Vishay 80EBU02 User Manual
Vishay High Power Products
Ultrafast Soft Recovery Diode,
80 A FRED Pt
Cathode Anode
TM
FEATURES
• Ultrafast recovery
• 175 °C operating junction temperature
• Screw mounting only
• Lead (Pb)-free plating
• Designed and qualified for industrial level
80EBU02
RoHS
COMPLIANT
PowerTab
PRODUCT SUMMARY
I
F(AV)
TM
• Reduced RFI and EMI
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION/APPLICATIONS
t
rr
V
R
35 ns
80 A
200 V
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
BENEFITS
Cathode to anode voltage V
Continuous forward current I
Maximum repetitive forward current I
Operating junction and
storage temperatures
T
J
R
F(AV)
FSM
FRM
, T
TC = 112 °C 80
TC = 25 °C 800
Square wave, 20 kHz 160
Stg
200 V
ASingle pulse forward current I
- 55 to 175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
Document Number: 93024 For technical questions, contact: diodes-tech@vishay.com
Revision: 04-Jun-08 1
,
V
BR
V
R
S
IR = 50 µA 200 - -
r
IF = 80 A - 0.98 1.13
F
I
= 80 A, TJ = 175 °C - 0.79 0.92
F
VR = VR rated - - 50 µA
T
= 150 °C, VR = VR rated - - 2 mA
J
VR = 200 V - 89 - pF
T
Measured lead to lead 5 mm from package body - 3.5 - nH
V
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80EBU02
Vishay High Power Products
Ultrafast Soft Recovery Diode,
80 A FRED Pt
TM
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - - 35
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
= 25 °C
J
T
= 125 °C - 52 -
J
TJ = 25 °C - 4.4 -
T
= 125 °C - 8.8 -
J
TJ = 25 °C - 70 -
rr
T
= 125 °C - 240 -
J
= 80 A
I
F
= 160 V
V
R
dI
/dt = 200 A/µs
F
-32-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Thermal resistance,
junction to case
Thermal resistance,
junction to heatsink
Weight
Mounting torque
Marking device Case style PowerTab
R
--0.70
thJC
Mounting surface, flat, smooth and greased - 0.2 -
R
thCS
--5.02g
-0.18- oz.
TM
1.2
(10)
-
80EBU02
2.4
(20)
(lbf · in)
nsT
A
nC
K/W
N · m
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
2 Revision: 04-Jun-08
Document Number: 93024
80EBU02
1000
100
(A)
F
10
Instantaneous Forward Current - I
Ultrafast Soft Recovery Diode,
TM
T = 175˚C
J
T = 125˚C
J
T = 25˚C
J
80 A FRED Pt
Vishay High Power Products
1000
100
(µA)
R
10
1
0.1
Reverse Current - I
0.01
0.001
0 50 100 150 200
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current vs.
10000
(pF)
T
1000
T = 175˚C
J
125˚C
25˚C
Reverse Voltage
T = 25˚C
J
1
0 0.5 1 1.5 2 2.5
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
1
D = 0.50
(°C/W)
thJC
Thermal Impedance Z
0.01
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.1
Single Pulse
(Thermal Resistance)
0.00001 0.0001 0.001 0.01 0.1 1 10
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Z
100
Junction Capacitance - C
10
1101001000
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
Characteristics
thJC
Document Number: 93024 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 04-Jun-08 3
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