VISHAY 8ETH06 VIS Datasheet
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2L TO-220AC
1
2
3
Anode
1
3
Cathode
Base
cathode
2
VS-8ETH06-M3
Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
at I
F
F
t
typ. 18 ns
rr
T
max. 175 °C
J
Package 2L TO-220AC
Circuit configuration Single
8 A
600 V
1.3 V
®
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Designed and qualified according to JEDEC
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
®
-JESD 47
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Repetitive peak reverse voltage V
Average rectified forward current I
Repetitive peak forward current I
Operating junction and storage temperatures T
F(AV)
FSM
, T
J
RRM
TC = 144 °C 8
TJ = 25 °C 90
FM
Stg
600 V
16
-65 to +175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
Revision: 23-Nov-17
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V
,
BR
V
IR = 100 μA 600 - -
R
IF = 8 A - 2.0 2.4
F
I
= 8 A, TJ = 150 °C - 1.3 1.8
F
VR = VR rated - 0.3 50
R
T
S
= 150 °C, VR = VR rated - 55 500
T
J
VR = 600 V - 17 - pF
Measured lead to lead 5 mm from package body - 8.0 - nH
1
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Document Number: 96177
ANon-repetitive peak surge current I
V
μA
VS-8ETH06-M3
1
10
TJ = 175 °C
T
J
= 150 °C
T
J
= 25 °C
01
VF - Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
23
4
0.1
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DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - 18 22
I
= 8 A, dIF/dt = 100 A/μs, VR = 30 V - 20 25
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
rr
rr
RRM
rr
F
T
= 25 °C
J
= 125 °C - 40 -
T
J
TJ = 25 °C - 2.4 -
= 125 °C - 4.8 -
T
J
TJ = 25 °C - 25 -
= 125 °C - 120 -
T
J
TJ = 125 °C
I
= 8 A
F
dI
/dt = 200 A/μs
F
V
= 390 V
R
= 8 A
I
F
dI
/dt = 600 A/μs
F
V
= 390 V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
Thermal resistance, junction-to-case R
Thermal resistance, junction-to-ambient
per leg
Thermal resistance, case-to-heatsink R
Weight
Mounting torque
Marking device Case style 2L TO-220AC 8ETH06
T
, T
J
Stg
-1.42°C/W
thJC
R
thJA
thCS
Typical socket mount - - 70
Mounting surface, flat, smooth, and
greased
Vishay Semiconductors
-25-
-33-ns
-12- A
- 220 - nC
-65 - 175 °C
-0.5-
-2.0- g
-0.07- oz.
6.0
(5.0)
-
12
(10)
ns
A
nC
kgf · cm
(lbf · in)
1000
100
10
1
0.1
- Reverse Current (µA)
R
0.01
I
0.001
0 200 400
100
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 25 °C
300
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 23-Nov-17
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 96177
600500
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100
1000
0 200 400 500 600
10
VR - Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
300100
TJ = 25 °C
10
VS-8ETH06-M3
Vishay Semiconductors
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
0.1
- Thermal Impedance (°C/W)
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1
Single pulse
(thermal resistance)
Fig. 4 - Maximum Thermal Impedance Z
180
170
160
150
140
130
Allowable Case Temperature (°C)
See note (1)
120
02 6 1012
I
F(AV)
Square wave (D = 0.50)
applied
Rated V
R
48
- Average Forward Current (A)
DC
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
t1 - Rectangular Pulse Duration (s)
Characteristics
thJC
20
18
16
14
12
10
8
6
4
Average Power Loss (W)
2
0
02 6 1012
Fig. 6 - Forward Power Loss Characteristics
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
DC
48
I
- Average Forward Current (A)
F(AV)
1/t2
thJC
.
+ T
C
RMS limit
.
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
Note
(1)
Formula used: TC = TJ - (Pd + Pd
Pd = forward power loss = I
Pd
= inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated V
REV
Revision: 23-Nov-17
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
) x R
x VFM at (I
F(AV)
REV
;
thJC
/D) (see fig. 5);
F(AV)
R
3
Document Number: 96177
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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