60EPU04PbF/60APU04PbF
Vishay High Power Products
Ultrafast Soft Recovery Diode,
60 A FRED Pt
TM
60EPU04PbF
Cathode
to base
2
Anode
3
1
Cathode
TO247AC modified
PRODUCT SUMMARY
t
rr
I
F(AV)
V
R
60APU04PbF
Cathode
to base
2
1
Anode Anode
TO-247AC
50 ns
60 A
400 V
3
FEATURES
• Ultrafast recovery
• 175 °C operating junction temperature
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for industrial level
Pb-free
Available
RoHS*
COMPLIANT
BENEFITS
• Reduced RFI and EMI
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI
in high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Continuous forward current I
Maximum repetitive forward current I
Operating junction and storage temperatures T
J
R
F(AV)
FSM
FRM
, T
TC = 127 °C 60
TC = 25 °C 600
Square wave, 20 kHz 120
Stg
400 V
ASingle pulse forward current I
- 55 to 175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
,
V
BR
V
R
IR = 100 µA 400 - -
R
IF = 60 A - 1.05 1.25
I
F
T
S
= 60 A, TJ = 175 °C - 0.87 1.03
F
I
= 60 A, TJ = 125 °C - 0.93 1.10
F
VR = VR rated - - 50 µA
= 150 °C, VR = VR rated - - 2 mA
T
J
VR = 400 V - 50 - pF
Measured lead to lead 5 mm from package body - 3.5 - nH
V
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94022 For technical questions, contact: diodes-tech@vishay.com
Revision: 07-Apr-08 1
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60EPU04PbF/60APU04PbF
Vishay High Power Products
Ultrafast Soft Recovery Diode,
60 A FRED Pt
TM
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1 A, dIF/dt = 200 A/µs, VR = 30 V - 50 60
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
= 25 °C
J
T
= 125 °C - 145 -
J
TJ = 25 °C - 8.8 -
T
= 125 °C - 15.4 -
J
rr
TJ = 25 °C - 375 -
T
= 125 °C - 1120 -
J
= 60 A
I
F
/dt = 200 A/µs
dI
F
V
= 200 V
R
-85-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Thermal resistance,
junction to case
Thermal resistance,
case to heatsink
Weight
Mounting torque
R
--0.70
thJC
R
thCS
Mounting surface, flat, smooth
and greased
-0.2-
-5.5- g
-0.2-oz.
1.2
(10)
-
2.4
(20)
(lbf · in)
nsT
A
nC
K/W
N · m
Marking device
Case style TO-247AC modified 60EPU04
Case style TO-247AC 60APU04
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2 Revision: 07-Apr-08
Document Number: 94022
60EPU04PbF/60APU04PbF
1000
100
10
- Instantaneous
F
I
Forward Current (A)
1
0 2.51.5
Ultrafast Soft Recovery Diode,
TJ = 175 °C
= 125 °C
T
J
= 25 °C
T
J
0.5 2
VF - Forward Voltage Drop (V)
1
60 A FRED Pt
TM
- Reverse Current (µA)
R
I
Vishay High Power Products
1000
100
10
1
0.1
0.01
0.001
0 200
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
100
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
TJ = 25 °C
400300
100
- Junction Capacitance (pF)
T
C
10
0 100 1000
10
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
0.1
- Thermal Impedance (°C/W)
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1
Single pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
P
DM
t
1
t
2
.
1/t2
+ T
thJC
C
.
10
Document Number: 94022 For technical questions, contact: diodes-tech@vishay.com
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Revision: 07-Apr-08 3
60EPU04PbF/60APU04PbF
Vishay High Power Products
180
160
DC
140
Square wave (D = 0.50)
80 % rated V
120
100
Allowable Case Temperature (°C)
See note (1)
80
0204060
I
F(AV)
Fig. 5 - Maximum Allowable Case Temperature vs.
100
80
60
40
20
Average Power Loss (W)
applied
R
- Average Forward Current (A)
Average Forward Current
RMS limit
DC
Ultrafast Soft Recovery Diode,
60 A FRED Pt
80 100
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
TM
(ns)
rr
t
(nC)
rr
Q
200
180
160
140
120
100
3500
3000
2500
2000
1500
1000
500
VR = 400 V
= 125 °C
T
J
= 25 °C
T
J
80
60
100 1000
IF = 120 A
= 60 A
I
F
= 40 A
I
F
dIF/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
VR = 400 V
= 125 °C
T
J
= 25 °C
T
J
IF = 40 A
= 60 A
I
F
= 120 A
I
F
0
20
0406080 100
I
- Average Forward Current (A)
F(AV)
Fig. 6 - Forward Power Loss Characteristics
0
100 1000
dIF/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI
/dt
F
Note
(1)
Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V
REV
F(AV)
) x R
REV
x VFM at (I
thJC
;
F(AV)
/D) (see fig. 6);
R
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94022
4 Revision: 07-Apr-08
60EPU04PbF/60APU04PbF
Ultrafast Soft Recovery Diode,
V
= 200 V
R
TM
60 A FRED Pt
Vishay High Power Products
0.01 Ω
L = 70 µH
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
t
I
F
0
rr
t
a
t
b
dIF/dt
(1)
/dt - rate of change of current
(1) dI
F
through zero crossing
(2) I
- peak reverse recovery current
RRM
- reverse recovery time measured
(3) t
rr
from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.
to point where a line passing
F
and 0.50 I
RRM
RRM
Fig. 10 - Reverse Recovery Waveform and Definitions
(2)
I
RRM
(4) Q
and I
(5) dI
current during t
(4)
Q
rr
0.5 I
RRM
(rec)M
Q
=
rr
(5)
/dt
trr x I
RRM
2
portion of t
b
rr
dI
0.75 I
RRM
- area under curve defined by t
rr
RRM
/dt - peak rate of change of
(rec)M
rr
Document Number: 94022 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 07-Apr-08 5
60EPU04PbF/60APU04PbF
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
60 E P U 04 PbF
1 - Current rating (60 = 60 A)
2 - Circuit configuration:
3
4
5
6 -
Ultrafast Soft Recovery Diode,
60 A FRED Pt
E = Single diode
A = Single diode, 3 pins
- Package:
P = TO-247AC (modified)
- Type of silicon:
U = Ultrafast recovery
- Voltage rating (04 = 400 V)
None = Standard production
PbF = Lead (Pb)-free
TM
51324
6
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95001
Part marking information http://www.vishay.com/doc?95006
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
6 Revision: 07-Apr-08
Document Number: 94022
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
®
, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN
®
Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1
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