Vishay 60APU02PbF User Manual

60EPU02PbF/60APU02PbF
Ultrafast Soft Recovery Diode,
60 A FRED Pt
TM
60EPU02PbF
Base
common
cathode
2
Anode
3
1
Cathode
TO-247AC modified
PRODUCT SUMMARY
t
rr
I
F(AV)
V
R
60APU02PbF
Base
common
cathode
Anode
1
TO-247AC
35 ns
60 A
200 V
2
Anode
3
FEATURES
• Ultrafast recovery
• 175 °C operating junction temperature
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for industrial level
Pb-free
Available
RoHS*
COMPLIANT
BENEFITS
• Reduced RFI and EMI
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Continuous forward current I
Maximum repetitive forward current I
Operating junction and storage temperatures T
J
R
F(AV)
FSM
FRM
, T
TC = 127 °C 60
TC = 25 °C 800
Square wave, 20 kHz 120
Stg
200 V
ASingle pulse forward current I
- 55 to 175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage, blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
V
,
BR
V
R
IR = 100 µA 200 - -
R
IF = 60 A - 0.98 1.08
F
T
S
= 60 A, TJ = 175 °C - 0.81 0.88
I
F
VR = VR rated - - 50 µA
T
= 150 °C, VR = VR rated - - 2 mA
J
VR = 200 V - 87 - pF
Measured lead to lead 5 mm from package body - 8.0 - nH
V
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94021 For technical questions, contact: diodes-tech@vishay.com Revision: 07-Apr-08 1
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60EPU02PbF/60APU02PbF
Vishay High Power Products
Ultrafast Soft Recovery Diode,
60 A FRED Pt
TM
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - - 35
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
= 25 °C
J
T
= 125 °C - 50 -
J
TJ = 25 °C - 4 -
T
= 125 °C - 8 -
J
rr
TJ = 25 °C - 59 -
T
= 125 °C - 220 -
J
= 60 A
I
F
/dt = 200 A/µs
dI
F
V
= 160 V
R
-28-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Thermal resistance, junction to case
Thermal resistance, case to heatsink
Weight
Mounting torque --1.2N ⋅ m
Marking device
R
- - 0.70
thJC
R
thCS
Mounting surface, flat, smooth and greased
Case style TO-247AC modified 60EPU02
Case style TO-247AC 60APU02
-0.2-
-5.5- g
-0.2-oz.
nsT
A
nC
K/W
www.vishay.com For technical questions, contact: diodes-tech@vishay.com 2 Revision: 07-Apr-08
Document Number: 94021
60EPU02PbF/60APU02PbF
1000
100
10
- Instantaneous
F
I
Forward Current (A)
1
0 2.51.5
Ultrafast Soft Recovery Diode,
TJ = 175 °C
= 150 °C
T
J
= 25 °C
T
J
0.5 2
VF - Forward Voltage Drop (V)
1
60 A FRED Pt
TM
- Reverse Current (µA)
R
I
Vishay High Power Products
1000
100
10
1
0.1
0.01
0.001 0 100
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
50
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10 000
200150
1000
TJ = 25 °C
100
- Junction Capacitance (pF)
T
C
10
0 100 1000
10
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
0.1
D = 0.50 D = 0.20 D = 0.10
- Thermal Impedance (°C/W)
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1
Single pulse
(thermal resistance)
D = 0.05 D = 0.02 D = 0.01
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
P
DM
t
1
t
2
.
1/t2
+ T
thJC
C
.
10
Document Number: 94021 For technical questions, contact: diodes-tech@vishay.com
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Revision: 07-Apr-08 3
60EPU02PbF/60APU02PbF
Vishay High Power Products
180
170
160
applied
R
DC
RMS limit
150
140
Square wave (D = 0.50)
130
80 % rated V
120
110
Allowable Case Temperature (°C)
See note (1)
100
0204060
I
- Average Forward Current (A)
F(AV)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
100
80
60
40
20
Average Power Loss (W)
0
0406080 100
I
DC
20
- Average Forward Current (A)
F(AV)
Fig. 6 - Forward Power Loss Characteristics
Ultrafast Soft Recovery Diode,
60 A FRED Pt
80 100
D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50
TM
(ns)
rr
t
(nC)
rr
Q
800
700
600
500
400
300
200
100
70
60
50
40
30
20
VR = 160 V
10
T
= 125 °C
J
T
= 25 °C
J
0
100 1000
IF = 90 A
= 60 A
I
F
= 30 A
I
F
dIF/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
VR = 160 V
= 125 °C
T
J
= 25 °C
T
J
IF = 30 A
= 60 A
I
F
= 90 A
I
F
0
100 1000
dIF/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI
/dt
F
Note
(1)
Formula used: TC = TJ - (Pd + Pd Pd = Forward power loss = I Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V
REV
F(AV)
) x R
REV
x VFM at (I
thJC
;
F(AV)
/D) (see fig. 6);
R
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Document Number: 94021
4 Revision: 07-Apr-08
60EPU02PbF/60APU02PbF
Ultrafast Soft Recovery Diode,
V
= 200 V
R
TM
60 A FRED Pt
Vishay High Power Products
0.01 Ω
L = 70 µH
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
t
I
F
0
rr
t
a
t
b
dIF/dt
(1)
/dt - rate of change of current
(1) dI
F
through zero crossing
- peak reverse recovery current
(2) I
RRM
- reverse recovery time measured
(3) t
rr
from zero crossing point of negative going I through 0.75 I extrapolated to zero current.
to point where a line passing
F
and 0.50 I
RRM
RRM
Fig. 10 - Reverse Recovery Waveform and Definitions
(2)
I
RRM
(4) Q and I
(5) dI current during t
(4)
Q
rr
0.5 I
RRM
(rec)M
Q
=
rr
(5)
/dt
trr x I
RRM
2
portion of t
b
rr
dI
0.75 I
RRM
- area under curve defined by t
rr
RRM
/dt - peak rate of change of
(rec)M
rr
Document Number: 94021 For technical questions, contact: diodes-tech@vishay.com
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Revision: 07-Apr-08 5
60EPU02PbF/60APU02PbF
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
60 E P U 02 PbF
1 - Current rating (60 = 60 A)
2
3
4 - Type of silicon:
5 - Voltage rating (02 = 200 V)
6 -
Ultrafast Soft Recovery Diode,
60 A FRED Pt
- Circuit configuration:
E = Single diode
A = Single diode, 3 pins
- Package:
P = TO-247AC (modified)
U = Ultrafast recovery
None = Standard production
PbF = Lead (Pb)-free
TM
51324
6
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95001
Part marking information http://www.vishay.com/doc?95006
www.vishay.com For technical questions, contact: diodes-tech@vishay.com 6 Revision: 07-Apr-08
Document Number: 94021
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product names noted herein may be trademarks of their respective owners.
®
, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN
®
Document Number: 99901 www.vishay.com Revision: 12-Mar-07 1
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