01
Tj= 150 °C
10
Tj=25°C
1
0 0.5 1 1.5 2.0
VF- Forward Voltage(V)
Fig. 3 Forward Current vs. Forward Voltage
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
D
C - Diode Capacitance ( pF )
0.2
0
0.1 1 10 100
15797
VR- Reverse Voltage(V)
f=1MHz
Fig. 2 Reverse Current vs. Junction Temperature
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2
Fig. 4 Diode Capacitance vs. Reverse Voltage
Document Number 85512
Rev. 1.5, 31-Mar-04
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