VISHAY 40EPS12 VIS Datasheet

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TO-247AC modified

High Voltage, Input Rectifier Diode, 40 A

VS-40EPS..PbF Series, VS-40EPS..-M3 Series

Vishay Semiconductors

Base

cathode

2

FEATURES

• Very low forward voltage drop

• 150 °C max. operating junction temperature

• Designed and qualified according to
JEDEC-JESD47

• Compliant to RoHS Directive 2002/95/EC

• Halogen-free according to IEC 61249-2-21

13

Cathode

Anode

definition (-M3 only)

APPLICATIONS

PRODUCT SUMMARY

Package TO-247AC modified (2 pins)

I

F(AV)

V

R

V

at I

F

F

I

FSM

T

max. 150 °C

J

Diode variation Single die

40 A

800 V, 1200 V

1.1 V

475 A

• Input rectification

• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines

DESCRIPTION

High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage.

These devices are intended for use in main rectification
(single or three phase bridge).

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

I

FSM

V

T

RRM

F

J

Sinusoidal waveform 40 A

Range 800/1200 V

475 A

40 A, TJ = 25 °C 1.1 V

- 40 to 150 °C

VOLTAGE RATINGS

PART NUMBER

VS-40EPS08PbF, VS-40EPS08-M3 800 900

VS-40EPS12PbF, VS-40EPS12-M3 1200 1300

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current I

Maximum peak one cycle
non-repetitive surge current

Maximum I

Maximum I

Revision: 04-Nov-11

, MAXIMUM

V

RRM

PEAK REVERSE VOLTAGE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

I

RRM

AT 150 °C

mA

1

F(AV)

I

FSM

2

t for fusing I2t

2

t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 11 310 A2s

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TC = 105 °C, 180° conduction half sine wave 40

10 ms sine pulse, rated V

applied 400

RRM

10 ms sine pulse, no voltage reapplied 475

10 ms sine pulse, rated V

applied 800

RRM

10 ms sine pulse, no voltage reapplied 1131

1

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A

A

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2

s

VS-40EPS..PbF Series, VS-40EPS..-M3 Series

95

135

140

145

150

130

125

120

115

110

105

100

Maximum Allowable Case

Temperature (°C)

Average Forward Current (A)

45403530252015105

0

30°

60°

90°

120°

180°

VS-40EPS.. Series
R

thJC

(DC) = 0.6 K/W

Conduction angle

Ø

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ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage drop V

Forward slope resistance r

Threshold voltage V

Maximum reverse leakage current I

FM

F(TO)

RM

20 A, TJ = 25 °C 1.0

t

40 A, T

TJ = 150 °C

TJ = 25 °C

T

= 25 °C 1.1

J

V

= Rated V

= 150 °C 1.0

J

R

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storrage
temperature range

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
junction to ambient

Typical thermal resistance,
case to heatsink

Approximate weight

Mounting torque

minimum 6 (5)

maximum 12 (10)

Marking device Case style TO-247AC modified (JEDEC)

, T

T

J

Stg

R

DC operation 0.6

thJC

40

R

thJA

R

thCS

Mounting surface, flat, smooth and greased 0.2

Vishay Semiconductors

V

7.16 m

0.74 V

RRM

0.1

- 40 to 150 °C

6g

0.21 oz.

40EPS08

40EPS12

mA

°C/W

kgf · cm
(lbf · in)

Revision: 04-Nov-11

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150

140

130

120

30°

Temperture (°C)

110

Maximum Allowable Case

100

0

Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics

Average Forward Current (A)

2

VS-40EPS.. Series
R

(DC) = 0.6 K/W

thJC

Ø

Conduction period

60°

90°

120°

180°

2010 30 40 50 60

DC

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70

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40

30

50

60

70

80

20

10

0

Maximum Average Forward

Power Loss (W)

Average Forward Current (A)

70605040302010

0

DC
180°
120°

90°

60°

30°

RMS limit

VS-40EPS.. Series
T

J

= 150°C

Ø

Conduction period

1

100

10

1000

Instantaneous Forward Current (A)

Instantaneous Forward Voltage (V)

0.5 2.0 2.51.51.0

3.0

0

TJ = 25 °C

TJ = 150 °C

VS-40EPS.. Series

400

450

500

350

300

250

200

150

100

Peak Half Sine Wave

Forward Current (A)

Pulse Train Duration (S)

0.1 1.00.01

Maximum non-repetitive surge current

VS-40EPS.. Series

Initial TJ = 150 °C
No voltage reapplied
Rated V

RRM

reapplied

versus pulse train duration.

60

55

50

45

40

35

30

25

20

Power Loss (W)

15

10

Maximum Average Forward

5

0

180°
120°

90°
60°
30°

5

0

V

- Forward Voltage Drop (V)

FM

Fig. 3 - Forward Power Loss Characteristics

VS-40EPS..PbF Series, VS-40EPS..-M3 Series

Vishay Semiconductors

RMS limit

Ø

Conduction angle

VS-40EPS.. Series
T

= 150 °C

J

40353025201510

Fig. 5 - Forward Voltage Drop Chacteristics

Fig. 4 - Forward Power Loss Characteristics

1

0.1

- Transient Thermal

Revision: 04-Nov-11

Impedance (°C/W)

thJC

Z

0.01

0.001 0.01 0.1 1

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Fig. 6 - Maximum Non-Repetitive Surge Current

Steady state value:
(DC operation)

D = 0.50
D = 0.33
D = 0.25

Single pulse

D = 0.17
D = 0.08

VS-40EPS.. Series

Square Wave Pulse Duration (s)

Fig. 7 - Thermal Impedance Z

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Characteristics

thJC

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VS-40EPS..PbF Series, VS-40EPS..-M3 Series

1

- Current rating (40 = 40 A)

- Vishay Semiconductors product

2

- Circuit configuration:

3

- Package:

4

- Type of silicon:

5

- Voltage rating

6

E = Single diode

P = TO-247AC modified

S = Standard recovery rectifier

12 = 1200 V

08 = 800 V

Device code

51 32 4 6 7

40VS- E P S 12 PbF

-

7

Environmental digit:

PbF = Lead (Pb)-free and RoHS compliant

-M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free

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ORDERING INFORMATION TABLE

Vishay Semiconductors

ORDERING INFORMATION (Example)

PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION

VS-40EPS08PbF 25 500 Antistatic plastic tubes

VS-40EPS08-M3 25 500 Antistatic plastic tubes

VS-40EPS12PbF 25 500 Antistatic plastic tubes

VS-40EPS12-M3 25 500 Antistatic plastic tubes

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95253

Part marking information

TO-247AC modified PbF www.vishay.com/doc?95255

TO-247AC modified -M3 www.vishay.com/doc?95442

Revision: 04-Nov-11

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DIMENSIONS in millimeters and inches

Outline Dimensions

Vishay Semiconductors

(2) R/2

Q

2 x R

(5) L1

0.10 AC

Planting

B

(2)

C

2 x b2

3 x b

M M

(c)

Section C - C, D - D, E - E

E

1

2

b4

(b1, b3, b5)

(b, b2, b4)

(3)

N

3

(4)

2 x e

S

D

L

Base metal

c1

See view B

A

A2

A

D

A

C

A1

DDE E

View B

A

(6)

ΦP

M M

Ø K BD

D2

Thermal pad

Lead assignments

Diodes

1. - Anode/open

C

C

2. - Cathode

3. - Anode

(Datum B)

ΦP1

D1 (4)

4

(4)
E1

View A - A

SYMBOL

MILLIMETERS INCHES

MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

NOTES SYMBOL

MILLIMETERS INCHES

NOTES

A 4.65 5.31 0.183 0.209 D2 0.51 1.30 0.020 0.051
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 3
A2 1.50 2.49 0.059 0.098 E1 13.72 - 0.540 -

b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC

b1 0.99 1.35 0.039 0.053 K 2.54 0.010
b2 1.65 2.39 0.065 0.094 L 14.20 16.10 0.559 0.634
b3 1.65 2.37 0.065 0.094 L1 3.71 4.29 0.146 0.169
b4 2.59 3.43 0.102 0.135 N 7.62 BSC 0.3
b5 2.59 3.38 0.102 0.133 P 3.56 3.66 0.14 0.144

c 0.38 0.86 0.015 0.034 P1 - 6.98 - 0.275

c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224

D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 1.78 0.216

D1 13.08 - 0.515 - 4 S 5.51 BSC 0.217 BSC

Notes

(1)

Dimensioning and tolerance per ASME Y14.5M-1994

(2)

Contour of slot optional

(3)

Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body

(4)

Thermal pad contour optional with dimensions D1 and E1

(5)

Lead finish uncontrolled in L1

(6)

P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")

(7)

Outline conforms to JEDEC outline TO-247 with exception of dimension c

Revision: 21-Jun-11

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Revision: 12-Mar-12

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