VISHAY B40C1500G VIS Datasheet

Page 1
B40C1500G thru B380C1500G
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• Ideal for printed circuit boards
+
~
+
~
Case Style WOG
~
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
max. 125 °C
J
65 V to 600 V
1.5 A
50 A
10 µA
1.0 V
• High case dielectric strength
~
• High surge current capability
• Typical I
less than 0.1 µA
R
• Solder dip 260 °C, 40 s
e4
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave rectification for power supply, adapter, charger, lighting ballaster on consumers and home appliances applications.
MECHANICAL DATA
Case: WOG
Epoxy meets UL 94V-0 flammability rating
Terminals: Silver plated leads, solderable per J-STD-002 and JESD22-B102 E4 suffix for consumer grade
Polarity: As marked on body
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL
Maximum repetitive peak reverse voltage V
Maximum RMS input voltage R- and C-load V
Maximum DC blocking voltage V
Maximum peak working voltage V
Maximum non-repetitive peak voltage V
Maximum repetitive peak forward surge current I
Maximum average forward output current for free air operation at T
Peak forward surge current single sine-wave on rated load I
Rating for fusing at T
Minimum series resistor C-load at V
Maximum load capacitance
Operating junction temperature range T
Storage temperature range T
Document Number: 88501 Revision: 15-Apr-08
= 45 °C
A
= 125 °C (t < 100 ms) I2t 12.5 A2s
J
RMS
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
R- and L-load C-load
= ± 10 % Rt 1.0 2.0 4.0 8.0 12 Ω
+ 50 %
- 10 %
RRM
RMS
DC
RWM
RSM
FRM
I
F(AV)
FSM
C
STG
L
J
B40
C1500G
65 125 200 400 600 V
40 80 125 250 380 V
65 125 200 400 600 V
90 180 300 600 800 V
100 200 350 600 1000 V
10 A
50 A
5000 2500 1000 500 200 µF
- 40 to + 150 °C
B80
C1500G
B125
C1500G
1.6
1.5
- 40 to + 125 °C
B250
C1500G
B380
C1500G
UNIT
A
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1
Page 2
B40C1500G thru B380C1500G
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage drop per diode
Maximum reverse current at rated repetitive peak voltage per diode
TEST
CONDITIONS
1.5 A V
T
= 25 °C IR 10 µA
A
SYMBOL
F
B40
C1500G
1.0 V
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL
Typical thermal resistance
(1)
R
θJA
R
θJL
Note:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. at 0.375" (9.5 mm) lead lengths with 0.22 x 0.22"
(5.5 x 5.5 mm) copper pads
B40
C1500G
B80
C1500G
B80
C1500G
B125
C1500G
B125
C1500G
36 11
B250
C1500G
B250
C1500G
B380
C1500G
B380
C1500G
UNIT
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
B380C1500G-E4/51 1.12 51 100 Plastic bag
RATINGS AND CHARACTERISTICS CURVES
= 25 °C unless otherwise noted)
(T
A
1.6
1.4
1.2
1.0
0.8
0.6
0.375" (9.5 mm)
Current Average (A)
0.4
0.2
Bridge Output Full Wave Rectified
0
Copper Pads
0.22 x 0.22" (5.5 x 5.5 mm)
20 40 60 80 100 120 140
Ambient Temperature (°C)
50 to 60 Hz Resistive or Inductive Load
P.C.B.
Capacitive Load < 500 µF 500 - 5000 µF
Figure 1. Derating Curves Output Rectified Current for
B40C1500G...B125C1500G
1.6
1.4
1.2
Capacitive
Load
1.0
0.8
0.6
0.375" (9.5 mm)
Current Average (A)
0.4
0.2
Bridge Output Full Wave Rectified
0
Copper Pads
0.22 x 0.22" (5.5 x 5.5 mm)
20 40 60 80 100 120 140
Ambient Temperature (°C)
50 to 60 Hz Resistive or Inductive Load
P.C.B.
0 - 10 µF 10 - 100 µF > 100 µF
Figure 2. Derating Curves Output Rectified Current for
B250C1500G...B380C1500G
www.vishay.com For technical questions within your region, please contact one of the following: 2
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88501
Revision: 15-Apr-08
Page 3
B40C1500G thru B380C1500G
Vishay General Semiconductor
50
TA = 25 °C
40
30
20
10
Single Sine-Wave
Peak Fo rward Surge Current (A)
0
1 10010
Number of Cycles at 60 Hz
Figure 3. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
100
TJ = 25 °C Pulse Width = 300 µs 1 % Duty Cycle
10
1
10
TJ = 100 °C
1
0.1
Instantaneous Reverse Current (µA)
0.01
TJ = 25 °C
806040200 100
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Reverse Characteristics Per Diode
100
10
TJ = 25 °C f = 1.0 MHz
= 50 mVp-p
V
sig
0.1
Instantaneous Forward Current (A)
0.01
0.4 0.6 0.8 1.0 1.2 1.4
Instantaneous Forward Voltage (V)
Figure 4. Typical Forward Characteristics Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style WOG
0.388 (9.86)
0.348 (8.84)
0.220 (5.6)
0.160 (4.1)
0.032 (0.81)
0.028 (0.71)
0.348 (8.84)
0.308 (7.82)
Junction Capacitance (pF)
1
0.1 101 100
Reverse Voltage (V)
Figure 6. Typical Junction Capacitance Per Diode
1.0 (25.4) MIN.
0.060 (1.52)
0.020 (0.51)
0.220 (5.6)
0.180 (4.6)
Document Number: 88501 Revision: 15-Apr-08
0.220 (5.6)
0.180 (4.6)
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
www.vishay.com
3
Page 4
Legal Disclaimer Notice
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Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000
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