BAT54-V/54A-V/54C-V/54S-V
Small Signal Schottky Diodes, Single & Dual
Features
• These diodes feature very low turn-on
voltage and fast switching
• These devices are protected by a PN
junction guard ring against excessive voltage, such as electrostatic discharges
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
e3
BAT54-V
3
Vishay Semiconductors
BAT54A-V
3
Top View
Mechanical Data
Case: SOT23 Plastic case
Weight: approx. 8.8 mg
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
12
BAT54C-V
3
Top View
12
18034
12
BAT54S-V
3
12
Parts Table
Par t Ordering code Type Marking Remarks
BAT54-V BAT54-V-GS18 or BAT54-V-GS08 L4 Tape and Reel
BAT54A-V BAT54A-V-GS18 or BAT54A-V-GS08 L42 Tape and Reel
BAT54C-V BAT54C-V-GS18 or BAT54C-V-GS08 L43 Tape and Reel
BAT54S-V BAT54S-V-GS18 or BAT54S-V-GS08 L44 Tape and Reel
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Value Unit
Repetitive peak reverse voltage
Forward continuous current
Repetitive peak forward current
t
Surge forward current current
Power dissipation
1)
Device on fiberglass substrate, see layout on next page.
< 1 s I
p
V
RRM
I
FRM
FSM
P
30 V
I
F
tot
1)
200
1)
300
1)
600
230 mW
mA
mA
mA
Document Number 85508
Rev. 1.7, 16-Oct-06
www.vishay.com
1
BAT54-V/54A-V/54C-V/54S-V
Vishay Semiconductors
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Para meter Test condition Symbol Value Unit
Thermal resistance junction to ambiant air
Junction temperature
Storage temperature range
1)
Device on fiberglass substrate, see layout on next page.
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Min Ty p. Max Unit
= 100 µA (pulsed) V
Reverse Breakdown voltage
Leakage current Pulse test t
Forward voltage I
Diode capacitance
Reverse recovery time I
I
R
< 300 µs, δ < 2 % at
p
= 25 V
V
R
= 0.1 mA, tp < 300 µs, δ < 2 % V
F
= 1 mA, tp < 300 µs, δ < 2 % V
I
F
= 10 mA, tp < 300 µs, δ < 2 % V
I
F
= 30 mA, tp < 300 µs, δ < 2 % V
I
F
= 100 mA, tp < 300 µs, δ < 2 % V
I
F
= 1 V, f = 1 MHz C
V
R
= 10 mA to IR = 10 mA,
F
= 1 mA, RL = 100 Ω
i
R
(BR)
I
t
R
thJA
T
j
T
stg
430
1)
K/W
125 °C
- 65 to + 150 °C
30 V
R
F
F
F
F
F
D
rr
2µA
240 mV
320 mV
400 mV
500 mV
800 mV
10 pF
5ns
Layout for R
thJA
test
Thickness:
Fiberglass 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
15 (0.59)
12 (0.47)
0.8 (0.03)
5 (0.2)
7.5 (0.3)
3 (0.12)
1.5 (0.06)
5.1 (0.2)
1 (0.4)
2 (0.8)
1 (0.4)
2 (0.8)
17451
www.vishay.com
2
Document Number 85508
Rev. 1.7, 16-Oct-06