VISHAY BAS19-V Technical data

BAS19-V / 20-V / 21-V
Small Signal Switching Diodes, High Voltage
Features
• Silicon Epitaxial Planar Diode
• Fast switching diode in case SOT-23, especially suited for automatic insertion.
• These diodes are also available in other case styles including:the SOD-123 case with the type designations BAV19W-V to BAV21W-V, the Mini-MELF case with the type designation BAV101 to BAV103, the DO-35 case with the type designations BAV19-V to BAV21-V and the SOD­323 case with type designation BAV19WS-V to BAV21WS-V.
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
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Vishay Semiconductors
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12
Mechanical Data
Case: SOT-23 Plastic case Weight: approx. 8.8 mg Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part Type differentiation Ordering code Marking Remarks
BAS19-V V
BAS20-V V
BAS21-V V
= 120 V BAS19-V-GS18 or BAS19-V-GS08 A8 Tape and Reel
RRM
= 200 V BAS20-V-GS18 or BAS20-V-GS08 A81 Tape and Reel
RRM
= 250 V BAS21-V-GS18 or BAS21-V-GS08 A82 Tape and Reel
RRM
Document Number 85540
Rev. 1.5, 22-Jul-05
www.vishay.com
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BAS19-V / 20-V / 21-V
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Par t Symbol Value Unit
Continuous reverse voltage BAS19-V V
BAS20-V V
BAS21-V V
Repetitive peak reverse voltage BAS19-V V
BAS20-V V
BAS21-V V
Non-repetitive peak forward current
Non-repetitive peak forward surge current
Maximum average forward rectified current
DC forward current T
Repetitive peak forward current I
Power dissipation T
1)
Measured under pulse conditions; Pulse time = Tp 0.3 ms
2)
Device on fiberglass substrate, see layout on next page
t = 1 µsI
t = 1 s I
(av. over any 20 ms period) I
= 25 °C I
amb
= 25 °C P
amb
R
R
R
RRM
RRM
RRM
FSM
FSM
F(AV)
F
FRM
tot
100 V
150 V
200 V
120 V
200 V
250 V
2.5 A
0.5 A
1)
200
2)
200
625 mA
2)
250
mA
mA
mW
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Para me ter Test condition Symbol Val ue Unit
Thermal resistance junction to ambient air R
Junction temperature T
Storage temperature range T
1)
Device on fiberglass substrate, see layout on next page
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Min Ty p . Max Unit
Forward voltage I
Leakage current V
Dynamic forward resistance I
Diode capacitance V
Reverse recovery time I
= 100 mA V
F
I
= 200 mA V
F
= V
R
Rmax
V
= V
R
= 10 mA r
F
= 0, f = 1 MHz C
R
= IR = 30 mA, RL = 100 Ω,
F
I
= 3 mA
rr
, Tj = 150 °C I
Rmax
F
F
I
R
R
f
tot
t
rr
thJA
S
1)
430
j
150 °C
°C
- 65 to + 150 °C
1.0 V
1.25 V
100 nA
100 µA
5
5pF
50 ns
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Document Number 85540
Rev. 1.5, 22-Jul-05
Test Circuit and Waveforms
Ω
BAS19-V / 20-V / 21-V
Vishay Semiconductors
Test circuit
Input Signal - total pulse duration tp(tot) = 2 µs
-duty factor δ = 0.0025
- rise time of reverse pulse t
-reverse pulse duration t
Oscilloscope - rise time t
= 0.6ns
r
= 100ns
p
= 0.35ns
r
- cicuit capitance* C < 1pF
*C = oscilloscope input capactitance + parasitic capacitance
18098
Layout for R
thJA
test
Thickness: Fiberglass 1.5 mm (0.059 in.) Copper leads 0.3 mm (0.012 in.)
12 (0.47)
15 (0.59)
0.8 (0.03)
Input signal
Output signal
7.5 (0.3)
3 (0.12)
1 (0.4)
Waveforms;IR=3mA
2 (0.8)
1 (0.4)
2 (0.8)
Document Number 85540
Rev. 1.5, 22-Jul-05
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
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BAS19-V / 20-V / 21-V
Vishay Semiconductors
Package Dimensions in mm (Inches)
0.1 (.004) max.
0.4 (.016)0.4 (.016)
3.1 (.122)
2.8 (.110)
0.4 (.016)
1.20(.047)
1.43 (.056)
0.175 (.007)
0.098 (.005)
2.0 (0.079)
2.6 (.102)
2.35 (.092)
Mounting Pad Layout
0.52 (0.020)
0.9 (0.035)
1.15 (.045)
0.95 (.037)
ISO Method E
0.95 (.037)0.95 (.037)
0.95 (0.037)0.95 (0.037)
17418
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Document Number 85540
Rev. 1.5, 22-Jul-05
BAS19-V / 20-V / 21-V
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85540
Rev. 1.5, 22-Jul-05
www.vishay.com
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 www.vishay.com Revision: 08-Apr-05 1
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