C-16
Schottky Rectifier, 3.3 A
FEATURES
• Low profile, axial leaded outline
• High frequency operation
• Very low forward voltage drop
Cathode Anode
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free plating
• Designed and qualified for industrial level
31DQ09, 31DQ10
Vishay High Power Products
PRODUCT SUMMARY
I
F(AV)
V
R
3.3 A
90/100 V
DESCRIPTION
The 31DQ.. axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Rectangular waveform 3.3 A
90/100 V
tp = 5 µs sine 210 A
3 Apk, TJ = 25 °C 0.85 V
- 40 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL 31DQ09 31DQ10 UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
90 100 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 4
Maximum peak one cycle
non-repetitive surge current
See fig. 6
Non-repetitive avalanche energy E
Repetitive avalanche current I
I
F(AV)
I
FSM
AR
50 % duty cycle at TL = 108 °C, rectangular waveform 3.3
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 34
TJ = 25 °C, I
AS
Current decaying linearly to zero in 1 µs
Frequency limited by T
= 1 A, L = 6 mH 3.0 mJ
AS
maximum VA = 1.5 x VR typical
J
Following any rated load
condition and with rated
V
applied
RRM
210
0.5 A
A
Document Number: 93321 For technical questions, contact: diodes-tech@vishay.com
Revision: 06-Nov-08 1
www.vishay.com
31DQ09, 31DQ10
Vishay High Power Products
Schottky Rectifier, 3.3 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
3 A
Maximum forward voltage drop
See fig. 1
V
FM
6 A 0.97
(1)
3 A
6 A 0.80
Maximum reverse leakage current
See fig. 4
I
RM
Typical junction capacitance C
Typical series inductance L
T
S
TJ = 25 °C
(1)
T
= 125 °C 3
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 110 pF
Measured lead to lead 5 mm from package body 9.0 nH
Maximum voltage rate of charge dV/dt Rated V
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
R
0.85
0.69
1
10 000 V/µs
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
junction to lead
Approximate weight
Marking device Case style C-16
Note
dP
(1)
------------dT
1
tot
J
thermal runaway condition for a diode on its own heatsink
--------------<
R
thJA
(1)
, T
T
J
Stg
R
thJA
R
thJL
DC operation
Without cooling fin
DC operation 15
- 40 to 150 °C
80
1.2 g
0.042 oz.
31DQ09
31DQ10
V
mA
°C/W
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 93321
2 Revision: 06-Nov-08
31DQ09, 31DQ10
10
(A)
F
1
Instantaneous Forward Current - I
T = 150˚C
J
T = 125˚C
J
T = 25˚C
J
Schottky Rectifier, 3.3 A
(pF)
T
Junction Capacitance - C
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Vishay High Power Products
1000
T = 25˚C
J
100
10
04080120160
Reverse Voltage - VR (V)
160
140
120
DC
0.1
0 0.3 0.6 0.9 1.
Forward Voltage Drop - VFM (V)
2
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10
T = 150˚C
J
1
125˚C
(mA)
R
0.1
0.01
0.001
0.0001
Reverse Current - I
0
0 20406080100
25˚C
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Square wave (D = 0.50)
100
80% Rated Vr applied
80
see note (1)
Allowable Lead Temperature (°C)
60
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
Average Forward Current - I
F(AV)
(A)
Fig. 4 - Maximum Allowable Lead Temperature vs.
Average Forward Current
4
D = 0.20
D = 0.25
D = 0.33
3
D = 0.50
D = 0.75
2
RMS Limit
DC
1
Average Power Loss (Watts)
0
012345
Average Forward Current - I
F(AV)
(A)
Fig. 5 - Forward Power Loss Characteristics
Note
(1)
Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
F(AV)
) x R
REV
x VFM at (I
;
thJL
/D) (see fig. 6); Pd
F(AV)
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V
REV
R
Document Number: 93321 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 06-Nov-08 3
31DQ09, 31DQ10
Vishay High Power Products
(A)
Non-Repetitive Surge Current - I
ORDERING INFORMATION TABLE
Device code
Schottky Rectifier, 3.3 A
1000
FSM
100
Fig. 6 - Maximum Non-Repetitive Surge Current
At Any Rated Load Condition
And With Rated V Applied
Following Surge
10
10 100 1000 10000
Square Wave Pulse Duration - tp(microsec)
RRM
31 D Q 10 TR
51324
- 31 = 3.1 A (axial and small packages - current is x 10)
1
- D = DO-201 package
2
- Q = Schottky Q.. series
3
- 10 = Voltage ratings
4
5
- TR = Tape and reel package (1200 pcs)
09 = 90 V
10 = 100 V
None = Box package (500 pcs)
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95242
Part marking information http://www.vishay.com/doc?95304
Packaging information http://www.vishay.com/doc?95309
SPICE model http://www.vishay.com/doc?95300
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
4 Revision: 06-Nov-08
Document Number: 93321
DIMENSIONS in millimeters (inches)
Outline Dimensions
Vishay Semiconductors
Axial DO-201AD (C-16)
21.0 (0.83) MIN.
(2 places)
Ø 1.40 (0.055)
Ø 1.20 (0.047)
(2 places)
Ø 5.8 (0.23)
MAX.
10.0 (0.39)
MAX.
Cathode band
21.0 (0.83) MIN.
(2 places)
10.0 (0.39)
MAX.
2.54 (0.100) MAX.
Flash (2 places)
Ø 1.40 (0.055)
Ø 1.20 (0.047)
(2 places)
Ø 5.8 (0.23)
MAX.
Document Number: 95242 For technical questions, contact: indmodules@vishay.com
Revision: 20-Nov-08 1
www.vishay.com
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