Vishay 80EBU04 User Manual

Vishay High Power Products

Ultrafast Soft Recovery Diode,

80 A FRED PT

Cathode Anode

FEATURES

• Ultrafast recovery

• 175 °C operating junction temperature

• Screw mounting only

• Lead (Pb)-free plating

• Designed and qualified for industrial level

TM

80EBU04

RoHS

COMPLIANT

PowerTab

PRODUCT SUMMARY

t

(typical) 50 ns

rr

I

F(AV)

TM

• Reduced RFI and EMI

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION/APPLICATIONS

These diodes are optimized to reduce losses and EMI/RFI in

80 A

V

R

400 V

high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

BENEFITS

Cathode to anode voltage V

Continuous forward current I

Maximum repetitive forward current I

Operating junction and
storage temperatures

T

J

R

F(AV)

FSM

FRM

, T

TC = 101 °C 80

TC = 25 °C 800

Square wave, 20 kHz 160

Stg

400 V

ASingle pulse forward current I

- 55 to 175 °C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Breakdown voltage,
blocking voltage

Forward voltage V

Reverse leakage current I

Junction capacitance C

Series inductance L

Document Number: 93025 For technical questions, contact: [e-mail]
Revision: 05-Jun-08 1

,

V

BR

V

R

S

IR = 100 µA 400 - -

r

IF = 80 A - 1.1 1.3

I

F

T

= 80 A, TJ = 175 °C - 0.92 1.08

F

= 80 A, TJ = 125 °C 0.98 1.15

I

F

VR = VR rated - - 50 µA

T

= 150 °C, VR = VR rated - - 2 mA

J

VR = 200 V - 50 - pF

Measured lead to lead 5 mm from package body - 3.5 - nH

V

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80EBU04

Vishay High Power Products

Ultrafast Soft Recovery Diode,

80 A FRED PT

TM

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IF = 1 A, dIF/dt = 200 A/µs, VR = 30 V - 50 60

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

rr

RRM

= 25 °C

J

T

= 125 °C - 151 -

J

TJ = 25 °C - 9.3 -

T

= 125 °C - 17.2 -

J

TJ = 25 °C - 405 -

rr

T

= 125 °C - 1300 -

J

= 80 A

I

F

= 200 V

V

R

dI

/dt = 200 A/µs

F

-87-

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Thermal resistance,
junction to case

Thermal resistance,
junction to heatsink

Weight

Mounting torque

Marking device Case style PowerTab

R

--0.70

thJC

Mounting surface, flat, smooth and greased - 0.2 -

R

thCS

--5.02g

-0.18- oz.

TM

1.2

(10)

-

80EBU04

2.4

(20)

(lbf · in)

nsT

A

nC

K/W

N · m

www.vishay.com For technical questions, contact: [e-mail]
2 Revision: 05-Jun-08

Document Number: 93025

80EBU04

1000

100

(A)

F

10

Instantaneous Forward Current - I

Ultrafast Soft Recovery Diode,

80 A FRED PT

T = 175˚C

J

T = 125˚C

J

T = 25˚C

J

TM

(µA)

Reverse Current - I

(pF)

Vishay High Power Products

1000

100

R

10

1

0.1

0.01

0.001
0100200300400

Reverse Voltage - VR (V)

Fig. 2 - Typical Values of Reverse Current vs.

1000

T

T = 175˚C

J

125˚C

25˚C

Reverse Voltage

T = 25˚C

J

1

0 0.5 1 1.5 2 2.5

Forward Voltage Drop - VFM (V)

Fig. 1 - Maximum Forward Voltage Drop Characteristics

1

D = 0.50

(°C/W)

thJC

Thermal Impedance Z

0.01

D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

0.1

Single Pulse

(Thermal Resistance)

0.00001 0.0001 0.001 0.01 0.1 1 10

t1, Rectangular Pulse Duration (Seconds)

Fig. 4 - Maximum Thermal Impedance Z

100

Junction Capacitance - C

10

1 10 100 1000

Reverse Voltage - VR (V)

Fig. 3 - Typical Junction Capacitance vs.

Reverse Voltage

P

DM

t

1

t

2

Notes:

1. Duty factor D = t1/ t2

2. Peak Tj = Pdm x ZthJC + Tc

Characteristics

thJC

Document Number: 93025 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 05-Jun-08 3