Vishay 62CTQ030PBF Data Sheet
TO-220AB
PRODUCT SUMMARY
I
F(AV)
V
R
Base
common
Anode
2
cathode
2
Common
13
cathode
2 x 30 A
30 V
Schottky Rectifier,
2 x 30 A
FEATURES
• 150 °C TJ operation
• Center tap TO-220 package
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Anode
• Guard ring for enhanced ruggedness and long term
reliability
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C junction
temperature. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
62CTQ030PbF
Vishay High Power Products
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FRM
I
FSM
V
F
T
J
Rectangular waveform (per device) 60 A
30 V
TC = 120 °C (per leg) 60
tp = 5 µs sine 1500
30 Apk, TJ = 125 °C 0.44 V
Range - 65 to 150 °C
A
VOLTAGE RATINGS
PARAMETER SYMBOL 62CTQ030PbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
30 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
Peak repetitive forward current per leg I
Maximum peak one cycle non-repetitive
surge current per leg
Non-repetitive avalanche energy per leg E
Repetitive avalanche current per leg I
per leg
per device 60
I
F(AV)
FRM
I
FSM
AR
50 % duty cycle at TC = 120 °C, rectangular waveform
Rated VR, square wave, 20 kHz, TC = 127 °C 60
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 300
TJ = 25 °C, IAS = 3 A, L = 2.9 mH 13 mJ
AS
Current decaying linearly to zero in 1 µs
Frequency limited by T
maximum VA = 1.5 x VR typical
J
Following any rated load
condition and with rated
V
applied
RRM
30
A
1500
3A
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94242 For technical questions, contact: diodestech@vishay.com
Revision: 22-Jul-09 1
www.vishay.com
62CTQ030PbF
Vishay High Power Products
Schottky Rectifier,
2 x 30 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
30 A
60 A 0.56 0.6
Maximum forward voltage drop V
Maximum instantaneous reverse current I
Maximum junction capacitance C
Typical series inductance L
Maximum voltage rate of change dV/dt Rated V
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
FM
RM
(1)
30 A
60 A 0.54 0.59
TJ = 25 °C
T
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 3000 pF
T
Measured from top of terminal to mounting plane 8.0 nH
S
= 125 °C 180 350
R
T
= 25 °C
J
= 125 °C
T
J
Rated DC voltage
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
Marking device Case style TO-220AB 62CTQ030
minimum
maximum 12 (10)
J
Stg
R
DC operation 1.2
thJC
R
thCS
Mounting surface, smooth and greased 0.50
Non-lubricated threads
0.46 0.5
0.39 0.44
0.4 2.5
10 000 V/µs
- 65 to 150
- 65 to 175
2g
0.07 oz.
6 (5)
°C
°C/W
kgf · cm
(lbf · in)
V
mA
www.vishay.com For technical questions, contact: diodestech@vishay.com
2 Revision: 22-Jul-09
Document Number: 94242
62CTQ030PbF
Schottky Rectifier,
Vishay High Power Products
2 x 30 A
1000
100
TJ = 150 °C
T
= 125 °C
J
T
0.8
= 25 °C
J
1.0
1.2
1.4
10
- Instantaneous
F
I
Forward Current (A)
1
0
0.2
V
0.4
0.6
- Forward Voltage Drop (V)
FM
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
10 000
1000
TJ = 150 °C
100
10
1
0.1
- Reverse Current (mA)
R
0.01
I
0.001
0
1051520
V
- Reverse Voltage (V)
R
T
= 125 °C
J
= 100 °C
T
J
= 75 °C
T
J
T
J
TJ = 25 °C
25 30 30
Reverse Voltage
= 50 °C
40
45
TJ = 25 °C
- Junction Capacitance (pF)
T
C
1000
0
105 152025
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
0.1
0.01
- Thermal Impedance (°C/W)
thJC
Z
0.001
0.00001 0.0001 0.001 0.01 0.1
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
30
P
DM
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
1
t
1
t
2
1/t2
+ T
thJC
C
10
Document Number: 94242 For technical questions, contact: diodestech@vishay.com
www.vishay.com
Revision: 22-Jul-09 3
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