TO-2 47AC
PRODUCT SUMMARY
VF at 40 A < 1.2 V
t
rr
V
RRM
Anode
1
80EPF..PbF Soft Recovery Series
Fast Soft Recovery
Rectifier Diode, 80 A
FEATURES/DESCRIPTION
Bas e
common
ca thode
2, 4
Anode
3
90 ns
1000/1200 V
The 80EPF..PbF fast soft recovery rectifier
series has been optimized for combined short
reverse recovery time and low forward voltage
drop
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
This product series has been designed and qualified for
industrial level and lead (Pb)-free.
APPLICATIONS
• Output rectification and freewheeling in inverters,
choppers and converters
• Input rectifications where severe restrictions on conducted
EMI should be met
Vishay High Power Products
Pb-free
Available
.
RoHS*
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL TEST CONDITIONS VALUES UNITS
V
RRM
I
F(AV)
I
FSM
t
rr
V
F
T
J
Sinusoidal waveform 80
1 A, - 100 A/µs 90 ns
40 A, TJ = 25 °C 1.2 V
1000/1200 V
1100
- 40 to 150 °C
A
VOLTAGE RATINGS
V
, MAXIMUM PEAK
PART NUMBER
80EPF10PbF 1000 1100
80EPF12PbF 1200 13 00
RRM
REVERSE VOLTAGE
V
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
12
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
√ t for fusing I 2√ t t = 0.1 to 10 ms, no voltage reapplied 70 000 A 2√ s
F(AV)
I
FSM
TC = 92 °C, 180° conduction half sine wave 80
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 1250
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 7000
applied 1100
RRM
applied 5000
RRM
A
2
A
s
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94107 For technical questions, contact: diodes-tech@vishay.com
Revision: 05-Jun-08 1
www.vishay.com
80EPF..PbF Soft Recovery Series
Vishay High Power Products
Fast Soft Recovery
Rectifier Diode, 80 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
Forward slope resistance r
Threshold voltage V
Maximum reverse leakage current I
F(TO)
RM
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Reverse recovery time t
Reverse recovery current I
rr
rr
Reverse recovery charge Q
Snap factor S 0.5
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style TO-247AC (JEDEC)
T
, T
J
R
thJC
R
thJA
R
thCS
80 A, TJ = 25 °C 1.35V
t
rr
Stg
TJ = 150 °C
TJ = 25 °C
T
= 150 °C 12
J
IF at 80 Apk
25 A/µs
25 °C
V
= Rated V
R
RRM
480 ns
7.1 A
2.1 µC
4.03 mΩ
0.87 V
0.1
I
FM
t
rr
dir
dt
- 40 to 150 °C
DC operation 0.35
40
Mounting surface, smooth and greased 0.2
6g
0.21 oz.
80EPF10
80EPF12
I
RM(REC)
kgf · cm
(lbf · in)
mA
Q
°C/W
t
rr
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94107
2 Revision: 05-Jun-08
80EPF..PbF Soft Recovery Series
150
140
130
120
110
100
Temperature (°C)
Maximum Allowable Case
90
80
0
150
140
130
120
110
100
Temperature (°C)
Maximum Allowable Case
90
80
80EPF.. Series
(DC) = 0.35 °C/W
R
thJC
Conduction angle
60°
30°
10 40
30
20
90°
120°
50 60 70 80 90
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
80EPF.. Series
(DC) = 0.35 °C/W
R
thJC
Conduction period
60°
30°
20 40 60 80 100 120 140
0
90°
120°
180°
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Fast Soft Recovery
Rectifier Diode, 80 A
Ø
180°
Ø
DC
140
120
100
80
60
Power Loss (W)
40
Maximum Average Forward
20
1200
1100
1000
900
800
700
600
Forward Current (A)
Peak Half Sine Wave
500
400
300
Fig. 5 - Maximum Non-Repetitive Surge Current
Vishay High Power Products
180°
120°
90°
60°
30°
RMS limit
Ø
Conduction angle
80EPF.. Series
= 150 °C
T
J
0
0
Fig. 4 - Forward Power Loss Characteristics
1 10 100
Number of Equal Amplitude Half Cycle
20 30 50 70 90 10 40 60 80
Average Forward Current (A)
At any rated load condition and with
rated V
80EPF.. Series
applied following surge.
RRM
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Current Pulses (N)
200
175
150
125
100
75
Power Loss (W)
50
Maximum Average Forward
25
DC
180°
120°
90°
60°
30°
RMS limit
Ø
Conduction period
80EPF.. Series
= 150 °C
T
J
0
0
20
60 80 100 120 140
40
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
1300
1200
1100
1000
900
800
700
600
Forward Current (A)
Peak Half Sine Wave
500
400
300
0.01 0.1 1
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated V
80EPF.. Series
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
RRM
reapplied
Document Number: 94107 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 05-Jun-08 3
80EPF..PbF Soft Recovery Series
Vishay High Power Products
1000
100
10
Instantaneous Forward Current (A)
1
800
80EPF.. Series
= 25 °C
T
J
IFM = 10 A
- Maximum Reverse
rr
t
700
600
Recovery Time (ns)
500
400
300
200
100
0
0 40 80 120 160 200
IFM = 80 A
IFM = 20 A
IFM = 1 A
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, T
Fast Soft Recovery
Rectifier Diode, 80 A
TJ = 25 °C
= 150 °C
T
J
80EPF.. Series
0.5 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
12 000
10 000
8000
6000
IFM = 40 A
= 25 °C
J
4000
- Maximum Reverse
rr
Recovery Charge (nC)
Q
2000
0
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, T
80EPF.. Series
= 25 °C
T
J
0 40 80 120 160 200
IFM = 80 A
IFM = 1 A
IFM = 40 A
IFM = 20 A
IFM = 10 A
= 25 °C
J
1800
1600
1400
1200
1000
800
600
- Maximum Reverse
Recovery Time (ns)
400
rr
t
200
0
0 40 80 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, T
80EPF.. Series
= 150 °C
T
J
IFM = 80 A
= 40 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 1 A
I
FM
= 150 °C
J
25 000
80EPF.. Series
= 150 °C
T
J
0
0 40 80 120 160 200
- Maximum Reverse
rr
Q
20 000
15 000
10 000
Recovery Charge (nC)
5000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, T
IFM = 80 A
IFM = 40 A
IFM = 20 A
IFM = 10 A
IFM = 1 A
= 150 °C
J
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94107
4 Revision: 05-Jun-08
80EPF..PbF Soft Recovery Series
Fast Soft Recovery
Vishay High Power Products
Rectifier Diode, 80 A
45
IFM = 80 A
IFM = 40 A
IFM = 20 A
IFM = 10 A
IFM = 1 A
- Maximum Reverse
Recovery Current (A)
rr
I
80EPF.. Series
40
= 25 °C
T
J
35
30
25
20
15
10
5
0
0 40 80 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
1
60
80EPF.. Series
= 150 °C
T
50
J
40
30
20
- Maximum Reverse
Recovery Current (A)
rr
I
10
0
0 40 80 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
IFM = 80 A
IFM = 40 A
IFM = 20 A
IFM = 10 A
IFM = 1 A
0.1
0.01
0.001
- Transient Thermal Impedance (°C/W)
thJC
Z
Single pulse
Fig. 14 - Thermal Impedance Z
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Square Wave Pulse Duration (s)
Characteristics
thJC
Steady state value
(DC operation)
80EPF.. Series
10 0.0001 0.001 0.01 0.1 1
Document Number: 94107 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 05-Jun-08 5
80EPF..PbF Soft Recovery Series
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
80 E P F 12 PbF
1
2
3
4 - Type of silicon:
5 - Voltage code x 100 = V
6
Fast Soft Recovery
Rectifier Diode, 80 A
5 13 24
- Current rating (80 = 80 A)
- Circuit configuration:
E = Single diode
- Package:
P = TO-247AC
F = Fast diode
RRM
- None = Standard production
PbF = Lead (Pb)-free
6
10 = 1000 V
12 = 1200 V
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95223
Part marking information http://www.vishay.com/doc?95226
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
6 Revision: 05-Jun-08
Document Number: 94107
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
®
, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN
®
Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1