Vishay 70CRU02 User Manual
Ultrafast Rectifier
Base
Common
Cathode
Anode Anode
Common
Cathode
13
2
1
2
2
Document Number: 93022
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1
Bulletin PD-20619 rev. C 12/06
70CRU02
Features
• Two Common-Cathode Diodes
• Ultrafast Reverse Recovery
• Ultrasoft Reverse Recovery Current Shape
• Low Forward Voltage Drop
• Low Leakage Current
• Optimized for Power Conversion: Welding and Industrial SMPS Applications
• Up to 175°C Operating Junction Temperature
Description/ Applications
The 70CRU02 integrates two state-of-the-art International Rectifier’s Ultrafast recovery rectifiers in the commoncathode configuration. The planar structure of the diodes, and the platinum doping life-time control, provide a
Ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics.
These devices are thus intended for high frequency applications in which the switching energy is designed not to
be predominant portion of the total energy, such as in the output rectification stage of Welding machines, SMPS,
DC-DC converters. Their extremely optimized stored charge and low recovery current reduce both overdissipation in the switching elements (and snubbers) and EMI/RFI.
t
= 28ns
rr
I
= 70A
F(AV)
@TC = 145°C
VR = 200V
Absolute Maximum Ratings
Parameters Max Units
V
R
I
F(AV)
I
FSM
P
D
TJ, T
Cathode to Anode Voltage 200 V
Continuous Forward Current TC = 145°C Per Diode 35 A
Single Pulse Forward Current TC = 25°C Per Diode 300
Maximum Power Dissipation TC = 100°C Per Module 67 W
Operating Junction and Storage Temperatures - 55 to 175 °C
STG
Case Styles
TO-218
70CRU02
Document Number: 93022
www.vishay.com
2
Bulletin PD-20619 rev. C 12/06
Electrical Characteristics per Diode @ T
= 25°C (unless otherwise specified)
J
Parameters Min T yp Ma x Units Test Conditions
VBR, VrBreakdown Voltage, 200 - - V I R = 60μA
Blocking Voltage
V
F
Forward Voltage - 0.95 1.09 V I F = 35A
- 0.9 1.0 V I F = 35A, TJ = 125°C
- 0.85 0.9 V I F = 35A, TJ = 175°C
I
R
Reverse Leakage Current - - 60 μAV R = VR Rated
--2mAT J = 150°C, VR = VR Rated
C
T
L
S
Junction Capacitance - 50 - pF V R = 200V
Series Inductance - 10 - nH Measured from A-lead to K-lead 5mm from
package body
Dynamic Recovery Characteristics per Diode @ T
= 25°C (unless otherwise specified)
J
Parameters Min T yp Ma x Units Test Conditions
t
rr
I
RRM
Q
Reverse Recovery Time - - 28 ns TJ = 25°C
-34- TJ = 125°C
-26- TJ = 25°C
-49- TJ = 125°C
Peak Recovery Current - 3.7 - A TJ = 25°C
- 8.2 - TJ = 125°C
Reverse Recovery Charge - 48.7 - nC TJ = 25°C
rr
- 202 - TJ = 125°C
I
= 1A
F
VR = 30V
diF /dt = 200A/μs
I
= 35A
F
VRR = 100V
di/dt = 200A/μs
Thermal - Mechanical Characteristics
Parameters Min Typ Max Units
R
thJC
R
thJC
R
thCS
Wt Weight - 5.5 - g
T Mounting Torque 1.2 - 2.4 N * m
(1) Mounting Surface, Flat, Smooth and Greased
Thermal Resistance, Junction to Case Per Diode - 0.8 0.9 K/W
Thermal Resistance, Junction to Case Both Leg - - 0.45
(1)
Thermal Resistance, Case to Heatsink - 0.2 -
- 0.2 - (oz)
10 - 20 lbf.in
Marking Device 70CRU02
70CRU02
1
0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4
1
0 50 100 150 200
0
1
1
1 10 100 1000
Document Number: 93022
www.vishay.com
3
Bulletin PD-20619 rev. C 12/06
000
(A)
100
F
T = 175˚C
10
Instantaneous Forward Current - I
J
T = 125˚C
J
T = 25˚C
J
000
T = 175˚C
J
100
( μA)
R
125˚C
10
1
25˚C
Reverse Current - I
0.1
0.01
Reverse Voltage - VR (V)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
000
T = 25˚C
J
(pF)
T
100
Junction Capacitance - C
1
Fig. 1 - Typical Forward Voltage Drop Characteristics
Forward Voltage Drop - VFM (V)
(Per Diode)
10
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
1
(°C/W)
thJC
0.1
Single Pulse
(Thermal Resistance)
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
P
DM
t
1
t
2
Thermal Impedance Z
.01
0.0001 0.001 0.01 0.1
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
Characteristics (Per Diode)
thJC
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