VISHAY BAS19-V Technical data
BAS19-V / 20-V / 21-V
Small Signal Switching Diodes, High Voltage
Features
• Silicon Epitaxial Planar Diode
• Fast switching diode in case SOT-23,
especially suited for automatic insertion.
• These diodes are also available in other
case styles including:the SOD-123 case with the
type designations BAV19W-V to BAV21W-V, the
Mini-MELF case with the type designation
BAV101 to BAV103, the DO-35 case with the type
designations BAV19-V to BAV21-V and the SOD323 case with type designation BAV19WS-V to
BAV21WS-V.
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
e3
Vishay Semiconductors
3
12
16923
Mechanical Data
Case: SOT-23 Plastic case
Weight: approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part Type differentiation Ordering code Marking Remarks
BAS19-V V
BAS20-V V
BAS21-V V
= 120 V BAS19-V-GS18 or BAS19-V-GS08 A8 Tape and Reel
RRM
= 200 V BAS20-V-GS18 or BAS20-V-GS08 A81 Tape and Reel
RRM
= 250 V BAS21-V-GS18 or BAS21-V-GS08 A82 Tape and Reel
RRM
Document Number 85540
Rev. 1.5, 22-Jul-05
www.vishay.com
1
BAS19-V / 20-V / 21-V
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Par t Symbol Value Unit
Continuous reverse voltage BAS19-V V
BAS20-V V
BAS21-V V
Repetitive peak reverse voltage BAS19-V V
BAS20-V V
BAS21-V V
Non-repetitive peak forward
current
Non-repetitive peak forward
surge current
Maximum average forward
rectified current
DC forward current T
Repetitive peak forward current I
Power dissipation T
1)
Measured under pulse conditions; Pulse time = Tp ≤ 0.3 ms
2)
Device on fiberglass substrate, see layout on next page
t = 1 µsI
t = 1 s I
(av. over any 20 ms period) I
= 25 °C I
amb
= 25 °C P
amb
R
R
R
RRM
RRM
RRM
FSM
FSM
F(AV)
F
FRM
tot
100 V
150 V
200 V
120 V
200 V
250 V
2.5 A
0.5 A
1)
200
2)
200
625 mA
2)
250
mA
mA
mW
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Para me ter Test condition Symbol Val ue Unit
Thermal resistance junction to ambient air R
Junction temperature T
Storage temperature range T
1)
Device on fiberglass substrate, see layout on next page
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Min Ty p . Max Unit
Forward voltage I
Leakage current V
Dynamic forward resistance I
Diode capacitance V
Reverse recovery time I
= 100 mA V
F
I
= 200 mA V
F
= V
R
Rmax
V
= V
R
= 10 mA r
F
= 0, f = 1 MHz C
R
= IR = 30 mA, RL = 100 Ω,
F
I
= 3 mA
rr
, Tj = 150 °C I
Rmax
F
F
I
R
R
f
tot
t
rr
thJA
S
1)
430
j
150 °C
°C
- 65 to + 150 °C
1.0 V
1.25 V
100 nA
100 µA
5 Ω
5pF
50 ns
www.vishay.com
2
Document Number 85540
Rev. 1.5, 22-Jul-05
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