VISHAY BA282, BA283 Technical data
VISHAY
94 9367
Band Switching Diodes
Features
• Silicon Planar Diodes
• Low differential forward resistance
• Low diode capacitance
• High reverse impedance
Applications
Band switching in VHF-tuners
Mechanical Data
Case: DO-35 Glass Case
Weight: max. 130 mg
Packaging Codes/Options:
TR / 10 k per 13 " reel (52 mm tape), 50 k/box
TAP / 10 k per Ammopack (52 mm tape), 50 k/box
BA282/BA283
Vishay Semiconductors
Parts Table
Part Type differentiation Ordering code Remarks
BA282 V
BA283 V
= 35 V, rf @ IF 3 mA = max 0.7 Ω BA282-TR or BA282-TAP Tape and Reel / Ammopack
R
= 35 V, rf @ IF3 mA = max 1.2 Ω BA283-TR or BA283-TAP Tape and Reel / Ammopack
R
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Value Unit
Reverse voltage V
Forward current I
R
F
35 V
100 mA
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Value Unit
Junction ambient l = 4 mm, T
Junction temperature T
Storage temperature range T
= constant R
L
thJA
j
stg
350 K/W
150 °C
-55 to +150 °C
Document Number 85526
Rev. 1.5, 12-Feb-04
www.vishay.com
1
BA282/BA283
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Part Symbol Min Ty p. Max Unit
Forward voltage I
Reverse current V
Diode capacitance f = 100 MHz, V
Differential forward resistance f = 200 MHz, I
Reverse impedance f = 100 MHz, V
= 100 mA V
F
= 20 V I
R
f = 100 MHz, V
f = 200 MHz, I
= 1 V C
R
= 3 V BA282 C
R
BA283 C
= 3 mA BA282 r
F
BA283 r
= 10 mA BA282 r
F
BA283 r
= 1 V z
R
VISHAY
F
R
D
D
D
f
f
f
f
r
100 kΩ
1V
50 nA
1.5 pF
1.25 pF
1.2 pF
0.7 Ω
1.2 Ω
0.5 Ω
0.9 Ω
Typical Characteristics (T
100
f=200MHz
T
j
10
ı
BA 283
1
f
0.1
r - Differential Forward Resistance ( Ω )
0.1 1 10
94 9072
IF- Forward Current ( mA )
= 25 °C unless otherwise specified)
amb
=25°C
BA 282
100
Figure 1. Differential Forward Resistance vs. Forward Current
Package Dimensions in mm (Inches)
technical drawings
according to DIN
specifications
3.0
2.5
2.0
1.5
1.0
D
C - Diode Capacitance ( pF )
0.5
0
94 9073
Figure 2. Diode Capacitance vs. Reverse Voltage
Cathode Identification
f = 200 MHz
T
=25° C
j
BA 282
BA 283
0.1 1 10
V - Reverse Voltage ( V )
R
∅ 0.55 (0.02) max.
100
94 9366
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
www.vishay.com
2
∅ 2.0 (0.08) max.
3.9 (0.15) max.26 (1.02) min.
26 (1.02) min.
Document Number 85526
Rev. 1.5, 12-Feb-04
Loading...