VISHAY BAT54WS-V Technical data

Small Signal Schottky Diode

Features

• These diodes feature very low turn-on
voltage and fast switching

• These devices are protected by a PN
junction guard ring against excessive
voltage, such as electrostatic discharges

• Lead (Pb)-free component

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

Mechanical Data

Case: SOD323 Plastic case
Weight: approx. 4.3 mg
Packaging Codes/Options:

GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box

e3

BAT54WS-V

Vishay Semiconductors

20145

Parts Table

Par t Ordering code Type Marking Remarks

BAT54WS-V BAT54WS-V-GS18 or BAT54WS-V-GS08 L4 Tape and Reel

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Val ue Unit

Repetitive peak reverse voltage

= 25 °C I

Forward continuous current

Repetitive peak forward current

Surge forward current

Power dissipation

1)

Valid provided that electrodes are kept at ambient temperature

1)

T

amb

T

= 25 °C I

amb

< 1 s, T

t

p

T

amb

= 25 °C I

amb

= 25 °C P

V

RRM

F

FRM

FSM

tot

30 V

1)

200

1)

300

1)

600

1)

150

mA

mA

mA

mW

Thermal Characteristics

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Val ue Unit

Thermal resistance junction to ambient air

Maximum junction temperature

Storage temperature range

1)

Valid provided that electrodes are kept at ambient temperature

R

thJA

T

j

T

stg

1)

650

125 °C

- 65 to + 150 °C

K/W

Document Number 85667

Rev. 1.5, 14-Nov-06

www.vishay.com

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BAT54WS-V

Vishay Semiconductors

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Parameter Test condition Symbol Min Ty p. Max Unit

Reverse breakdown voltage tested with 100 µA pulses

Leakage current

Forward voltage

2)

2)

Diode capacitance

Reverse recovery time

2)

Pulse test: tp < 300 µs, θ < 2 %

Typical Characteristics

T

= 25 °C, unless otherwise specified

amb

VR = 25 V I

IF = 0.1 mA V

= 1 mA V

I

F

= 10 mA V

I

F

= 30 mA V

I

F

= 100 mA V

I

F

= 1 V, f = 1 MHz C

V

R

= IR = 10 mA; IR = 1 mA; RL = 100 Ω t

I

F

V

(BR)

R

F

F

F

F

F

D

rr

30 V

2µA

240 mV

320 mV

400 mV

500 mV

800 mV

10 pF

5ns

1000

= 125 °CT

j

100

10

1

F

0.1

I - Forward Voltage (mA)

0.01

18867

0 0.4

- 40 °C

25 °C

0.6 1.2 1.4

V

- Forward Current (V)

F

0.8 10.2

Figure 1. Typical Forward Voltage Forward Current at Various

Temperatures

14

12

10

8

6

4

D

2

C - Typical Capacitance (pF)

0

0 4 12 16 20 24 28

18868

8

VR- Reverse Voltage (V)

Figure 2. Typical Capacitance °C vs. Reverse Applied Voltage V

1000

= 125 °CT

j

I - Reverse Current (µA)

18869

R

100

10

1

0.1

0.01

100 °C

75 °C

50 °C

25 C

510152002530

- Reverse Voltage (V)

V

R

Figure 3. Typical Variation of Reverse Current at Various

Temperatures

R

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Document Number 85667

Rev. 1.5, 14-Nov-06