Vishay 70CRU02PbF User Manual
TO-218
PRODUCT SUMMARY
t
rr
I
at TC = 145 °C 2 x 35 A
F(AV)
V
R
Anode
1
Base
common
cathode
2
1
2
Common
cathode
28 ns
200 V
Ultrafast Rectifier,
2 x 35 A FRED Pt
FEATURES
• Two common-cathode diodes
• Ultrafast reverse recovery
• Ultrafast reverse recovery current shape
• Low forward voltage drop
• Low leakage current
• Optimized for power conversion: welding and industrial
3
Anode
2
SMPS applications
• Up to 175 °C operating junction temperature
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for industrial level
DESCRIPTION
The 70CRU02 integrates two state of the art Vishay HPP
ultrafast recovery rectifiers in the common-cathode
configuration. The planar structure of the diodes, and the
platinum doping life-time control, provide a ultrasoft recovery
current shape, together with the best overall performance,
ruggedness and reliability characteristics. These devices are
thus intended for high frequency applications in which the
switching energy is designed not to be predominant portion
of the total energy, such as in the output rectification stage
of welding machines, SMPS, dc-to-dc converters. Their
extremely optimized stored charge and low recovery current
reduce both over-dissipation in the switching elements (and
snubbers) and EMI/RFI.
70CRU02PbF
Vishay High Power Products
TM
Available
RoHS*
COMPLIANT
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Continuous forward current per diode I
Cathode to anode voltage V
Single pulse forward current per diode I
Maximum power dissipation per module P
Operating junction and storage temperatures T
J
F(AV)
R
FSM
D
, T
TC = 145 °C 35 A
200 V
TC = 25 °C 300 A
TC = 100 °C 67 W
Stg
- 55 to 175 °C
ELECTRICAL SPECIFICATIONS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
,
V
BR
V
R
F
R
T
S
IR = 60 µA 200 - -
IF = 35 A - 0.95 1.09
I
= 35 A, TJ = 125 °C - 0.9 1.0
F
I
= 35 A, TJ = 175 °C - 0.85 0.9
F
VR = VR rated - - 60 µA
= 150 °C, VR = VR rated - - 2 mA
T
J
VR = 200 V - 50 - pF
Measured from A-lead to K-lead 5 mm
from package body
-10-nH
V
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94509 For technical questions, contact: diodes-tech@vishay.com
Revision: 21-Jul-08 1
www.vishay.com
70CRU02PbF
Vishay High Power Products
Ultrafast Rectifier,
2 x 35 A FRED Pt
TM
DYNAMIC RECOVERY CHARACTERISTICS PER DIODE (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
= 1 A
I
F
V
= 30 V
R
dI
/dt = 200 A/µs
F
= 35 A
I
F
= 100 V
V
RR
dI
/dt = 200 A/µs
F
--28
-26-
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
TJ = 25 °C
T
= 125 °C - 34 -
J
T
= 25 °C
J
= 125 °C - 49 -
T
J
TJ = 25 °C - 3.7 -
T
= 125 °C - 8.2 -
J
TJ = 25 °C - 48.7 -
rr
T
= 125 °C - 202 -
J
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Thermal resistance,
junction to case
Thermal resistance,
case to heatsink
per diode
both legs - - 0.45
R
thJC
R
thCS
Mounting surface, flat, smooth and greased - 0.2 -
Weight
Mounting torque
Marking device Case style TO-218 70CRU02
-0.80.9
-5.5- g
-0.2-oz.
1.2
(10)
2.4
(20)
(lbf ⋅ in)
ns
A
µC
K/W
N ⋅ m
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94509
2 Revision: 21-Jul-08
70CRU02PbF
1000
(A)
100
F
T = 175˚C
10
Instantaneous Forward Current - I
T = 125˚C
T = 25˚C
Ultrafast Rectifier,
2 x 35 A FRED Pt
TM
Vishay High Power Products
1000
T = 175˚C
J
100
(μA)
R
125˚C
10
1
25˚C
Reverse Current - I
0.1
0.01
0 50 100 150 200
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
J
J
J
(pF)
T
T = 25˚C
J
1
0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Diode)
1
(°C/W)
thJC
0.1
Single Pulse
(Thermal Resistance)
Thermal Impedance Z
0.01
0.0001 0.001 0.01 0.1 1
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Z
100
Junction Capacitance - C
10
1 10 100 1000
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs.
P
DM
t
1
t
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
Characteristics (Per Diode)
thJC
Reverse Voltage
2
Document Number: 94509 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 21-Jul-08 3
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