Vishay High Power Products
Ultrafast Soft Recovery Diode,
80 A FRED PT
Cathode Anode
FEATURES
• Ultrafast recovery
• 175 °C operating junction temperature
• Screw mounting only
• Lead (Pb)-free plating
• Designed and qualified for industrial level
TM
80EBU04
RoHS
COMPLIANT
PowerTab
PRODUCT SUMMARY
t
(typical) 50 ns
rr
I
F(AV)
TM
• Reduced RFI and EMI
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI in
80 A
V
R
400 V
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
BENEFITS
Cathode to anode voltage V
Continuous forward current I
Maximum repetitive forward current I
Operating junction and
storage temperatures
T
J
R
F(AV)
FSM
FRM
, T
TC = 101 °C 80
TC = 25 °C 800
Square wave, 20 kHz 160
Stg
400 V
ASingle pulse forward current I
- 55 to 175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
Document Number: 93025 For technical questions, contact: diodes-tech@vishay.com
Revision: 05-Jun-08 1
,
V
BR
V
R
S
IR = 100 µA 400 - -
r
IF = 80 A - 1.1 1.3
I
F
T
= 80 A, TJ = 175 °C - 0.92 1.08
F
= 80 A, TJ = 125 °C 0.98 1.15
I
F
VR = VR rated - - 50 µA
T
= 150 °C, VR = VR rated - - 2 mA
J
VR = 200 V - 50 - pF
Measured lead to lead 5 mm from package body - 3.5 - nH
V
www.vishay.com
80EBU04
Vishay High Power Products
Ultrafast Soft Recovery Diode,
80 A FRED PT
TM
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1 A, dIF/dt = 200 A/µs, VR = 30 V - 50 60
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
= 25 °C
J
T
= 125 °C - 151 -
J
TJ = 25 °C - 9.3 -
T
= 125 °C - 17.2 -
J
TJ = 25 °C - 405 -
rr
T
= 125 °C - 1300 -
J
= 80 A
I
F
= 200 V
V
R
dI
/dt = 200 A/µs
F
-87-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Thermal resistance,
junction to case
Thermal resistance,
junction to heatsink
Weight
Mounting torque
Marking device Case style PowerTab
R
--0.70
thJC
Mounting surface, flat, smooth and greased - 0.2 -
R
thCS
--5.02g
-0.18- oz.
TM
1.2
(10)
-
80EBU04
2.4
(20)
(lbf · in)
nsT
A
nC
K/W
N · m
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
2 Revision: 05-Jun-08
Document Number: 93025
80EBU04
1000
100
(A)
F
10
Instantaneous Forward Current - I
Ultrafast Soft Recovery Diode,
80 A FRED PT
T = 175˚C
J
T = 125˚C
J
T = 25˚C
J
TM
(µA)
Reverse Current - I
(pF)
Vishay High Power Products
1000
100
R
10
1
0.1
0.01
0.001
0100200300400
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current vs.
1000
T
T = 175˚C
J
125˚C
25˚C
Reverse Voltage
T = 25˚C
J
1
0 0.5 1 1.5 2 2.5
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
1
D = 0.50
(°C/W)
thJC
Thermal Impedance Z
0.01
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.1
Single Pulse
(Thermal Resistance)
0.00001 0.0001 0.001 0.01 0.1 1 10
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Z
100
Junction Capacitance - C
10
1 10 100 1000
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
Characteristics
thJC
Document Number: 93025 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 05-Jun-08 3
80EBU04
Vishay High Power Products
180
160
140
DC
120
100
Square wave (D = 0.50)
80% Rated Vr applied
80
Allowable Case Temperature (°C)
see note (1)
60
0 20406080100120
Average Forward Current - I
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
F
(AV)
Ultrafast Soft Recovery Diode,
80 A FRED PT
(A)
TM
250
200
150
trr ( ns )
100
50
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Vr = 200V
Tj = 125˚C
Tj = 25˚C
diF/dt (A/µs )
IF = 160A
IF = 80A
IF = 40A
0001001
140
120
100
80
60
40
20
Average Power Loss ( Watts )
0
0 20406080100120
Average Forward Current - IF
Fig. 6 - Forward Power Loss Characteristics
Note
(1)
Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V
REV
F(AV)
RMS Limit
) x R
REV
x VFM at (I
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
(A)
(AV)
;
thJC
/D) (see fig. 6);
F(AV)
4500
4000
3500
3000
2500
2000
Qrr ( nC )
Vr = 200V
Tj = 125˚C
Tj = 25˚C
IF = 160A
IF = 80A
IF = 40A
1500
1000
500
0
diF/dt (A/µs )
Fig. 8 - Typical Stored Charge vs. dI
R
0001001
/dt
F
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 93025
4 Revision: 05-Jun-08
80EBU04
Ultrafast Soft Recovery Diode,
V
= 200 V
R
TM
80 A FRED PT
Vishay High Power Products
0.01 Ω
L = 70 µH
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
t
I
F
0
rr
t
a
t
b
dIF/dt
(1)
/dt - rate of change of current
(1) dI
F
through zero crossing
- peak reverse recovery current
(2) I
RRM
- reverse recovery time measured
(3) t
rr
from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.
to point where a line passing
F
and 0.50 I
RRM
RRM
Fig. 10 - Reverse Recovery Waveform and Definitions
(2)
I
RRM
(4) Q
and I
(5) dI
current during t
(4)
Q
rr
0.5 I
RRM
(rec)M
Q
=
rr
(5)
/dt
trr x I
RRM
2
portion of t
b
rr
dI
0.75 I
RRM
- area under curve defined by t
rr
RRM
/dt - peak rate of change of
(rec)M
rr
Document Number: 93025 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 05-Jun-08 5
80EBU04
Vishay High Power Products
Ultrafast Soft Recovery Diode,
80 A FRED PT
TM
ORDERING INFORMATION TABLE
Device code
Dimensions http://www.vishay.com/doc?95240
80 E B U 04
51324
1 - Current rating (80 = 80 A)
2 - Single diode
3
- PowerTabTM (ultrafast/hyperfast only)
4 - Ultrafast recovery
5 - Voltage rating (04 = 400 V)
LINKS TO RELATED DOCUMENTS
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
6 Revision: 05-Jun-08
Document Number: 93025
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
®
, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN
®
Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1
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