VISHAY 6N 136 VIS Datasheet

VISHAY

i179081

1

2

3

4

8

7

6

5

C(VCC)

NC

A

C

NC

B(V

B

)

C(V

O

)

E (GND)

6N135/ 6N136

Vishay Semiconductors

High Speed Optocoupler, 1 MBd, Photodiode with Transistor
Output

Features

• Isolation Test Voltage: 5300 V

• TTL Compatible

• High Bit Rates: 1.0 Mbit/s

• High Common-Mode Interference Immunity

• Bandwidth 2.0 MHz

• Open-Collector Output

• External Base Wiring Possible

Agency Approvals

• UL - File No. E52744 System Code H or J

RMS

• DIN EN 60747-5-2(VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1

• CSA 93751

Description

The 6N135 and 6N136 are optocouplers with a GaA­IAs infrared emitting diode, optically coupled with an
integrated photo detector which consists of a photo
diode and a high-speed transistor in a DIP-8 plastic
package.

Order Information

Part Remarks

6N135 CTR ≥ 7 %, DIP-8

6N136 CTR ≥ 19 %, DIP-8

6N135-X007 CTR ≥ 7 %, SMD-8 (option 7)

6N136-X006 CTR ≥ 19 %, DIP-8 400 mil (option 6)

6N136-X007 CTR ≥ 19 %, SMD-8 (option 7)

6N136-X009 CTR ≥ 19 %, SMD-8 (option 9)

For additional information on the available options refer to
Option Information.

Signals can be transmitted between two electrically
separated circuits up to frequencies of 2.0 MHz. The
potential difference between the circuits to be coupled
should not exceed the maximum permissible refer­ence voltages

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Parameter Test condition Symbol Value Unit

Reverse voltages V

Forward current I

Peak forward current t = 1.0 ms, duty cycle 50 % I

Maximum surge forward current t ≤ 1.0 µs, 300 pulses/s 1.0 A

Thermal resistance R

Power dissipation T

Document Number 83604

Rev. 1.3, 26-Apr-04

= 70 °C P

amb

R

F

FSM

th

diss

5.0 V

25 mA

50 mA

700 K/W

45 mW

www.vishay.com

1

6N135/ 6N136

VISHAY

Vishay Semiconductors

Output

Parameter Test condition Symbol Val ue Unit

Supply voltage V

Output voltage V

Emitter-base voltage V

Output current I

S

O

EBO

O

- 0.5 to 15 V

- 0.5 to 15 V

5.0 V

8.0 mA

Maximum output current 16 mA

Base current I

B

5.0 mA

Thermal resistance 300 K/W

Power dissipation T

= 70 °C P

amb

diss

100 mW

Coupler

Parameter Test condition Symbol Val ue Unit

Isolation test voltage (between

t = 1.0 s V

ISO

emitter and detector climate per
DIN 50014 part 2, NOV 74

Pollution degree (DIN VDE

0109)

Creepage ≥ 7.0 mm

Clearance ≥ 7.0 mm

Comparative tracking index per
DIN IEC112/VDE 0303 part 1,
group IIIa per DIN VDE 6110

Isolation resistance V

= 500 V, T

IO

= 500 V, T

V

IO

Storage temperature range T

Ambient temperature range T

Soldering temperature max. ≤ 10 s, dip soldering

≥ 0.5 mm from case bottom

= 25 °C R

amb

= 100 °C R

amb

T

IO

IO

stg

amb

sld

5300 V

2.0

175

12

≥ 10

11

≥ 10

- 55 to + 125 °C

- 55 to + 100 °C

260 °C

RMS

Ω

Ω

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Parameter Test condition Symbol Min Ty p. Max Unit

Forward voltage I

Breakdown voltage I

Reverse current V

Capacitance V

Temperature coefficient, forward voltage I

www.vishay.com

2

= 16 mA V

F

= 10 µAVBR5.0 V

R

= 5.0 V I

R

= 0 V, f = 1.0 MHz C

R

= 16 mA ∆VF/∆T

F

F

R

O

A

1.6 1.9 V

0.5 10 µA

125 pF

-1.7 mV/°C

Document Number 83604

Rev. 1.3, 26-Apr-04

VISHAY

6N135/ 6N136

Vishay Semiconductors

Output

Parameter Test condition Part Symbol Min Ty p. Max Unit

Logic low supply current I

Supply current, logic high I

Output voltage, output low I

Output current, output high I

= 16 mA, VO open, VCC = 15 V I

F

= 0 mA, VO open, VCC = 15 V I

F

= 16 mA, VCC = 4.5 V,

F

I

= 1.1 mA

O

I

= 16 mA, VCC = 4.5 V,

F

I

= 2.4 mA

O

= 0 mA, VO = VCC = 5.5 V I

F

= 0 mA, VO = VCC = 15 V I

I

F

6N135 V

6N136 V

CCL

CCH

OL

OL

OH

OH

150 µA

0.01 1 µA

0.1 0.4 V

0.1 0.4 V

3.0 500 nA

0.01 1 µA

Coupler

Parameter Test condition Symbol Min Ty p. Max Unit

Capacitance (input-output) f = 1.0 MHz C

IO

0.6 pF

Current Transfer Ratio

Parameter Test condition Part Symbol Min Ty p. Max Unit

Current Transfer
Ratio

= 16 mA, VO = 0.4 V, VCC = 4.5 V 6N135 CTR 7 16 %

I

F

6N136 CTR 19 35 %

= 16 mA, VO = 0.5 V, VCC = 4.5 V 6N135 CTR 5 %

I

F

6N136 CTR 15 %

Switching Characteristics

Parameter Test condition Part Symbol Min Ty p. Max Unit

High-low I

Low-high I

= 16 mA, VCC = 5.0 V, RL = 4.1 kΩ 6N135 t

F

= 16 mA, VCC = 5.0 V, RL = 1.9 kΩ 6N136 t

I

F

= 16 mA, VCC = 5.0 V, RL = 4.1 kΩ 6N135 t

F

= 16 mA, VCC = 5.0 V, RL = 1.9 kΩ 6N136 t

I

F

PHL

PHL

PLH

PLH

0.3 1.5 µs

0.2 0.8 µs

0.3 1.5 µs

0.2 0.8 µs

Common Mode Transient Immunity

Parameter Test condition Part Symbol Min Ty p. Max Unit

High I

Low I

= 0 mA, VCM = 10 V

F

I

= 0 mA, VCM = 10 V

F

= 16 mA, VCM = 10 V

F

= 16 mA, VCM = 10 V

I

F

, VCC = 5.0 V, RL = 4.1 kΩ 6N135 | CMH | 1000 V/µs

P-P

, VCC = 5.0 V, RL = 1.9 kΩ 6N136 | CMH | 1000 V/µs

P-P

, VCC = 5.0 V, RL = 4.1 kΩ 6N135 | CML | 1000 V/µs

P-P

, VCC = 5.0 V, RL = 1.9 kΩ 6N136 | CML | 1000 V/µs

P-P

Document Number 83604

Rev. 1.3, 26-Apr-04

www.vishay.com

3

6N135/ 6N136

i6n135_06

25

20

15

10

5

0

0 5 10 15 20 25

Output Voltage, Vo(V)

Output Current, Io(mA)

IF=15mA

IF=10mA

IF=5mA

IF=40mA

IF=20mA

IF=35mA

IF=30mA

IF=25mA

(VCC= 5.0 V)

i6n135_07

8

7

6

5

4

3

2

1

0

-60 -40 -20 0 20 40 60 80 100

Output Current, Io(mA)

Temperature, Ta(°C)

IF = 20mA

IF = 16mA

IF = 10mA

IF=2mA

IF=1mA

@VO=0.4 V, VCC=5.0

i6n135_08

900

800

700

600

500

400

300

200

100

0

-60 -40 -20 0 20 40 60 80 100

tp - Propagation Delay Time - ns

Temperature, Ta(°C)

TpLH @ 3V

TpHL @ 3V

TpHL @ 1.5V

TpLH @ 1.5V

6N136 @ VCC= 5.0 V,
IF= 16 mA, RL= 1.9 kΩ

Vishay Semiconductors

VISHAY

Typical Characteristics (T

20

15

75°C

- LED Current in mA
F

I

i6n135_03

10

5

0

VF- LED forward Voltage

25°C

= 25 °C unless otherwise specified)

amb

Fig. 1 LED Forward Current vs.Forward Voltage

30

20

0°C

1.71.61.51.41.3

Fig. 4 Output Current vs. Output Voltage

LED Current in ma

10

F

I

i6n135_04

0

Ambient Temperature in °C

100806040200

Fig. 2 Permissible Forward LED Current vs. Temperature

120

Total Power in mW

i6n135_05

100

80

60

40

20

Detector

Emitter

0

100806040200

Ambient Temperature in °C

Fig. 5 Output Current vs. Temperature

Fig. 3 Permissible Power Dissipation vs. Temperature

www.vishay.com

4

Fig. 6 Propagation Delay vs. Temperature

Document Number 83604

Rev. 1.3, 26-Apr-04

VISHAY

i6n135_09

0.6

0.5

0.4

0.3

0.2

0.1

0

10 15 20 25

ˇ

∆i

F

/∆i

O

/ Small Signal Current

Transfer Ratio

IF/mA

5

0

(VCC= 5.0 V, RL= 100 Ω)

1400

6N135 @ VCC= 5.0 V,

1200

IF=16mA,RL= 4.1 kΩ

1000

800

600

400

200

tp - Propagation Delay Time - ns

0

-60 -40 -20 100

i6n135_09

TpLH

TpHL

0

20 40

Temperature, Ta (°C)

60

6N135/ 6N136

Vishay Semiconductors

80

Fig. 7 Propagation Delay vs. Temperature

100

10

1

VCC=VO=15 V

V

CC=VO

0.1

0.01

- Collector Current, IC (nA)

OH

I

0.001
0

-60 -40 -20 100

i6n135_10

20

Temperature, T

40

60 80

(°C)

A

Fig. 8 Logic High Output Current vs.Temperature

Pulse generator
Z

=50 Ω

O

t

tf=5 ns

,

r

duty cycle 10%
t≤100 µs

=5 V

Fig. 9 Small Signal Current Transfer Ratio vs. Quiescent Input

Current

I

F

t

R

L

C
15 pF

5V

V

L

V

O

O

V

OL

t

PHL

t

PLH

5V

1.5 V

t

i6n135_01

I

Monitor

F

I

F

100

1

2

3

4

Ω

ı

8

7

6

5

Fig. 10 Switching Times

Document Number 83604

Rev. 1.3, 26-Apr-04

www.vishay.com

5

6N135/ 6N136

Vishay Semiconductors

i6n135_02

I

1

F

2

A

B

V

FF

3

4

+V

CM

Pulse generator

=50

Z

O

,

t

tf=8 ns

r

8

7

6

5

Fig. 11 Common-Mode Interference Immunity

Package Dimensions in Inches (mm)

5V

R

L

V

O

V

CM

10 V

90%

10% 90%

0V

t

V

O

5V

V

O

V

r

OL

t

f

10%

B: I

A: I

=0 mA

F

=16 mA

F

VISHAY

t

t

t

i178006

.255 (6.48)
.268 (6.81)

.030 (0.76)
.045 (1.14)

4° typ.

.050 (1.27)

.018 (.46)
.022 (.56)

4

3

5

6

.379 (9.63)
.390 (9.91)

.100 (2.54) typ.

1

2

78

.031 (0.79)

.020 (.51 )
.035 (.89 )

pin one ID

.130 (3.30)
.150 (3.81)

ISO Method A

.300 (7.62)

typ.

10°

3°–9°
.008 (.20)

.012 (.30)

.110 (2.79)
.130 (3.30)

.230(5.84)
.250(6.35)

www.vishay.com

6

Document Number 83604

Rev. 1.3, 26-Apr-04

VISHAY

6N135/ 6N136

Vishay Semiconductors

Option 6

.407 (10.36)

.391 (9.96)

.307 (7.8)
.291 (7.4)

.014 (0.35)

.010 (0.25)
.400 (10.16)
.430 (10.92)

.028 (0.7)

MIN.

Option 7

.300 (7.62)

TYP.

.315 (8.0)

MIN.

.331 (8.4)

MIN.

.406 (10.3)

MAX.

.180 (4.6)
.160 (4.1)

.0040 (.102)
.0098 (.249)

Option 9

.375 (9.53)

.395 (10.03)

.300 (7.62)

ref.

.020 (.51)

.040 (1.02)

.315 (8.00)

min.

.012 (.30) typ.

15° max.

18450

Document Number 83604

Rev. 1.3, 26-Apr-04

www.vishay.com

7

6N135/ 6N136

VISHAY

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

www.vishay.com

8

Document Number 83604

Rev. 1.3, 26-Apr-04

This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.