VISHAY BAS16-V Technical data
Small Signal Fast Switching Diode
Features
• Silicon Epitaxial Planar Diode
• Ultra fast switching speed
• Surface mount package ideally suited
for automatic insertion
• High conductance
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
Case: SOT23 Plastic case
Weight: approx. 8.0 mg
Polarity: cathode band
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
e3
BAS16-V
Vishay Semiconductors
3
12
16923
Parts Table
Par t Ordering code Marking Remarks
BAS16-V BAS16-V-GS18 or BAS16-V_GS08 A6 Tape and Reel
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Non repetitive peak reverse
voltage
Repetitive peak reverse voltage
= Working peak reverse voltage
= DC Blocking voltage
Peak forward surge current t
Average forward current half wave rectification with
Forward current on ceramic substrate
Power dissipation on ceramic substrate
= 1 s I
p
t
=1 µs I
p
resistive load and f ≥ 50 MHz, on
ceramic substrate
8 mm x10 mm x 0.7 mm
8 mm x 10 mm x 0.7 mm
8 mm x 10 mm x 0.7 mm
V
RRM
= V
V
FSM
FSM
I
FAV
P
RM
RWM
I
F
tot
= V
R
100 V
75 V
1A
2A
150 mA
300 mA
350 mW
Document Number 85539
Rev. 1.5, 09-Mar-06
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BAS16-V
Vishay Semiconductors
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Value Unit
Junction ambient on ceramic substrate
8 mm x 10 mm x 0.7 mm
Junction and storage
temperature range
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Reverse current V
Diode capacitance V
Reverse recovery time I
= 1 mA V
F
I
= 10 mA V
F
I
= 50 mA V
F
= 150 mA V
I
F
= 75 V I
R
V
= 75 V, Tj = 150 °C I
R
V
= 25 V, Tj = 150 °C I
R
= 0, f = 1 MHz C
R
= 10 mA to IR = 1 mA,
F
= 6 V, RL = 100 Ω
V
R
R
thJA
= T
T
j
stg
F
F
F
F
R
R
R
D
t
rr
357 K/W
- 55 to + 150 °C
715 mV
855 mV
1V
1.25 V
1µA
50 µA
30 µA
4pF
6ns
Typical Characteristics
T
= 25 °C, unless otherwise specified
amb
1000
100
= 100 °CT
j
10
1
0.1
F
I - Forward Current (mA)
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
14356
Figure 1. Forward Current vs. Forward Voltage
- Forward Voltage (V)
V
F
25 °C
10000
VR=20V
1000
100
10
R
I–Reverse Current (nA)
1
0 25 50 75 100 125 150 175 200
14357
T
–Junction Temperature (°C)
j
Figure 2. Reverse Current vs. Junction Temperature
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2
Document Number 85539
Rev. 1.5, 09-Mar-06
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