Datasheet 80CPQ020PBF DataSheet (Vishay)

Vishay High Power Products
Schottky Rectifier, 2 x 40 A
80CPQ020PbF
TO-2 47AC
Base
common
cathode
2
13
Anode
1
Common
cathode
Anode
2
2
• 150 °C TJ operation
• Center tap configuration
• Optimized for 3.3 V application
• Ultralow forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term reliability
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for industrial level
DESCRIPTION
PRODUCT SUMMARY
I
F(AV)
V
R
I
RM
2 x 40 A
20 V
1100 mA at 125 °C
This center tap Schottky rectifier has been optimized for ultralow forward voltage drop specifically for 3.3 V output power supplies. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in parallel switching power supplies, converters, reverse battery protection, and redundant power subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Rectangular waveform 80 A
20 V
tp = 5 µs sine 2200 A
40 Apk, TJ = 150 °C (per leg) 0.32 V
Range - 55 to 150 °C
Pb-free
Available
RoHS*
COMPLIANT
VOLTAGE RATINGS
PARAMETER SYMBOL 80CPQ020PbF UNITS
Maximum DC reverse voltage V
R
20 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
Maximum peak one cycle non-repetitive surge current per leg
Non-repetitive avalanche energy per leg E
Repetitive avalanche current per leg I
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94256 For technical questions, contact: diodes-tech@vishay.com Revision: 12-Sep-08 1
per leg
per device 80
I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 138 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 500
TJ = 25 °C, IAS = 6 A, L = 1.5 mH 27 mJ
AS
Current decaying linearly to zero in 1 µs Frequency limited by T
maximum VA = 1.5 x VR typical
J
Following any rated load condition and with rated V
RRM
applied
40
2200
6A
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A
80CPQ020PbF
Vishay High Power Products
Schottky Rectifier, 2 x 40 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
40 A
80 A 0.55
Maximum forward voltage drop per leg
V
FM
40 A
(1)
80 A 0.46
40 A
80 A 0.43
TJ = 125 °C VR = 5 V 110
T
Maximum reverse leakage current per leg
I
RM
Threshold voltage V
Maximum junction capacitance per leg C
Typical series inductance per leg L
F(TO)
T
S
(1)
J
T
J
T
J
TJ = TJ maximum 0.185 V
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 6500 pF
Measured lead to lead 5 mm from package body 7.5 nH
Maximum voltage rate of change dV/dt Rated V
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
T
= 25 °C
J
T
= 125 °C
J
= 150 °C
T
J
= 150 °C VR = 10 V 600
= 25 °C
= 125 °C 1100
R
V
= Rated V
R
R
0.46
0.36
0.32
5.5
10 000 V/µs
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range
Maximum thermal resistance, junction to case per leg
Maximum thermal resistance, junction to case per package
Typical thermal resistance, case to heatsink
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style TO-247AC (JEDEC) 80CPQ020
, T
T
J
Stg
- 55 to 150 °C
0.6
R
thJC
R
thCS
DC operation
0.3
Mounting surface, smooth and greased 0.25
°C/W
6g
0.21 oz.
kgf · cm
(lbf · in)
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Document Number: 94256
2 Revision: 12-Sep-08
80CPQ020PbF
Schottky Rectifier, 2 x 40 A
1000
100
10
- Instantaneous
F
I
Forward Current (A)
1
0.2 0.4 0.6 0.8 1.0
0
V
- Forward Voltage Drop (V)
FM
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
TJ = 150 °C
T
= 125 °C
J
= 25 °C
T
J
10 000
1.2
TJ = 25 °C
Vishay High Power Products
10 000
1000
100
- Reverse Current (mA)
R
0.1
I
0.01
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
10
TJ = 75 °C
1
TJ = 50 °C
TJ = 25 °C
0
4812
V
- Reverse Voltage (V)
R
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
16
20
- Junction Capacitance (pF)
T
C
1000
0
51015
VR - Reverse Voltage (V)
20
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
1
0.1
Single pulse
(thermal resistance)
- Thermal Impedance (°C/W)
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1
D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics (Per Leg)
thJC
25
P
DM
t
1
t
2
1/t2
+ T
thJC
C
10
Document Number: 94256 For technical questions, contact: diodes-tech@vishay.com
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Revision: 12-Sep-08 3
80CPQ020PbF
Vishay High Power Products
150
145
140
135
Square wave (D = 0.50) 10 V applied
130
125
Allowable Case Temperature (°C)
See note (1)
120
0
I
- Average Forward Current (A)
F(AV)
3010 20 40 50
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
10 000
Schottky Rectifier, 2 x 40 A
DC
60
25
D = 0.20 D = 0.25 D = 0.33
20
D = 0.50 D = 0.75
15
10
5
Average Power Loss (W)
0
0
10 20
I
- Average Forward Current (A)
F(AV)
DC
RMS limit
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
6030 40 50
1000
At any rated load condition and with rated V following surge
- Non-Repetitive Surge Current (A)
100
FSM
I
10
100 1000
RRM
applied
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
High-speed
switch
Freewheel
diode
40HFL40S02
Current monitor
D.U.T.
IRFP460
= 25 Ω
R
g
Fig. 8 - Unclamped Inductive Test Circuit
10 000
V
= 25 V
d
+
Note
(1)
Formula used: TC = TJ - (Pd + Pd Pd = Forward power loss = I Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 10 V
REV
F(AV)
) x R
REV
x VFM at (I
thJC
;
F(AV)
/D) (see fig. 6);
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Document Number: 94256
4 Revision: 12-Sep-08
80CPQ020PbF
Schottky Rectifier, 2 x 40 A
ORDERING INFORMATION TABLE
Device code
80 C P Q 020 PbF
1 - Current rating (80 = 80 A)
2 - Circuit configuration:
3 - Package:
4 - Schottky “Q” series
5 - Voltage code (020 = 20 V)
6 - None = Standard production
Tube standard pack quantity: 25 pieces
C = Common cathode
P = TO-247
PbF = Lead (Pb)-free
51324
Vishay High Power Products
6
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95223
Part marking information http://www.vishay.com/doc?95226
SPICE model http://www.vishay.com/doc?95289
Document Number: 94256 For technical questions, contact: diodes-tech@vishay.com Revision: 12-Sep-08 5
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0.10 AC
M M
E
N
(2)
(3)
(4)
(4)
(2) R/2
B
2 x R
S
D
See view B
2 x e
b4
3 x b
2 x b2
L
C
(5) L1
1
2
3
Q
D
A
A2
A
A
A1
C
Ø K BD
M M
A
(6)
Ø P
(Datum B)
FP1
D1 (4)
4
E1
0.01 BD
M M
View A - A
Thermal pad
D2
DDE E
C
C
View B
(b1, b3, b5)
Base metal
c1
(b, b2, b4)
Section C - C, D - D, E - E
(c)
Planting
Lead assignments
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
DIMENSIONS in millimeters and inches
Outline Dimensions
Vishay Semiconductors
SYMBOL
MILLIMETERS INCHES MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
NOTES SYMBOL
MILLIMETERS INCHES
NOTES
A 4.65 5.31 0.183 0.209 D2 0.51 1.30 0.020 0.051 A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3 A2 1.50 2.49 0.059 0.098 E1 13.72 - 0.540 -
b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC b1 0.99 1.35 0.039 0.053 FK 2.54 0.010 b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 L1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 N 7.62 BSC 0.3 b5 2.59 3.38 0.102 0.133 P 3.56 3.66 0.14 0.144
c 0.38 0.86 0.015 0.034 P1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224
D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 1.78 0.216
D1 13.08 - 0.515 - 4 S 5.51 BSC 0.217 BSC
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5M-1994
(2)
(3)
(4)
(5)
(6)
(7)
Contour of slot optional Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body Thermal pad contour optional with dimensions D1 and E1 Lead finish uncontrolled in L1 Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 16-Jun-11
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 95223
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