Vishay 60APU02PbF User Manual

60EPU02PbF/60APU02PbF
Ultrafast Soft Recovery Diode,
60 A FRED Pt
TM
60EPU02PbF
Base
common
cathode
2
Anode
3
1
Cathode
TO-247AC modified
PRODUCT SUMMARY
t
rr
I
F(AV)
V
R
60APU02PbF
Base
common
cathode
Anode
1
TO-247AC
35 ns
60 A
200 V
2
Anode
3
FEATURES
• Ultrafast recovery
• 175 °C operating junction temperature
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for industrial level
Pb-free
Available
RoHS*
COMPLIANT
BENEFITS
• Reduced RFI and EMI
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Continuous forward current I
Maximum repetitive forward current I
Operating junction and storage temperatures T
J
R
F(AV)
FSM
FRM
, T
TC = 127 °C 60
TC = 25 °C 800
Square wave, 20 kHz 120
Stg
200 V
ASingle pulse forward current I
- 55 to 175 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage, blocking voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
Series inductance L
V
,
BR
V
R
IR = 100 µA 200 - -
R
IF = 60 A - 0.98 1.08
F
T
S
= 60 A, TJ = 175 °C - 0.81 0.88
I
F
VR = VR rated - - 50 µA
T
= 150 °C, VR = VR rated - - 2 mA
J
VR = 200 V - 87 - pF
Measured lead to lead 5 mm from package body - 8.0 - nH
V
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94021 For technical questions, contact: diodes-tech@vishay.com Revision: 07-Apr-08 1
www.vishay.com
60EPU02PbF/60APU02PbF
Vishay High Power Products
Ultrafast Soft Recovery Diode,
60 A FRED Pt
TM
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - - 35
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
= 25 °C
J
T
= 125 °C - 50 -
J
TJ = 25 °C - 4 -
T
= 125 °C - 8 -
J
rr
TJ = 25 °C - 59 -
T
= 125 °C - 220 -
J
= 60 A
I
F
/dt = 200 A/µs
dI
F
V
= 160 V
R
-28-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Thermal resistance, junction to case
Thermal resistance, case to heatsink
Weight
Mounting torque --1.2N ⋅ m
Marking device
R
- - 0.70
thJC
R
thCS
Mounting surface, flat, smooth and greased
Case style TO-247AC modified 60EPU02
Case style TO-247AC 60APU02
-0.2-
-5.5- g
-0.2-oz.
nsT
A
nC
K/W
www.vishay.com For technical questions, contact: diodes-tech@vishay.com 2 Revision: 07-Apr-08
Document Number: 94021
60EPU02PbF/60APU02PbF
1000
100
10
- Instantaneous
F
I
Forward Current (A)
1
0 2.51.5
Ultrafast Soft Recovery Diode,
TJ = 175 °C
= 150 °C
T
J
= 25 °C
T
J
0.5 2
VF - Forward Voltage Drop (V)
1
60 A FRED Pt
TM
- Reverse Current (µA)
R
I
Vishay High Power Products
1000
100
10
1
0.1
0.01
0.001 0 100
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
50
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10 000
200150
1000
TJ = 25 °C
100
- Junction Capacitance (pF)
T
C
10
0 100 1000
10
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
0.1
D = 0.50 D = 0.20 D = 0.10
- Thermal Impedance (°C/W)
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1
Single pulse
(thermal resistance)
D = 0.05 D = 0.02 D = 0.01
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
P
DM
t
1
t
2
.
1/t2
+ T
thJC
C
.
10
Document Number: 94021 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 07-Apr-08 3
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