VISHAY 6N137, 6N137-X006, 6N137-X007, VO2601, VO2601-X006 User Manual
...
6N137 / VO2601 / 11 / VO2630 / 31 / VO4661
High Speed Optocoupler, 10 Mbd
Features
• Choice of CMR performance of 10 kV/µs,
5 kV/µs, and 100 V/µs
• High speed: 10 Mbd typical
•+ 5 V CMOS compatibility
• Guaranteed AC and DC performance over temperature: - 40 to + 100 °C Temp. Range
• Pure tin leads
• Meets IEC60068-2-42 (SO
IEC60068-2-43 (H
S) requirements
2
) and
2
• Low input current capability: 5 mA
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• CUL - File No. E52744, equivalent to CSA bulletin
5A
• DIN EN 60747-5-2 (VDE0884)
• Reinforced insulation rating per IEC60950
2.10.5.1
• VDE available with Option 1
Applications
Microprocessor System Interface
PLC, ATE input/output isolation
Computer peripheral interface
Digital Fieldbus Isolation: CC-Link, DeviceNet,
Profibus, SDS
High speed A/D and D/A conversion
AC Plasma Display Panel Level Shifting
Multiplexed Data Transmission
Digital control power supply
Ground loop elimination
Description
The 6N137, VO2601 and VO2611 are single channel
10 Mbd optocouplers utilizing a high efficient input
LED coupled with an integrated optical photodiode IC
detector. The detector has an open drain NMOS-transistor output, providing less leakage compared to an
e3
Vishay Semiconductors
Single channel
1
NC
2
A
3
C
4
NC
6N137, VO2601, VO2611
8
7
6
5
V
CC
V
E
V
O
GND
18921_5
open collector Schottky clamped transistor output.
The VO2630, VO2631 and VO4661 are dual channel
10MBd optocouplers. For the single channel type, an
enable function on pin 7 allows the detector to be
strobed. The internal shield provides a guaranteed
common mode transient immunity of 5 kV/µs for the
VO2601 and VO2631 and 10 kV/µs for the VO2611
and VO4661. The use of a 0.1 µF bypass capacitor
connected between pin 5 and 8 is recommended.
Dual channel
1
A1
2
C1
3
C2
4
A2
VO2630, VO2631, VO4661
8
7
6
5
V
CC
V
O1
V
O2
GND
Order Information
Part Remarks
6N137 100 V/µs, Single channel, DIP-8
6N137-X006 100 V/µs, Single channel, DIP-8 400 mil
6N137-X007 100 V/µs, Single channel, SMD-8
VO2601 5 kV/µs, Single channel, DIP-8
VO2601-X006 5 kV/µs, Single channel, DIP-8 400 mil
VO2601-X007 5 kV/µs, Single channel, SMD-8
VO2611 10 kV/µs, Single channel, DIP-8
VO2611-X006 10 kV/µs, Single channel, DIP-8 400 mil
VO2611-X007 10 kV/µs, Single channel, SMD-8
VO2630 100 V/µs, Dual channel, DIP-8
VO2630-X006 100 V/µs, Dual channel, DIP-8 400 mil
VO2630-X007 100 V/µs, Dual channel, SMD-8
VO2631 5 kV/µs, Dual channel, DIP-8
VO2631-X006 5 kV/µs, Dual channel, DIP-8 400 mil
VO2631-X007 5 kV/µs, Dual channel, SMD-8
VO4661 10 kV/µs, Dual channel, DIP-8
VO4661-X006 10 kV/µs, Dual channel, DIP-8 400 mil
O4661-X007 10 kV/µs, Dual channel, SMD-8
V
Document Number 84732
Rev. 1.0, 07-Jun-05
www.vishay.com
1
6N137 / VO2601 / 11 / VO2630 / 31 / VO4661
Vishay Semiconductors
Truth Table (Positive Logic)
LED ENABLE OUTPUT
ON H L
OFF H H
ON L H
OFF L H
ON NC L
OFF NC H
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Test condition Symbol Value Unit
Average forward current
Average forward current
1)
2)
Reverse input voltage V
Enable input voltage
Enable input current
1)
1)
Surge current t = 100 µsI
1)
Package: Single DIP-8
2)
Package: Dual DIP-8
I
F
I
F
R
V
E
I
E
FSM
20 mA
15 mA
5 V
VCC + 0.5 VV
5mA
200 mA
Output
Parameter Test condition Symbol Value Unit
Supply voltage 1 minute max. V
Output current I
Output voltage V
Output power dissipation
Output power dissipation
1)
Package: Single DIP-8
2)
Package: Dual DIP-8
1)
2)
Coupler
Parameter Test condition Symbol Value Unit
Storage temperature T
Operating temperature T
Lead solder temperature
Solder reflow temperature
1)
2)
Isolation test voltage t = 1.0 sec. V
1)
Package: DIP-8 through hole
2)
Package: DIP-8 SMD
for 10 sec. 260 °C
for 1 minute 260 °C
P
P
CC
O
O
O
O
stg
amb
ISO
7 V
50 mA
7 V
85 mW
60 mW
- 55 to + 150 °C
- 40 to + 100 °C
5300 V
RMS
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2
Document Number 84732
Rev. 1.0, 07-Jun-05
6N137 / VO2601 / 11 / VO2630 / 31 / VO4661
Vishay Semiconductors
Recommended Operating Conditions
Parameter Test condition Symbol Min Ty p. Max Unit
Operating temperature T
Supply voltage V
Input current low level I
Input current high level I
Logic high enable voltage V
Logic low enable voltage V
Output pull up resistor R
Fanout R
= 1 kΩ N5-
L
amb
CC
FL
FH
EH
EL
L
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Test condition Symbol Min Ty p. Max Unit
Input forward voltage I
Reverse current V
Input capacitance f = 1 MHz, V
= 10 mA V
F
= 5.0 V I
R
= 0 V C
F
F
R
I
- 40 100 °C
4.5 5.5 V
0 250 µA
515mA
2.0 V
CC
V
0.0 0.8 V
330 4 K Ω
1.1 1.4 1.7 V
0.01 10 µA
55 pF
Output
Parameter Test condition Symbol Min Ty p. Max Unit
V
High level supply
current (single
channel)
High level supply
current (dual
channel)
Low level supply
current (single
channel)
Low level supply
current (dual
channel)
High level output
current
Low level output
voltage
Input treshold
current
High level enable
current
Low level enable
current
High level enable
voltage
Low level enable
voltage
= 0.5 V, IF = 0 mA I
E
V
= VCC, IF = 0 mA I
E
I
= 0 mA I
F
V
= 0.5 V, IF = 10 mA, I
E
V
= VCC, IF = 10 mA I
E
I
= 10 mA I
F
V
= 2.0 V, VO = 5.5 V, IF = 250 µAI
E
= 2.0 V, IF = 5 mA,
V
E
(sinking) = 13 mA
I
OL
V
= 2.0 V, VO = 5.5 V,
E
(sinking) = 13 mA
I
OL
V
= 2.0 V I
E
= 0.5 V I
V
E
CCH
CCH
CCH
CCL
CCL
CCL
V
I
V
V
OH
OL
TH
EH
EL
EH
EL
2.0 V
4.1 7.0 mA
3.3 6.0 mA
6.9 12.0 mA
4.0 7.0 mA
3.3 6.0 mA
6.5 12.0 mA
0.002 1 µA
0.2 0.6 V
2.4 5.0 mA
- 0.6 - 1.6 mA
- 0.8 - 1.6 mA
0.8 V
Document Number 84732
Rev. 1.0, 07-Jun-05
www.vishay.com
3
6N137 / VO2601 / 11 / VO2630 / 31 / VO4661
Vishay Semiconductors
Switching Characteristics
Over Recommended Temperature (Ta = - 40 to + 100 °C), VCC = 5 V, IF = 7.5 mA unless otherwise specified.
All Typicals at T
Propagation delay time to high
output level
Propagation delay time to low
output level
Pulse width distortion R
Propagation delay skew R
Output rise time (10 - 90 %) R
Output fall time (90 - 10 %) R
Propagation delay time of
enable from V
Propagation delay time of
enable from V
*
75 ns applies to the 6N137 only, a JEDEC registered specification
= 25 °C, VCC = 5 V.
a
Parameter Test condition Symbol Min Ty p. Max Unit
EH
EL
to V
to V
EH
= 350 Ω, CL = 15 pF t
R
L
R
= 350 Ω, CL = 15 pF t
L
= 350 Ω, CL = 15 pF | t
L
= 350 Ω, CL = 15 pF t
L
= 350 Ω, CL = 15 pF t
L
= 350 Ω, CL = 15 pF t
L
RL = 350 Ω, CL = 15 pF,
= 0 V, VEH = 3 V
EL
V
EL
RL = 350 Ω, CL = 15 pF,
= 0 V, VEH = 3 V
V
EL
PHL
PLH
t
PLH
PHL
t
PHL
- t
| 2.9 35 ns
PLH
PSK
r
f
t
ELH
t
EHL
20 48
25 50
840ns
23 ns
7ns
12 ns
11 ns
75
*
ns
100 ns
75
*
ns
100 ns
Pulse Gen.
Z=50Ω
o
t =t =5ns
r
f
InputI
F
Monitoring
Node
V
CC
V
CC
8
E
7
0.1 µF
Bypass
6
5
Single Channel
1
I
F
2
3
R
M
4
The Probe and Jig Capacitances are included in C
V
V
OUT
GND
Figure 1. Single Channel Test Circuit for t
Pulse Gen.
Z=50Ω
o
t =t =5ns
r
f
I
F
1
Input
Monitoring
Node
R
2
3
M
4
18963-2
R
L
OutputV
Monitoring
Node
C = 15 pF
L
L
Dual Channel
V
GND
O
CC
InputI
OutputV
8
7
6
5
F
O
PLH
0.1 µF
Bypass
, t
t
PHL
PHL
V
, tr and t
CC
R
L
=15pF
C
L
f
OutputV
O
Monitoring
Node
= 7.5 mA
I
F
= 3.75 mA
I
F
0mA
V
OH
1.5 V
V
OL
t
PL H
18964-2
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4
Figure 2. Dual Channel Test Circuit for t
PLH
, t
PHL
, tr and t
f
Document Number 84732
Rev. 1.0, 07-Jun-05
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