Vishay 31DQ09G, 31DQ10G Data Sheet

C-16

Schottky Rectifier, 3.3 A

FEATURES

• Low profile, axial leaded outline

• High frequency operation

• Very low forward voltage drop

Cathode Anode

• High purity, high temperature epoxy encapsulation
forenhanced mechanical strength and moisture resistance

• Guard ring for enhanced ruggedness and long
termreliability

• Lead (Pb)-free plating

• Designed and qualified for industrial level

31DQ09G, 31DQ10G

Vishay High Power Products

PRODUCT SUMMARY

I

F(AV)

V

R

3.3 A

90/100 V

DESCRIPTION

The 31DQ..G axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

RRM

I

FSM

V

F

T

J

Rectangular waveform 3.3 A

90/100 V

tp = 5 µs sine 370 A

3 Apk, TJ = 25 °C 0.85 V

- 40 to 150 °C

VOLTAGE RATINGS

PARAMETER SYMBOL 31DQ09G 31DQ10G UNITS

Maximum DC reverse voltage V

Maximum working peak reverse voltage V

R

RWM

90 100 V

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current
See fig. 4

Maximum peak one cycle
non-repetitive surge current, T
See fig. 6

Non-repetitive avalanche energy E

Repetitive avalanche current I

Document Number: 93322 For technical questions, contact: [e-mail]
Revision: 06-Nov-08 1

= 25 °C

J

I

F(AV)

I

FSM

AR

50 % duty cycle at TC = 53.4 °C, rectangular waveform 3.3

5 µs sine or 3 µs rect. pulse

10 ms sine or 6 ms rect. pulse 60

TJ = 25 °C, I

AS

Current decaying linearly to zero in 1 µs
Frequency limited by T

= 1 A, 18 µs square pulse 3.0 mJ

AS

maximum VA = 1.5 x VR typical

J

Following any rated load
condition and with rated
V

applied

RRM

370

0.5 A

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A

31DQ09G, 31DQ10G

Vishay High Power Products

Schottky Rectifier, 3.3 A

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

3 A

Maximum forward voltage drop
See fig. 1

V

FM

6 A 0.97

(1)

3 A

6 A 0.80

Maximum reverse leakage current
See fig. 2

I

RM

Typical junction capacitance C

Typical series inductance L

T

S

TJ = 25 °C

(1)

T

= 125 °C 3

J

VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 110 pF

Measured lead to lead 5 mm from package body 9.0 nH

Maximum voltage rate of charge dV/dt Rated V

T

= 25 °C

J

= 125 °C

T

J

V

= Rated V

R

R

R

0.85

0.69

0.1

10 000 V/µs

Note

(1)

Pulse width < 300 µs, duty cycle < 2 %

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance,
junction to ambient

Typical thermal resistance,
junction to lead

Approximate weight

Marking device Case style C-16

, T

T

J

Stg

R

thJA

R

thJL

DC operation
Without cooling fin

DC operation 34

- 40 to 150 °C

80

1.2 g

0.042 oz.

31DQ09G

31DQ10G

V

mA

°C/W

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 93322

2 Revision: 06-Nov-08