New Generation 3 D-61 Package, 2 x 40 A
Base
common
cathode
12
Anode
PRODUCT SUMMARY
I
F(AV)
V
R
I
RM
Common
1
cathode
D-61-8
Schottky Rectifier
3
Anode
2
2 x 40 A
15 V
1000 mA at 100 °C
85CNQ015APbF
Vishay High Power Products
FEATURES
• 125 °C TJ operation (VR < 5 V)
• Center tap module
• Optimized for OR-ing applications
• Ultra low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• New fully transfer-mold low profile, small footprint, high
current package
• Through-hole versions are currently available for use in
lead (Pb)-free applications (“PbF” suffix)
• Lead (Pb)-free
• Designed and qualified for industrial level
DESCRIPTION
The center tap Schottky rectifier module has been optimized
for ultra low forward voltage drop specifically for the OR-ing
of parallel power supplies. The proprietary barrier technology
allows for reliable operation up to 125 °C junction
temperature. Typical applications are in parallel switching
power supplies, converters, reverse battery protection, and
redundant power subsystems.
Available
RoHS*
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Rectangular waveform 80 A
15 V
tp = 5 µs sine 5200 A
40 Apk, TJ = 75 °C (per leg) 0.32 V
Range - 55 to 125 °C
VOLTAGE RATINGS
PARAMETER SYMBOL 85CNQ015APbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
15
25
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg E
Repetitive avalanche current per leg I
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94260 For technical questions, contact: diodes-tech@vishay.com
Revision: 13-Aug-08 1
I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 78 °C, rectangular waveform 80
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 850
TJ = 25 °C, IAS = 2 A, L = 4.5 mH 9 mJ
AS
Current decaying linearly to zero in 1 µs
Frequency limited by T
maximum VA = 3 x VR typical
J
Following any rated
load condition and with
rated V
RRM
applied
5200
2A
www.vishay.com
A
85CNQ015APbF
Vishay High Power Products
Schottky Rectifier
New Generation 3
D-61 Package, 2 x 40 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
40 A
Maximum forward voltage drop per leg
See fig. 1
V
FM
80 A 0.45
(1)
40 A
80 A 0.42
TJ = 25 °C
= 100 °C 1000
T
Maximum reverse leakage current per leg
See fig. 2
I
RM
Maximum junction capacitance per leg C
Typical series inductance per leg L
(1)
T
S
J
= 100 °C
T
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 3600 pF
Measured lead to lead 5 mm from package body 5.5 nH
Maximum voltage rate of change dV/dt Rated V
R
T
= 25 °C
J
= 75 °C
T
J
V
= Rated V
R
= 12 V 890
V
R
= 5 V 540
V
R
R
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
per leg
per package DC operation 0.42
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum 40 (35)
maximum 58 (50)
Marking device Case style D-61 85CNQ015A
T
, T
J
Stg
R
thJC
R
thCS
DC operation See fig. 4 0.85
Mounting surface, smooth and greased
Device flatness < 5 mils
0.36
0.32
20
10 000 V/µs
- 55 to 125 °C
0.30
7.8 g
0.28 oz.
kgf · cm
(lbf · in)
V
mA
°C/W
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94260
2 Revision: 13-Aug-08