VISHAY
94 9367
Band Switching Diodes
Features
• Silicon Planar Diodes
• Low differential forward resistance
• Low diode capacitance
• High reverse impedance
Applications
Band switching in VHF-tuners
Mechanical Data
Case: DO-35 Glass Case
Weight: max. 130 mg
Packaging Codes/Options:
TR / 10 k per 13 " reel (52 mm tape), 50 k/box
TAP / 10 k per Ammopack (52 mm tape), 50 k/box
BA282/BA283
Vishay Semiconductors
Parts Table
Part Type differentiation Ordering code Remarks
BA282 V
BA283 V
= 35 V, rf @ IF 3 mA = max 0.7 Ω BA282-TR or BA282-TAP Tape and Reel / Ammopack
R
= 35 V, rf @ IF3 mA = max 1.2 Ω BA283-TR or BA283-TAP Tape and Reel / Ammopack
R
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Value Unit
Reverse voltage V
Forward current I
R
F
35 V
100 mA
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Value Unit
Junction ambient l = 4 mm, T
Junction temperature T
Storage temperature range T
= constant R
L
thJA
j
stg
350 K/W
150 °C
-55 to +150 °C
Document Number 85526
Rev. 1.5, 12-Feb-04
www.vishay.com
1
BA282/BA283
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Part Symbol Min Ty p. Max Unit
Forward voltage I
Reverse current V
Diode capacitance f = 100 MHz, V
Differential forward resistance f = 200 MHz, I
Reverse impedance f = 100 MHz, V
= 100 mA V
F
= 20 V I
R
f = 100 MHz, V
f = 200 MHz, I
= 1 V C
R
= 3 V BA282 C
R
BA283 C
= 3 mA BA282 r
F
BA283 r
= 10 mA BA282 r
F
BA283 r
= 1 V z
R
VISHAY
F
R
D
D
D
f
f
f
f
r
100 kΩ
1V
50 nA
1.5 pF
1.25 pF
1.2 pF
0.7 Ω
1.2 Ω
0.5 Ω
0.9 Ω
Typical Characteristics (T
100
f=200MHz
T
j
10
ı
BA 283
1
f
0.1
r - Differential Forward Resistance ( Ω )
0.1 1 10
94 9072
IF- Forward Current ( mA )
= 25 °C unless otherwise specified)
amb
=25°C
BA 282
100
Figure 1. Differential Forward Resistance vs. Forward Current
Package Dimensions in mm (Inches)
technical drawings
according to DIN
specifications
3.0
2.5
2.0
1.5
1.0
D
C - Diode Capacitance ( pF )
0.5
0
94 9073
Figure 2. Diode Capacitance vs. Reverse Voltage
Cathode Identification
f = 200 MHz
T
=25° C
j
BA 282
BA 283
0.1 1 10
V - Reverse Voltage ( V )
R
∅ 0.55 (0.02) max.
100
94 9366
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
www.vishay.com
2
∅ 2.0 (0.08) max.
3.9 (0.15) max.26 (1.02) min.
26 (1.02) min.
Document Number 85526
Rev. 1.5, 12-Feb-04
VISHAY
BA282/BA283
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85526
Rev. 1.5, 12-Feb-04
www.vishay.com
3
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