Vishay 40MT120UHAPbF, 40MT120UHTAPbF Data Sheet

40MT120UHAPbF, 40MT120UHTAPbF

Vishay High Power Products

"Half Bridge" IGBT MTP (Ultrafast NPT IGBT), 80 A

MTP

PRODUCT SUMMARY

VCES	1200 V
VCE(on) typical at VGE = 15 V	3.36 V
IC at TC = 25 °C	80 A

FEATURES

• Ultrafast Non Punch Through (NPT) technology

• Positive VCE(on) temperature coefficient

• 10 μs short circuit capability

•Square RBSOA

•HEXFRED® antiparallel diodes with ultrasoft reverse recovery and low VF

•Al2O3 DBC

•Optional SMD thermistor (NTC)

•Very low stray inductance design for high speed operation

•UL approved file E78996

•Speed 8 kHz to 60 kHz

•Compliant to RoHS directive 2002/95/EC

•Designed and qualified for industrial level

BENEFITS

•Optimized for welding, UPS and SMPS applications

•Rugged with ultrafast performance

•Benchmark efficiency above 20 kHz

•Outstanding ZVS and hard switching operation

•Low EMI, requires less snubbing

•Excellent current sharing in parallel operation

•Direct mounting to heatsink

•PCB solderable terminals

•Very low junction to case thermal resistance

ABSOLUTE MAXIMUM RATINGS
PARAMETER		SYMBOL	TEST CONDITIONS		MAX.	UNITS
Collector to emitter breakdown voltage		VCES			1200	V
Continuous collector current		IC	TC = 25 °C		80
			TC = 104 °C		40
Pulsed collector current		ICM			160	A
Clamped inductive load current		ILM			160
Diode continuous forward current		IF	TC = 105 °C		21
Diode maximum forward current		IFM			160
Gate to emitter voltage		VGE			± 20	V
RMS isolation voltage		VISOL	Any terminal to case, t = 1 min		2500
Maximum power dissipation (only IGBT)		PD	TC = 25 °C		463	W
			TC = 100 °C		185
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94507	For technical questions, contact: [e-mail]					www.vishay.com
Revision: 01-Mar-10						1

40MT120UHAPbF, 40MT120UHTAPbF

Vishay High Power Products		"Half Bridge" IGBT MTP
	(Ultrafast NPT IGBT), 80 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER	SYMBOL		TEST CONDITIONS	MIN.	TYP.		MAX.	UNITS
Collector to emitter	V(BR)CES		VGE = 0 V, IC = 250 μA	1200	-		-	V
breakdown voltage
Temperature coefficient of	V(BR)CES/	TJ	VGE = 0 V, IC = 3 mA (25 °C to 125 °C)	-	+ 1.1		-	V/°C
breakdown voltage
			VGE = 15 V, IC = 40 A	-	3.36		3.59
Collector to emitter saturation voltage	VCE(on)		VGE = 15 V, IC = 80 A	-	4.53		4.91
			VGE = 15 V, IC = 40 A, TJ = 150 °C	-	3.88		4.10	V
			VGE = 15 V, IC = 80 A, TJ = 150 °C	-	5.35		5.68
Gate threshold voltage	VGE(th)		VCE = VGE, IC = 500 μA	4	-		6
Temperature coefficient of	VGE(th)/ TJ		VCE = VGE, IC = 1 mA (25 °C to 125 °C)	-	- 12		-	mV/°C
threshold voltage
Transconductance	gfe		VCE = 50 V, IC = 40 A, PW = 80 μs	-	35		-	S
			VGE = 0 V, VCE = 1200 V, TJ = 25 °C	-	-		250	μA
Zero gate voltage collector current	ICES		VGE = 0 V, VCE = 1200 V, TJ = 125 °C	-	0.4		1.0	mA
			VGE = 0 V, VCE = 1200 V, TJ = 150 °C	-	0.2		10
Gate to emitter leakage current	IGES		VGE = ± 20 V	-	-		± 250	nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER	SYMBOL		TEST CONDITIONS	MIN.	TYP.		MAX.	UNITS
Total gate charge (turn-on)	Qg		IC = 40 A	-	399		599
Gate to emitter charge (turn-on)	Qge		VCC = 600 V	-	43		65	nC
			VGE = 15 V
Gate to collector charge (turn-on)	Qgc			-	187		281
Turn-on switching loss	Eon		VCC = 600 V, IC = 40 A, VGE = 15 V,	-	1.14		1.71
			Rg = 5 Ω, L = 200 μH, TJ = 25 °C,
Turn-off switching loss	Eoff			-	1.35		2.02
			energy losses include tail and diode
Total switching loss	Etot		reverse recovery	-	2.49		3.73	mJ
Turn-on switching loss	Eon		VCC = 600 V, IC = 40 A, VGE = 15 V,	-	1.60		2.40
			Rg = 5 Ω, L = 200 μH, TJ = 125 °C,
Turn-off switching loss	Eoff			-	1.62		2.43
			energy losses include tail and diode
Total switching loss	Etot			-	3.22		4.82
			reverse recovery
Input capacitance	Cies		VGE = 0 V	-	5521		8282
Output capacitance	Coes		VCC = 30 V	-	380		570	pF
			f = 1.0 MHz
Reverse transfer capacitance	Cres			-	171		257
			TJ = 150 °C, IC = 160 A
Reverse bias safe operating area	RBSOA		VCC = 1000 V, Vp = 1200 V		Fullsquare
			Rg = 5 Ω, VGE = + 15 V to 0 V
			TJ = 150 °C,
Short circuit safe operating area	SCSOA		VCC = 900 V, Vp = 1200 V	10	-		-	μs
			Rg = 5 Ω, VGE = + 15 V to 0 V

www.vishay.com	For technical questions, contact: [e-mail]	Document Number: 94507
2		Revision: 01-Mar-10

40MT120UHAPbF, 40MT120UHTAPbF

"Half Bridge" IGBT MTP Vishay High Power Products

(Ultrafast NPT IGBT), 80 A

DIODE SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

IC = 40 A

-

2.98

3.38

IC = 80 A

-

3.90

4.41

Diode forward voltage drop

VFM

IC = 40 A, TJ = 125 °C

-

3.08

3.39

V

IC = 80 A, TJ = 125 °C

-

4.29

4.72

IC = 40 A, TJ = 150 °C

-

3.12

3.42

Reverse recovery energy of the diode

Erec

VGE = 15 V, Rg = 5 Ω, L = 200 μH

-

574

861

μJ

Diode reverse recovery time

trr

VCC = 600 V, IC = 40 A

-

120

180

ns

TJ = 125 °C

Peak reverse recovery current

Irr

-

43

65

A

THERMISTOR SPECIFICATIONS (40MT120UHTAPbF only)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Resistance

R0 (1)

T0 = 25 °C

-

30

-

kΩ

Sensitivity index of the

β (1)(2)

T0 = 25 °C

-

4000

-

K

thermistor material

T1 = 85 °C

Notes

(1)

T0, T1 are thermistor´s temperatures

(2)

R0

β

1

1

, temperature in Kelvin

------ = exp

------

– ------

R

T

T

1

0

1

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Operating junction temperature range

TJ

- 40

-

150

°C

Storage temperature range

TStg

- 40

-

125

Junction to case

IGBT

RthJC

-

-

0.29

Diode

-

-

0.61

°C/W

Case to sink per module

RthCS

Heatsink compound thermal conductivity = 1 W/mK

-

0.06

-

Clearance (1)

External shortest distance in air between 2 terminals

5.5

-

-

mm

Creepage (2)

Shortest distance along external surface of the

8

-

-

insulating material between 2 terminals

A mounting compound is recommended and the

Mounting torque to heatsink

torque should be checked after 3 hours to allow for

3 ± 10 %

Nm

the spread of the compound. Lubricated threads.

Weight

66

g

Document Number: 94507	For technical questions, contact: [e-mail]	www.vishay.com
Revision: 01-Mar-10		3

40MT120UHAPbF, 40MT120UHTAPbF

Vishay High Power Products "Half Bridge" IGBT MTP (Ultrafast NPT IGBT), 80 A

100
80
60
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40
20
0
0	20	40	60	80	100	120	140	160
				TC (°C)

Fig. 1 - Maximum DC Collector Current vs. Case Temperature

600
500
400
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300
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200
100
0
0	20	40	60	80	100	120	140	160
				TC (°C)

Fig. 2 - Power Dissipation vs. Case Temperature

1000
100
10			10 μs
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1			10ms
0.1			DC
0.01
1	10	100	1000	10000

VCE (V)

Fig. 3 - Forward SOA

TC = 25 °C; TJ ≤ 150 °C

1000

100

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10

1

10

100

1000

10 000

VCE (V)

		Fig. 4 - Reverse BIAS SOA
		TJ = 150 °C; VGE = 15 V
	160	VGE = 18V
	140
		VGE = 15V
	120	VGE = 12V
		VGE = 10V
	100	VGE = 8.0V
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	80
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	40
	20
	0
	0	2	4	6	8	10

VCE (V)

	Fig. 5 - Typical IGBT Output Characteristics
		TJ = - 40 °C; tp = 80 μs
	160	VGE = 18V
	140
		VGE = 15V
	120	VGE = 12V
		VGE = 10V
	100	VGE = 8.0V
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	80
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	40
	20
	0
	0	2	4	6	8	10

VCE (V)

Fig. 6 - Typical IGBT Output Characteristics TJ = 25 °C; tp = 80 μs

www.vishay.com	For technical questions, contact: [e-mail]	Document Number: 94507
4		Revision: 01-Mar-10