Vishay 70CRU04 User Manual
Ultrafast Rectifier
Base
Common
Cathode
Anode Anode
Common
Cathode
13
2
1
2
2
Document Number: 93023
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1
Bulletin PD-20637 rev. A 12/06
70CRU04
Features
• Two Common-Cathode Diodes
• Ultrafast Reverse Recovery
• Ultrasoft Reverse Recovery Current Shape
• Low Forward Voltage Drop
• Low Leakage Current
• Optimized for Power Conversion: Welding and Industrial SMPS Applications
• Up to 175°C Operating Junction Temperature
Description/ Applications
The 70CRU04 integrates two state-of-the-art International Rectifier’s Ultrafast recovery rectifiers in the commoncathode configuration. The planar structure of the diodes, and the platinum doping life-time control, provide a
Ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics.
These devices are thus intended for high frequency applications in which the switching energy is designed not to
be predominant portion of the total energy, such as in the output rectification stage of Welding machines, SMPS,
DC-DC converters. Their extremely optimized stored charge and low recovery current reduce both overdissipation in the switching elements (and snubbers) and EMI/RFI.
t
= 38ns
rr
I
= 70Amp
F(AV)
@TC = 116°C
VR = 400V
Absolute Maximum Ratings
Parameters Max Units
V
R
I
F(AV)
I
FSM
P
D
TJ, T
Cathode to Anode Voltage 400 V
Continuous Forward Current TC = 116°C Per Diode 35 A
Single Pulse Forward Current TC = 25°C Per Diode 300
Maximum Power Dissipation TC = 100°C Per Module 47 W
Operating Junction and Storage Temperatures - 55 to 175 °C
STG
Case Styles
TO-218
70CRU04
Document Number: 93023
www.vishay.com
2
Bulletin PD-20637 rev. A 12/06
Electrical Characteristics per Diode @ T
= 25°C (unless otherwise specified)
J
Parameters Min Typ Ma x Units Test Conditions
VBR, VrBreakdown Voltage, 400 - - V IR = 100μA
Blocking Voltage
V
F
Forward Voltage - 1.11 1.32 V IF = 35A
- 0.98 1.14 V IF = 35A, TJ = 125°C
- 0.92 1.05 V IF = 35A, TJ = 175°C
I
R
Reverse Leakage Current - - 100 μAVR = VR Rated
--2mATJ = 150°C, VR = VR Rated
C
T
Dynamic Recovery Characteristics per Diode @ T
Junction Capacitance - 70 - pF VR = 400V
= 25°C (unless otherwise specified)
J
Parameters Min Typ Ma x Units Test Conditions
t
t
I
RRM
Q
rr
rr
rr
Reverse Recovery Time - 32 38 ns TJ = 25°C
Reverse Recovery Time - 72 - ns TJ = 25°C
- 130 - TJ = 125°C
Peak Recovery Current - 7.7 - A TJ = 25°C
- 16.5 - TJ = 125°C
Reverse Recovery Charge - 0.28 - μCTJ = 25°C
- 1.08 - TJ = 125°C
I
= 1A
F
VR = 30V
diF /dt = 200A/μs
I
= 35A
F
VR = 200V
diF /dt = 200A/μs
Thermal - Mechanical Characteristics
Parameters Min Typ Max Units
R
thJC
R
thJC
R
thCS
Wt Weight - 4 - g
T Mounting Torque 1.2 - 2.4 N * m
(1) Mounting Surface, Flat, Smooth and Greased
Thermal Resistance, Junction to Case Per Diode - 0.8 1.6 K/W
Thermal Resistance, Junction to Case Both Diodes - 0.4 0.8
(1)
Thermal Resistance, Case to Heatsink - 0.2 -
- 0.13 - (oz)
10 - 20 lbf.in
Marking Device 70CRU04
70CRU04
1
1 10 100 1000
1
0 0.5 1 1.5 2 2.5 3
0
0
0
50 100 150 200 250 300 350 400
Document Number: 93023
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3
Bulletin PD-20637 rev. A 12/06
000
(A)
F
100
10
Instantaneous Forward Current - I
Tj = 175˚C
Tj = 125˚C
Tj = 25˚C
1000
Tj = 175˚C
100
( μA)
R
10
150˚C
125˚C
1
0.1
Reverse Current - I
0.01
25˚C
.001
Reverse Voltage - VR (V)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
000
Tj = 25˚C
(pF)
T
100
Junction Capacitance - C
1
Forward Voltage Drop - VFM (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
(Per Diode)
10
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
10
(°C/W)
thJC
1
0.1
Thermal Impedance Z
.01
0.0001 0.001 0.01 0.1 1 1
Single Pulse
(Thermal Resistance)
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
P
DM
t
1
t
2
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
Characteristics (Per Diode)
thJC
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