Vishay BAS40-00, BAS40-04, BAS40-05, BAS40-06 Schematic [ru]
BAS40-00 to BAS40-06
1 2
3
1 2
3
1 2
3
1 2
3
Top View
Top View
BAS40-05 BAS40-06
BAS40-04BAS40-00
www.vishay.com
Vishay Semiconductors
Small Signal Schottky Diodes, Single and Dual
FEATURES
• These diodes feature very low turn-on voltage
and fast switching
• These devices are protected by a PN junction
guardring against excessive voltage, such as
electrostatic discharges
• AEC-Q101 qualified
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.8 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS
BAS40-00
BAS40-04
BAS40-05
BAS40-06
BAS40-00-HE3-08 or BAS40-00-HE3-18
BAS40-04-HE3-08 or BAS40-04-HE3-18
BAS40-05-HE3-08 or BAS40-05-HE3-18
BAS40-06-HE3-08 or BAS40-06-HE3-18
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage V
Forward continuous current
Surge forward current
Power dissipation
Note
(1)
Device on fiberglass substrate, see layout on next page.
(1)
(1)
THERMAL CHARACTERISTICS (T
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
Junction temperature T
Storage temperature range T
Operating temperature range T
Note
(1)
Device on fiberglass substrate, see layout on next page.
Rev. 2.0, 25-Feb-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAS40-00-E3-08 or BAS40-00-E3-18
BAS40-04-E3-08 or BAS40-04-E3-18
BAS40-05-E3-08 or BAS40-05-E3-18
BAS40-06-E3-08 or BAS40-06-E3-18
= 25 °C, unless otherwise specified)
amb
(1)
tp < 1 s I
= 25 °C, unless otherwise specified)
amb
(1)
Single diode 43
Dual diodes serial 44
Dual diodes common cathode 45
Dual diodes common anode 46
= V
R
I
FSM
P
thJA
stg
RWM
F
tot
j
op
= V
R
200 mA
600 mA
200 mW
500 K/W
125 °C
- 65 to + 150 °C
- 55 to + 125 °C
RRM
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Tape and reel
40 V
Document Number: 85701
www.vishay.com
17451
15 (0.59)
12 (0.47)
0.8 (0.03)
5 (0.2)
7.5 (0.3)
3 (0.12)
1 (0.4)
1 (0.4)
2 (0.8)
2 (0.8)
1.5 (0.06)
5.1 (0.2)
Foot print recommendation:
Rev. 8 - Date: 23.Sept.2009
17418
Document no.: 6.541-5014.01-4
0.9 (0.035)
1 (0.039)
0.9 (0.035)
1 (0.039)
1.43 (0.056)
0.45 (0.018)
0.35 (0.014)
2.8 (0.110)
3.1 (0.122)
0.45 (0.018)
0.35 (0.014)
0.45 (0.018)
0.35 (0.014)
0.1 (0.004) max.
2.35 (0.093)
2.6 (0.102)
0.175 (0.007)
0.098 (0.004)
1.15 (0.045)
0.9 (0.035)
1.20 (0.047)
0.95 (0.037) 0.95 (0.037)
2 (0.079)
0.7 (0.028)
0.9 (0.035)
0° to 8°
0.2 (0.008)
0.3 (0.012)
0.5 (0.020)
0.550 ref. (0.022 ref.)
BAS40-00 to BAS40-06
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (T
= 25 °C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Reverse breakdown voltage I
= 10 μA (pulsed) V
R
Leakage current V
Forward voltage I
Forward voltage
Diode capacitance V
Reverse recovery time I
(1)
= 0 V, f = 1 MHz C
R
= IR = 10 mA, iR = 1 mA, RL = 100 t
F
= 30 V I
R
= 1 mA V
F
IF = 40 mA V
(BR)
R
F
F
D
rr
40 V
20 100 nA
380 mV
1000 mV
45pF
5ns
Note
(1)
Pulse test tp < 300 μs
LAYOUT FOR R
thJA
TEST
Thickness:
Fiberglass 1.5 mm (0.059 inches)
Copper leads 0.3 mm (0.012 inches)
PACKAGE DIMENSIONS in millimeters (inches): SOT-23
Rev. 2.0, 25-Feb-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2
Document Number: 85701
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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