Vishay 60EPS..PbF High Voltage Series Data Sheet

60EPS..PbF High Voltage Series

Vishay High Power Products

Input Rectifier Diode, 60 A

Base

common

cathode

DESCRIPTION/FEATURES

The 60EPS..PbF rectifier High Voltage Series has
been optimized for very low forward voltage drop,

2

with moderate leakage. The glass passivation
technology used has reliable operation up to
150 °C junction temperature.

Typical applications are in input rectification and these
products are designed to be used with Vishay HPP switches
and output rectifiers which are available in identical package
outlines.

TO-247AC modified

13

Cathode

1

Anode

2

This product has been designed and qualified for industrial

PRODUCT SUMMARY

VF at 60 A 1.09 V

I

FSM

V

RRM

950 A

800 V/1200 V

level.

Compliant to RoHS directive 2002/95/EC.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

RRM

I

FSM

V

F

T

J

Sinusoidal waveform 60 A

800/1200 V

950 A

60 A, TJ = 25 °C 1.09 V

- 40 to 150 °C

VOLTAGE RATINGS

, MAXIMUM

V

RRM

PART NUMBER

60EPS08PbF 800 900

60EPS12PbF 1200 1300

PEAK REVERSE VOLTAGE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

I

RRM

AT 150 °C

mA

1

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current I

Maximum peak one cycle
non-repetitive surge current

Maximum I

Maximum I

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94345 For technical questions, contact: [e-mail]
Revision: 02-Oct-09 1

2

t for fusing I2t

2

√t for fusing I2√t t = 0.1 ms to 10 ms, no voltage reapplied 63 000 A2√s

F(AV)

I

FSM

TC = 118 °C, 180° conduction half sine wave 60

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied 1100

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied 6300

applied 950

RRM

applied 4512

RRM

A

2

A

s

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60EPS..PbF High Voltage Series

Vishay High Power Products

Input Rectifier Diode, 60 A

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage drop V

Forward slope resistance r

Threshold voltage V

Maximum reverse leakage current I

FM

t

F(TO)

RM

30 A, TJ = 25 °C 1.0 V

60 A, T

TJ = 150 °C

TJ = 25 °C

T

= 25 °C 1.09 V

J

3.96 mΩ

0.74 V

V

= Rated V

= 150 °C 1.0

J

R

RRM

0.1

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance,
unction to case

Maximum thermal resistance,
junction to ambient

Typical thermal resistance,
case to heatsink

Approximate weight

Mounting torque

minimum 6 (5)

maximum 12 (10)

Marking device Case style TO-247AC modified (JEDEC)

, T

T

J

Stg

DC operation 0.35

R

thJC

40

R

thJA

R

thCS

Mounting surface, smooth and greased 0.2

- 40 to 150 °C

6g

0.21 oz.

kgf · cm
(lbf · in)

60EPS08

60EPS12

mA

°C/W

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Document Number: 94345

2 Revision: 02-Oct-09

60EPS..PbF High Voltage Series

150

140

130

120

Temperature (°C)

110

Maximum Allowable Case

100

0

94345_01

30°

Average Forward Current (A)

Fig. 1 - Current Rating Characteristics

150

140

130

Temperature (°C)

120

30°

60EPS.. Series
R

60°

Maximum Allowable Case

110

0

20 80 10040 60

94345_02

Average Forward Current (A)

Fig. 2 - Current Rating Characteristics

60EPS.. Series

(DC) = 0.35 K/W

R

thJC

60°

(DC) = 0.35 K/W

thJC

Conduction period

90°

120°

Input Rectifier Diode, 60 A

Ø

Conduction angle

90°

120°

180°

70605040302010

Ø

DC

180°

Vishay High Power Products

110

100

90

80

70

60

50

40

Power Loss (W)

30

20

Maximum Average Forward

10

94345_04

1000

900

800

700

600

500

Forward Current (A)

Peak Half Sine Wave

400

300

94345_05

DC
180°
120°

90°

60°

30°

Conduction period

0

0

20 8010040 60

Average Forward Current (A)

Fig. 4 - Forward Power Loss Characteristics

At any rated load condition and with

rated V

60EPS.. Series

applied following surge.

RRM

Initial T
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

10 1001

Number of Equal Amplitude Half

Cycle Current Pulse (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

RMS limit

Ø

60EPS.. Series

= 150 °C

T

J

= 150 °C

J

90

80

70

60

50

40

30

Power Loss (W)

20

Maximum Average Forward

10

0

0

94345_03

Fig. 3 - Forward Power Loss Characteristics

180°
120°

90°
60°
30°

Conduction angle

60EPS.. Series
T

= 150 °C

J

10 20 60 7030 40 50

Average Forward Current (A)

RMS limit

Ø

1200

1000

800

600

Forward Current (A)

Peak Half Sine Wave

400

200

94345_06

Maximum non-repetitive surge current

versus pulse train duration.

Initial T

No voltage reapplied

Rated V

60EPS.. Series

Pulse Train Duration (s)

Fig. 6 - Maximum Non-Repetitive Surge Current

J

RRM

= 150 °C

reapplied

1.00.10.01

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Revision: 02-Oct-09 3

60EPS..PbF High Voltage Series

Vishay High Power Products

1000

100

10

Instantaneous Forward Current (A)

1

94345_07

1

Input Rectifier Diode, 60 A

TJ = 25 °C

TJ = 150 °C

60EPS.. Series

0 1.0 2.0 3.0 4.00.5 1.5 2.5 3.5 4.5

Instantaneous Forward Voltage (V)

Fig. 7 - Forward Voltage Drop Characteristics

Steady state value
(DC operation)

0.1

- Transient Thermal
Impedance (°C/W)

thJC

Z

0.01

0.0001 0.001 0.01 0.1 101

94345_08

Single pulse

Square Wave Pulse Duration (s)

Fig. 8 - Thermal Impedance Z

D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08

Characteristics

thJC

60EPS.. Series

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Document Number: 94345

4 Revision: 02-Oct-09

60EPS..PbF High Voltage Series

ORDERING INFORMATION TABLE

Device code

60 E P S 12 PbF

1

1 - Current rating (60 = 60 A)

2 - Circuit configuration:

3

- Package:

4 - Type of silicon:

5 - Voltage code x 100 = V

6 -

Input Rectifier Diode, 60 A

324

E = Single diode

P = TO-247AC modified

S = Standard recovery rectifier

None = Standard production

PbF = Lead (Pb)-free

5

RRM

6

Vishay High Power Products

08 = 800 V

12 = 1200 V

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95253

Part marking information www.vishay.com/doc?95255

Document Number: 94345 For technical questions, contact: [e-mail]
Revision: 02-Oct-09 5

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DIMENSIONS in millimeters and inches

E

E/2

(2)

(3)

(4)

(4)

(2) R/2

B

2 x R

S

D

See view B

2 x e

b4

3 x b

2 x b2

L

C

(5) L1

1

2

3

D

D

A

A2

A

A

A1

C

A

(6)

ΦP

(Datum B)

ΦP1

D1 (4)

4

E1

View A - A

Thermal pad

D2

DDE E

C

C

View B

(b1, b3, b5)

Base metal

c1

(b, b2, b4)

Section C - C, D - D, E - E

(c)

Planting

Lead assignments

Diodes

1. - Anode/open

2. - Cathode

3. - Anode

Outline Dimensions

Vishay Semiconductors

TO-247 modified

SYMBOL

Notes

(1)

Dimensioning and tolerance per ASME Y14.5M-1994

(2)

Contour of slot optional

(3)

Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body

(4)

Thermal pad contour optional with dimensions D1 and E1

(5)

Lead finish uncontrolled in L1

(6)

P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")

(7)

Outline conforms to JEDEC outline TO-247 with exception of dimension c

Document Number: 95253 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 31-Jan-11 [e-mail]

MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

A 4.65 5.31 0.183 0.209 D2 0.51 1.30 0.020 0.051
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3
A2 1.50 2.49 0.059 0.098 E1 13.72 - 0.540 -

b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC
b1 0.99 1.35 0.039 0.053 K 2.54 0.010

NOTES SYMBOL

MILLIMETERS INCHES

NOTES

b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634
b3 1.65 2.37 0.065 0.094 L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135 N 7.62 BSC 3
b5 2.59 3.38 0.102 0.133 P 3.56 3.66 0.14 0.144

c 0.38 0.86 0.015 0.034 P1 - 6.98 - 0.275
c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224

D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 1.78 0.216
D1 13.08 - 0.515 - 4 S 5.51 BSC 0.217 BSC

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Revision: 11-Mar-11 1