Vishay 31DQ09G, 31DQ10G Data Sheet

31DQ09G, 31DQ10G

Vishay High Power Products

Schottky Rectifier, 3.3 A

FEATURES

				•	Low profile, axial leaded outline
				•	High frequency operation
				•	Very low forward voltage drop
Cathode		Anode		•	High purity, high temperature epoxy encapsulation
					forenhanced mechanical strength and moisture resistance
				• Guard ring for enhanced ruggedness and long
C-16					termreliability
				•	Lead (Pb)-free plating
				•	Designed and qualified for industrial level

PRODUCT SUMMARY

IF(AV)	3.3 A
VR	90/100 V

DESCRIPTION

The 31DQ..G axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL	CHARACTERISTICS	VALUES	UNITS
IF(AV)	Rectangular waveform	3.3	A
VRRM		90/100	V
IFSM	tp = 5 µs sine	370	A
VF	3 Apk, TJ = 25 °C	0.85	V
TJ		- 40 to 150	°C

VOLTAGE RATINGS

	PARAMETER	SYMBOL	31DQ09G	31DQ10G	UNITS
	Maximum DC reverse voltage	VR	90	100	V
	Maximum working peak reverse voltage	VRWM

ABSOLUTE MAXIMUM RATINGS

	PARAMETER	SYMBOL	TEST CONDITIONS		VALUES	UNITS
	Maximum average forward current	IF(AV)	50 % duty cycle at TC = 53.4 °C, rectangular waveform		3.3
	See fig. 4
						A
	Maximum peak one cycle		5 µs sine or 3 µs rect. pulse	Following any rated load	370
	non-repetitive surge current, TJ = 25 °C	IFSM		condition and with rated
			10 ms sine or 6 ms rect. pulse		60
	See fig. 6			VRRM applied
	Non-repetitive avalanche energy	EAS	TJ = 25 °C, IAS = 1 A, 18 µs square pulse		3.0	mJ
	Repetitive avalanche current	IAR	Current decaying linearly to zero in 1 µs		0.5	A
			Frequency limited by TJ maximum VA = 1.5 x VR typical

Document Number: 93322	For technical questions, contact: [e-mail]	www.vishay.com
Revision: 06-Nov-08		1

31DQ09G, 31DQ10G

Vishay High Power Products			Schottky Rectifier, 3.3 A
ELECTRICAL SPECIFICATIONS
PARAMETER		SYMBOL		TEST CONDITIONS		VALUES	UNITS
				3 A	TJ = 25 °C	0.85
Maximum forward voltage drop		VFM (1)		6 A		0.97	V
See fig. 1				3 A	TJ = 125 °C	0.69
				6 A		0.80
Maximum reverse leakage current		IRM (1)		TJ = 25 °C	VR = Rated VR	0.1	mA
See fig. 2				TJ = 125 °C		3
Typical junction capacitance		CT		VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C		110	pF
Typical series inductance		LS		Measured lead to lead 5 mm from package body		9.0	nH
Maximum voltage rate of charge		dV/dt		Rated VR		10 000	V/µs
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER		SYMBOL		TEST CONDITIONS		VALUES	UNITS
Maximum junction and storage		TJ, TStg				- 40 to 150	°C
temperature range
Maximum thermal resistance,		RthJA		DC operation		80
junction to ambient				Without cooling fin
							°C/W
Typical thermal resistance,		RthJL		DC operation		34
junction to lead
Approximate weight						1.2	g
						0.042	oz.
Marking device				Case style C-16		31DQ09G
						31DQ10G

www.vishay.com	For technical questions, contact: [e-mail]	Document Number: 93322
2		Revision: 06-Nov-08