Vishay 60CPT045 Data Sheet

Schottky Generation 5.0, 2 x 30 A
Anode
TO-2 47 AC
PRODUCT SUMMARY
I
F(AV)
V
R
V
at 30 A at 125 °C 0.50 V
F
High Performance
Base
common
2
cathode
Anode
2
Common
13
cathode
2 x 30 A
45 V
60CPT045
Vishay High Power Products
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized V
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Full lead (Pb)-free and RoHS compliant devices
• Designed and qualified for industrial level
APPLICATIONS
• High efficiency SMPS
• Automotive
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• Dc-to-dc systems
• Increased power density systems
vs. IR trade off for high efficiency
F
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
V
V
T
RRM
F
J
30 Apk, TJ = 125 °C (typical, per leg) 0.46
Range - 55 to 175 °C
45
V
VOLTAGE RATINGS
PARAMETER SYMBOL TEST CONDITIONS 60CPT045 UNITS
Maximum DC reverse voltage V
TJ = 25 °C 45 V
R
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
Maximum peak one cycle non-repetitive surge current
Non-repetitive avalanche energy E
Repetitive avalanche current I
per leg
per device 60
I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 159 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 450
TJ = 25 °C, IAS = 8 A, L = 4.4 mH 140 mJ
AS
Limited by frequency of operation and time pulse duration so
< TJ max. IAS at TJ max. as a function of time pulse
that T
J
See fig. 8
Following any rated load condition and with rated V
applied
RRM
2500
I
T
J
30
at
AS
max.
A
A
Document Number: 94571 For technical questions, contact: diodes-tech@vishay.com Revision: 07-Oct-08 1
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60CPT045
Vishay High Power Products
High Performance
Schottky Generation 5.0,
2 x 30 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
30 A
60 A - 0.67
RM
FM
(1)
30 A
60 A - 0.65
TJ = 25 °C
(1)
T
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 3500 - pF
T
Measured lead to lead 5 mm from package body 7.5 - nH
S
Forward voltage drop per leg V
Reverse leakage current per leg I
Junction capacitance per leg C
Series inductance per leg L
Maximum voltage rate of change dV/dt Rated V
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
= 125 °C - 20 mA
R
T
= 25 °C
J
= 125 °C
T
J
V
= Rated VR
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range
Maximum thermal resistance, junction to case per leg
Maximum thermal resistance, junction to case per device
Typical thermal resistance, case to heatsink
Approximate weight
Mounting torque
Marking device Case style TO-247AC (TO-3P) 60CPT045
minimum 6 (5)
maximum 12 (10)
, T
T
J
Stg
R
DC operation
thJC
R
thCS
Mounting surface, smooth and greased 0.25
-0.58
-0.50
- 250 µA
- 10 000 V/µs
- 55 to 175 °C
0.8
0.4
6g
0.21 oz.
°C/W
kgf · cm
(lbf · in)
V
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Document Number: 94571
60CPT045
100
(A)
F
Tj = 175°C
10
Instantaneous Forward Current - I
Tj = 125°C
High Performance
Schottky Generation 5.0,
2 x 30 A
(mA)
R
Reverse Current - I
0.001
0.0001
10000
(pF)
T
Vishay High Power Products
1000
100
10
0.1
0.01
175°C
150°C
125°C
1
0 5 10 15 20 25 30 35 40 45
100°C
75°C
50°C
25°C
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Tj = 25°C
1
0.0 0.2 0.4 0.6 0.8 1.0
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10
thJC (°C/W)
1
D = 0.75
D = 0.5
D = 0.33
D = 0.25
0.1 D = 0.2
Thermal Impedance Z
0.01 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00
Fig. 4 - Maximum Thermal Impedance Z
(Thermal Resistance)
t1, Rectangular Pulse Duration (Seconds)
Single Pulse
1000
Junction Capacitance - C
100
0 5 10 15 20 25 30 35 40 45
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Characteristics
thJC
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Revision: 07-Oct-08 3
60CPT045
Vishay High Power Products
180
175
170
165
160
155
Square wave (D=0.50) 80% rated Vr applied
150
Allowable Case Temperature (°C)
see note (1)
145
0 5 10 15 20 25 30 35 40 45
Average Forward Current - I
F
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
(A)
FSM
High Performance
Schottky Generation 5.0,
2 x 30 A
DC
(A)
(AV)
10000
30
180° 120°
25
20
15
10
Average Power Loss - (Watts)
90° 60° 30°
RMS Limit
5
0
0 5 10 15 20 25 30 35 40 45
Average Forward Current - I
Fig. 6 - Forward Power Loss Characteristics
DC
F
(A)
(AV)
Note
(1)
Formula used: TC = TJ - (Pd + Pd Pd = Forward power loss = I Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V
REV
F(AV)
) x R
REV
x VFM at (I
1000
Non-Repetitive Surge Current - I
100
10 100 1000 10000
Square Wave Pulse Duration - tp(microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current
;
thJC
/D) (see fig. 6);
F(AV)
R
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Document Number: 94571
4 Revision: 07-Oct-08
60CPT045
High Performance
Vishay High Power Products
Schottky Generation 5.0,
2 x 30 A
1000
100
10
Avalanche Current (A)
1
Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration)
1000
Tj = 125°C
Tj = 175°C
Rectangular Pulse Duration ( μsec)
Tj = 25°C
001011
100
Tj = 25°C
10
Avalanche Energy (mJ)
1
Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration)
Tj = 125°C
Tj = 175°C
001011
Rectangular Pulse Duration ( μsec)
Document Number: 94571 For technical questions, contact: diodes-tech@vishay.com Revision: 07-Oct-08 5
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60CPT045
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
Tube standard pack quantity: 25 pieces
High Performance
Schottky Generation 5.0,
2 x 30 A
60 C P T 045
1 - Current rating (60 A)
- Circuit configuration:
2
C = Common cathode
- Package:
3
P = TO-247
4 - T = Trench
5 - Voltage code (45 V)
51324
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95223
Part marking information http://www.vishay.com/doc?95226
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Document Number: 94571
DIMENSIONS in millimeters and inches
0.10 AC
MM
E
E/2
(2)
(3)
(4)
(4)
(2) R/2
B
2 x R
S
D
See view B
2 x e
b4
3 x b
2 x b2
L
C
(5) L1
1
2
3
D
D
A
A2
A
A
A1
C
Ø K BD
MM
A
(6)
Ø P
(Datum B)
FP1
D1 (4)
4
E1
0.01 BD
MM
View A - A
Thermal pad
D2
DDE E
C
C
View B
(b1, b3, b5)
Base metal
c1
(b, b2, b4)
Section C - C, D - D, E - E
(c)
Planting
Lead assignments
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
Outline Dimensions
Vishay Semiconductors
TO-247
SYMBOL
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5M-1994
(2)
Contour of slot optional
(3)
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body
(4)
Thermal pad contour optional with dimensions D1 and E1
(5)
Lead finish uncontrolled in L1
(6)
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7)
Outline conforms to JEDEC outline TO-247 with exception of dimension c
Document Number: 95223 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 01-Dec-10 DiodesAmericas@vishay.com
MILLIMETERS INCHES MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
NOTES SYMBOL
MILLIMETERS INCHES
NOTES
A 4.65 5.31 0.183 0.209 D2 0.51 1.30 0.020 0.051 A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3 A2 1.50 2.49 0.059 0.098 E1 13.72 - 0.540 -
b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC b1 0.99 1.35 0.039 0.053 FK 2.54 0.010 b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 L1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 N 7.62 BSC 3 b5 2.59 3.38 0.102 0.133 FP 3.56 3.66 0.14 0.144
c 0.38 0.86 0.015 0.034 FP1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224
D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 1.78 0.216 D1 13.08 - 0.515 - 4 S 5.51 BSC 0.217 BSC
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