Vishay BAT54, BAT54A, BAT54C, BAT54S Schematic [ru]

BAT54, BAT54A, BAT54C, BAT54S
Top View
Top View
BAT54
BAT54C
BAT54A
BAT54S
1
3
1
3
1
3
1
2
2
2
2
3
www.vishay.com
Vishay Semiconductors
Small Signal Schottky Diodes, Single and Dual
FEATURES
• These diodes feature very low turn-on voltage and fast switching
• These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges
• AEC-Q101 qualified
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.8 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS
BAT54
BAT54A
BAT54C
BAT54S
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage V
Forward continuous current
Repetitive peak forward current
Surge forward current
Repetitive peak forward current P
Note
(1)
Device on fiberglass substrate, see layout on next page
THERMAL CHARACTERISTICS (T
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
Junction temperature T
Storage temperature range T
Operating temperature range T
Rev. 1.9, 25-Feb-13
BAT54-E3-08 or BAT54-E3-18
BAT54-HE3-08 or BAT54-HE3-18
BAT54A-E3-08 or BAT54A-E3-18
BAT54A-HE3-08 or BAT54A-HE3-18
BAT54C-E3-08 or BAT54C-E3-18
BAT54C-HE3-08 or BAT54C-HE3-18
BAT54S-E3-08 or BAT54S-E3-18
BAT54S-HE3-08 or BAT54S-HE3-18
(1)
(1)
(1)
= 25 °C, unless otherwise specified)
amb
tp < 1 s I
= 25 °C, unless otherwise specified)
amb
Device on fiberglass substrate,
see layout on next page
Dual diodes common cathode L43
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Single diode L4
Dual diodes common anode L42
Dual diodes serial L44
RRM
I
F
I
FRM
FSM
tot
R
thJA
j
stg
op
1
30 V
200 mA
300 mA
600 mA
230 mW
430 K/W
125 °C
- 65 to + 150 °C
- 55 to + 125 °C
Tape and reel
Document Number: 85508
www.vishay.com
18868
10
14
12
2
4
0
0 4 12 16 20 24 28
C - Typical Capacitance (pF)
D
VR- Reverse Voltage (V)
6
8
8
BAT54, BAT54A, BAT54C, BAT54S
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (T
= 25 °C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Reserve breakdown voltage I
Leakage current
Pulsed test t
Forward voltage
Diode capacitance V
Reserve recovery time
LAYOUT FOR R
thJA
TEST
= 100 μA (pulsed) V
R
< 300 μs, <2 % at
p
V
= 25 V
R
= 0.1 mA, tp < 300 μs, < 2 % V
I
F
I
= 1 mA, tp < 300 μs, < 2 % V
F
I
= 10 mA, tp < 300 μs, < 2 % V
F
I
= 30 mA, tp < 300 μs, < 2 % V
F
I
= 100 mA, tp < 300 μs, < 2 % V
F
= 1 V, f = 1 MHz C
R
I
= 10 mA to IR = 10 mA,
F
i
= 1 mA, RL = 100
R
(BR)
I
R
t
rr
30 V
A
F
F
F
F
F
D
240 mV
320 mV
400 mV
500 mV
800 mV
10 pF
5ns
Thickness: Fiberglas 15 mm (0.059") Copper leads 0.3 mm (0.012")
7.5 (0.3)
3 (0.12)
15 (0.59)
1 (0.4)
12 (0.47)
0.8 (0.03)
2 (0.8)
1 (0.4)
2 (0.8)
TYPICAL CHARACTERISTICS (T
1000
= 125 °CT
j
100
10
1
F
0.1
I - Forward Current (mA)
0.01
00.4
18867
Fig. 1 - Typical Forward Voltage Forward Current vs.
Various Temperatures
- 40 °C
25 °C
0.6 1.2 1.4
0.8 10.2
V
- Forward Voltage (V)
F
5 (0.2)
1.5 (0.06)
5.1 (0.2)
= 25 °C, unless otherwise specified)
amb
Fig. 2 - Diode Capacitance vs. Reverse Voltage V
17451
R
Rev. 1.9, 25-Feb-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
2
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 85508
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