Vishay 31DQ09, 31DQ10 Data Sheet
Document Number: 93321 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 06-Nov-08 1
Schottky Rectifier, 3.3 A
31DQ09, 31DQ10
Vishay High Power Products
FEATURES
• Low profile, axial leaded outline
• High frequency operation
• Very low forward voltage drop
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free plating
• Designed and qualified for industrial level
DESCRIPTION
The 31DQ.. axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection
PRODUCT SUMMARY
I
F(AV)
3.3 A
V
R
90/100 V
C-16
Cathode Anode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 3.3 A
V
RRM
90/100 V
I
FSM
t
p
= 5 µs sine 210 A
V
F
3 Apk, T
J
= 25 °C 0.85 V
T
J
- 40 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL 31DQ09 31DQ10 UNITS
Maximum DC reverse voltage V
R
90 100 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 4
I
F(AV)
50 % duty cycle at T
L
= 108 °C, rectangular waveform 3.3
A
Maximum peak one cycle
non-repetitive surge current
See fig. 6
I
FSM
5 µs sine or 3 µs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
210
10 ms sine or 6 ms rect. pulse 34
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 1 A, L = 6 mH 3.0 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 µs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
0.5 A
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 93321
2 Revision: 06-Nov-08
31DQ09, 31DQ10
Vishay High Power Products
Schottky Rectifier, 3.3 A
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
Note
(1)
thermal runaway condition for a diode on its own heatsink
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
V
FM
(1)
3 A
T
J
= 25 °C
0.85
V
6 A 0.97
3 A
T
J
= 125 °C
0.69
6 A 0.80
Maximum reverse leakage current
See fig. 4
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
1
mA
T
J
= 125 °C 3
Typical junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C 110 pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 9.0 nH
Maximum voltage rate of charge dV/dt Rated V
R
10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
(1)
, T
Stg
- 40 to 150 °C
Maximum thermal resistance,
junction to ambient
R
thJA
DC operation
Without cooling fin
80
°C/W
Typical thermal resistance,
junction to lead
R
thJL
DC operation 15
Approximate weight
1.2 g
0.042 oz.
Marking device Case style C-16
31DQ09
31DQ10
dP
tot
dT
J
-------------
1
R
thJA
--------------<
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