Vishay 32CTQ...PbF Data Sheet
TO-220AB
PRODUCT SUMMARY
I
F(AV)
V
R
Schottky Rectifier, 2 x 15 A
FEATURES
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for industrial level
DESCRIPTION
The 32CTQ...PbF Schottky rectifier series has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation up
to 150 °C junction temperature. Typical applications are in
switching power supplies, converters, freewheeling diodes,
and reverse battery protection.
Anode
Base
common
cathode
Common
1 3
cathode
2 x 15 A
25/30 V
2
Anode
2
32CTQ...PbF
Vishay High Power Products
Pb-free
Available
RoHS*
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Rectangular waveform 30 A
25/30 V
tp = 5 µs sine 900 A
15 Apk, TJ = 125 °C 0.40 V
Range - 55 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL 32CTQ025PbF 32CTQ030PbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
25 30 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy E
Repetitive avalanche current I
I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 115 °C, rectangular waveform 30
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 250
TJ = 25 °C, IAS = 1.20 A, L = 11.10 mH 13 mJ
AS
Current decaying linearly to zero in 1 µs
Frequency limited by T
maximum VA = 1.5 x VR typical
J
Following any rated load
condition and with rated
V
applied
RRM
900
3A
A
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94202 For technical questions, contact: diodes-tech@vishay.com
Revision: 13-Aug-08 1
www.vishay.com
32CTQ...PbF
Vishay High Power Products
Schottky Rectifier, 2 x 15 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
15 A
Maximum forward voltage drop
See fig. 1
V
FM
30 A 0.58
(1)
15 A
30 A 0.53
Maximum reverse leakage current
See fig. 2
I
RM
Threshold voltage V
Forward slope resistance r
Maximum junction capacitance per leg C
Typical series inductance per leg L
F(TO)
TJ = 25 °C
(1)
T
= 125 °C 97
J
TJ = TJ maximum
t
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 1300 pF
T
Measured lead to lead 5 mm from package body 8.0 nH
S
Maximum voltage rate of change dV/dt Rated V
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
R
0.49
0.40
1.75
0.233 V
9.09 mΩ
10 000 V/µs
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style TO-220AB
T
, T
J
Stg
R
thJC
R
thCS
DC operation
See fig. 4
Mounting surface, smooth and greased 0.50
- 55 to 150 °C
3.25
2g
0.07 oz.
kgf · cm
(lbf · in)
32CTQ025
32CTQ030
V
mA
°C/W
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94202
2 Revision: 13-Aug-08
32CTQ...PbF
1000
100
10
1
- Instantaneous Forward Current (A)
F
I
Schottky Rectifier, 2 x 15 A
TJ = 150 °C
= 125 °C
T
J
= 25 °C
T
J
0.40 0.2 0.6 1.0 1.4 1.6
VFM - Forward Voltage Drop (V)
1.2
- Reverse Current (mA)
R
I
1.80.8
Vishay High Power Products
1000
10
0.1
1
0
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
5
10 20 25 3015
VR - Reverse Voltage (V)
100
0.01
0.001
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10 000
1000
- Junction Capacitance (pF)
T
C
100
015 35
52025
TJ = 25 °C
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
D = 0.75
D = 0.50
0.1
D = 0.33
D = 0.25
D = 0.20
0.01
Single pulse
(thermal resistance)
- Thermal Impedance (°C/W)
thJC
Z
0.001
0.00001 0.0001 0.001 0.01 0.1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
3010
Characteristics
thJC
P
DM
t
1
t
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
1
2
1/t2
+ T
thJC
C
10
Document Number: 94202 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 13-Aug-08 3
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