Vishay High Power Products
Ultrafast Soft Recovery Diode,
80 A FRED Pt
Cathode Anode
TM
FEATURES
• Ultrafast recovery
• 175 °C operating junction temperature
• Screw mounting only
• Lead (Pb)-free plating
• Designed and qualified for industrial level
80EBU02
RoHS
COMPLIANT
PowerTab
PRODUCT SUMMARY
I
F(AV)
TM
• Reduced RFI and EMI
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION/APPLICATIONS
t
rr
V
R
35 ns
80 A
200 V
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
BENEFITS
Cathode to anode voltage V
Continuous forward current I
Maximum repetitive forward current I
Operating junction and
storage temperatures
T
J
R
F(AV)
FSM
FRM
, T
TC = 112 °C 80
TC = 25 °C 800
Square wave, 20 kHz 160
Stg
200 V
ASingle pulse forward current I
- 55 to 175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
Document Number: 93024 For technical questions, contact: diodes-tech@vishay.com
Revision: 04-Jun-08 1
,
V
BR
V
R
S
IR = 50 µA 200 - -
r
IF = 80 A - 0.98 1.13
F
I
= 80 A, TJ = 175 °C - 0.79 0.92
F
VR = VR rated - - 50 µA
T
= 150 °C, VR = VR rated - - 2 mA
J
VR = 200 V - 89 - pF
T
Measured lead to lead 5 mm from package body - 3.5 - nH
V
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80EBU02
Vishay High Power Products
Ultrafast Soft Recovery Diode,
80 A FRED Pt
TM
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - - 35
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
= 25 °C
J
T
= 125 °C - 52 -
J
TJ = 25 °C - 4.4 -
T
= 125 °C - 8.8 -
J
TJ = 25 °C - 70 -
rr
T
= 125 °C - 240 -
J
= 80 A
I
F
= 160 V
V
R
dI
/dt = 200 A/µs
F
-32-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Thermal resistance,
junction to case
Thermal resistance,
junction to heatsink
Weight
Mounting torque
Marking device Case style PowerTab
R
--0.70
thJC
Mounting surface, flat, smooth and greased - 0.2 -
R
thCS
--5.02g
-0.18- oz.
TM
1.2
(10)
-
80EBU02
2.4
(20)
(lbf · in)
nsT
A
nC
K/W
N · m
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
2 Revision: 04-Jun-08
Document Number: 93024
80EBU02
1000
100
(A)
F
10
Instantaneous Forward Current - I
Ultrafast Soft Recovery Diode,
TM
T = 175˚C
J
T = 125˚C
J
T = 25˚C
J
80 A FRED Pt
Vishay High Power Products
1000
100
(µA)
R
10
1
0.1
Reverse Current - I
0.01
0.001
0 50 100 150 200
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current vs.
10000
(pF)
T
1000
T = 175˚C
J
125˚C
25˚C
Reverse Voltage
T = 25˚C
J
1
0 0.5 1 1.5 2 2.5
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
1
D = 0.50
(°C/W)
thJC
Thermal Impedance Z
0.01
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.1
Single Pulse
(Thermal Resistance)
0.00001 0.0001 0.001 0.01 0.1 1 10
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Z
100
Junction Capacitance - C
10
1101001000
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
Characteristics
thJC
Document Number: 93024 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 04-Jun-08 3
80EBU02
Vishay High Power Products
180
160
140
120
100
Square wave (D = 0.50)
80% Rated Vr applied
80
Allowable Case Temperature (°C)
see note (1)
60
0 20406080100120
Average Forward Current - I
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
DC
F
(AV)
Ultrafast Soft Recovery Diode,
80 A FRED Pt
(A)
TM
70
60
50
40
trr ( ns )
30
20
10
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Vr = 160V
Tj = 125˚C
Tj = 25˚C
diF/dt (A/µs )
IF = 160A
IF = 80A
IF = 40A
0001001
120
100
80
60
40
20
Average Power Loss ( Watts )
0
02040608010012
Average Forward Current - I
Fig. 6 - Forward Power Loss Characteristics
Note
(1)
Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V
REV
F(AV)
RMS Limit
) x R
REV
x VFM at (I
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
F
(A)
(AV)
;
thJC
/D) (see fig. 6);
F(AV)
1200
Vr = 160V
800
Tj = 125˚C
Tj = 25˚C
IF = 160A
IF = 80A
IF = 40A
1000
600
Qrr ( nC )
400
200
0
0
diF/dt (A/µs )
0001001
Fig. 8 - Typical Stored Charge vs. dIF/dt
R
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 93024
4 Revision: 04-Jun-08
80EBU02
Ultrafast Soft Recovery Diode,
V
= 200 V
R
TM
80 A FRED Pt
Vishay High Power Products
0.01 Ω
L = 70 µH
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
t
I
F
0
rr
t
a
t
b
dIF/dt
(1)
/dt - rate of change of current
(1) dI
F
through zero crossing
(2) I
- peak reverse recovery current
RRM
- reverse recovery time measured
(3) t
rr
from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.
to point where a line passing
F
and 0.50 I
RRM
RRM
Fig. 10 - Reverse Recovery Waveform and Definitions
(2)
I
RRM
(4) Q
and I
(5) dI
current during t
(4)
Q
rr
0.5 I
RRM
(rec)M
Q
rr
=
(5)
/dt
trr x I
RRM
2
portion of t
b
rr
dI
0.75 I
RRM
- area under curve defined by t
rr
RRM
/dt - peak rate of change of
(rec)M
rr
Document Number: 93024 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 04-Jun-08 5
80EBU02
Vishay High Power Products
Ultrafast Soft Recovery Diode,
80 A FRED Pt
TM
ORDERING INFORMATION TABLE
Device code
Dimensions http://www.vishay.com/doc?95240
80 E B U 02
51324
1 - Current rating (80 = 80 A)
2 - Single diode
3 - PowerTabTM (ultrafast/hyperfast only)
4 - Ultrafast recovery
5 - Voltage rating (02 = 200 V)
LINKS TO RELATED DOCUMENTS
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6 Revision: 04-Jun-08
Document Number: 93024
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
®
, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN
®
Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1
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