Vishay 60EPS16PbF High Voltage Series Data Sheet

60EPS16PbF High Voltage Series

Vishay High Power Products

Input Rectifier Diode, 60 A

Base

cathode

DESCRIPTION/FEATURES

The 60EPS16PbF rectifier High Voltage Series
has been optimized for very low forward

2

voltage drop, with moderate leakage. The
glass passivation technology used has reliable
operation up to 150 °C junction temperature.

Typical applications are in input rectification and these
products are designed to be used with Vishay HPP switches

TO-247AC modified

13

Cathode

Anode

and output rectifiers which are available in identical package
outlines.

PRODUCT SUMMARY

VF at 60 A 1.07 V

V

I

FSM

RRM

950 A

1600 V

This product has been designed and qualified for industrial
level and lead (Pb)-free.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

RRM

I

FSM

V

F

T

J

Sinusoidal waveform 60 A

1600 V

950 A

60 A, TJ = 25 °C 1.07 V

- 40 to 150 °C

Pb-free

Available

RoHS*

COMPLIANT

VOLTAGE RATINGS

PART NUMBER

60EPS16PbF 1600 1700 1

PEAK REVERSE VOLTAGE

V

, MAXIMUM

V

RRM

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

I

RRM

AT 150 °C

mA

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current I

Maximum peak one cycle
non-repetitive surge current

2

Maximum I

Maximum I

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94346 For technical questions, contact: [e-mail]
Revision: 25-Aug-08 1

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 63 000 A2√s

F(AV)

I

FSM

TC = 118 °C, 180° conduction half sine wave 60

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied 1100

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied 6300

applied 950

RRM

applied 4512

RRM

A

2

A

s

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60EPS16PbF High Voltage Series

Vishay High Power Products

Input Rectifier Diode, 60 A

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage drop V

Forward slope resistance r

Threshold voltage V

Maximum reverse leakage current I

F(TO)

RM

FM

30 A, TJ = 25 °C 1.0

60 A, T

= 25 °C 1.07

J

t

TJ = 150 °C

TJ = 25 °C

T

= 150 °C 1.0

J

V

= Rated V

R

3.96 mΩ

0.74 V

0.1

RRM

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage temperature range T

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
junction to ambient

Typical thermal resistance,
case to heatsink

Approximate weight

Mounting torque

minimum 6.0 (5)

maximum 12 (10)

Marking device Case style TO-247AC modified (JEDEC) 60EPS16

, T

J

Stg

R

DC operation 0.35

thJC

R

40

thJA

R

thCS

Mounting surface, smooth and greased 0.2

- 40 to 150 °C

6g

0.21 oz.

kgf · cm

(lbf · in)

V

mA

°C/W

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Document Number: 94346

2 Revision: 25-Aug-08

60EPS16PbF High Voltage Series

150

140

130

120

Temperature (°C)

110

Maximum Allowable Case

100

10 20

0

Average Forward Current (A)

Fig. 1 - Current Rating Characteristics

150

140

130

Temperature (°C)

120

30°

60°

90°

Maximum Allowable Case

110

0

20 40 60

Average Forward Current (A)

Fig. 2 - Current Rating Characteristics

60EPS.. Series
R

(DC) = 0.35 K/W

thJC

60°

30°

30 40 50

60EPS.. Series

(DC) = 0.35 K/W

R

thJC

Conduction period

120°

180°

Input Rectifier Diode, 60 A

Ø

Conduction angle

90°

120°

180°

60

70

Ø

DC

100

80

Vishay High Power Products

110

100

90

80

70

60

50

40

Power Loss (W)

30

20

Maximum Average Forward

10

0

1000

900

800

700

600

500

Forward Current (A)

Peak Half Sine Wave

400

300

DC
180°
120°

90°
60°
30°

RMS limit

Conduction period

60EPS.. Series
T

J

20

0

Average Forward Current (A)

40 60

Fig. 4 - Forward Power Loss Characteristics

At any rated load condition and with
rated V

60EPS.. Series

1

applied following surge.

RRM

Initial T
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

10

Number of Equal Amplitude Half

Cycle Current Pulse (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

Ø

= 150 °C

= 150 °C

J

80

100

100

90

80

70

60

50

40

30

Power Loss (W)

20

Maximum Average Forward

10

0

180°
120°

90°
60°
30°

RMS limit

0

2010 30 40 50 60

Average Forward Current (A)

Fig. 3 - Forward Power Loss Characteristics

Ø

Conduction angle

60EPS.. Series
T

= 150 °C

J

70

1200

1000

800

600

Forward Current (A)

Peak Half Sine Wave

400

200

Maximum non-repetitive surge current
versus pulse train duration.

Initial T
No voltage reapplied
Rated V

60EPS.. Series

Pulse Train Duration (s)

Fig. 6 - Maximum Non-Repetitive Surge Current

= 150 °C

J

reapplied

RRM

10.01 0.1

Document Number: 94346 For technical questions, contact: [e-mail]

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Revision: 25-Aug-08 3

60EPS16PbF High Voltage Series

Vishay High Power Products

1000

100

10

Instantaneous Forward Current (A)

1

1

Input Rectifier Diode, 60 A

TJ = 25 °C

TJ = 150 °C

60EPS.. Series

0

1.00.5 1.5 2.0

Instantaneous Forward Voltage (V)

2.5 3.0 3.5

Fig. 7 - Forward Voltage Drop Characteristics

4.0

4.5

Steady state value
(DC operation)

0.1

D = 0.50
D = 0.33

- Transient Thermal
Impedance (°C/W)

thJC

Z

0.01

0.0001 0.001 0.01 0.1 1

Single pulse

D = 0.25
D = 0.17
D = 0.08

Square Wave Pulse Duration (s)

Fig. 8 - Thermal Impedance Z

Characteristics

thJC

60EPS.. Series

10

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Document Number: 94346

4 Revision: 25-Aug-08

60EPS16PbF High Voltage Series

ORDERING INFORMATION TABLE

Device code

60 E P S 16 PbF

1 - Current rating (60 = 60 A)

2 - Circuit configuration:

3 - Package:

4 - Type of silicon:

5 - Voltage rating (16 = 1600 V)

6

Input Rectifier Diode, 60 A

51324

E = Single diode

P = TO-247AC modified

S = Standard recovery rectifier

- None = Standard production

PbF = Lead (Pb)-free

Vishay High Power Products

6

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95253

Part marking information http://www.vishay.com/doc?95255

Document Number: 94346 For technical questions, contact: [e-mail]
Revision: 25-Aug-08 5

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DIMENSIONS in millimeters and inches

E

E/2

(2)

(3)

(4)

(4)

(2) R/2

B

2 x R

S

D

See view B

2 x e

b4

3 x b

2 x b2

L

C

(5) L1

1

2

3

D

D

A

A2

A

A

A1

C

A

(6)

ΦP

(Datum B)

ΦP1

D1 (4)

4

E1

View A - A

Thermal pad

D2

DDE E

C

C

View B

(b1, b3, b5)

Base metal

c1

(b, b2, b4)

Section C - C, D - D, E - E

(c)

Planting

Lead assignments

Diodes

1. - Anode/open

2. - Cathode

3. - Anode

Outline Dimensions

Vishay Semiconductors

TO-247 modified

SYMBOL

Notes

(1)

Dimensioning and tolerance per ASME Y14.5M-1994

(2)

Contour of slot optional

(3)

Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body

(4)

Thermal pad contour optional with dimensions D1 and E1

(5)

Lead finish uncontrolled in L1

(6)

P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")

(7)

Outline conforms to JEDEC outline TO-247 with exception of dimension c

Document Number: 95253 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 31-Jan-11 [e-mail]

MILLIMETERS INCHES

MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

A 4.65 5.31 0.183 0.209 D2 0.51 1.30 0.020 0.051
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3
A2 1.50 2.49 0.059 0.098 E1 13.72 - 0.540 -

b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC
b1 0.99 1.35 0.039 0.053 K 2.54 0.010

NOTES SYMBOL

MILLIMETERS INCHES

NOTES

b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634
b3 1.65 2.37 0.065 0.094 L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135 N 7.62 BSC 3
b5 2.59 3.38 0.102 0.133 P 3.56 3.66 0.14 0.144

c 0.38 0.86 0.015 0.034 P1 - 6.98 - 0.275
c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224

D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 1.78 0.216
D1 13.08 - 0.515 - 4 S 5.51 BSC 0.217 BSC

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