Vishay 31DQ05, 31DQ06 Data Sheet
31DQ05, 31DQ06
Vishay High Power Products
Schottky Rectifier, 3.3 A
FEATURES
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Low profile, axial leaded outline |
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High frequency operation |
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Very low forward voltage drop |
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Cathode |
Anode |
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High purity, high temperature epoxy encapsulation for |
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enhanced mechanical strength and moisture resistance |
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• Guard ring for enhanced ruggedness and long term |
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C-16 |
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reliability |
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Lead (Pb)-free plating |
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Designed and qualified for industrial level |
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PRODUCT SUMMARY
IF(AV) |
3.3 A |
VR |
50/60 V |
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DESCRIPTION
The 31DQ.. axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection
MAJOR RATINGS AND CHARACTERISTICS |
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CHARACTERISTICS |
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VALUES |
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IF(AV) |
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Rectangular waveform |
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3.3 |
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A |
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VRRM |
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50/60 |
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V |
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IFSM |
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tp = 5 µs sine |
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340 |
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A |
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VF |
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3 Apk, TJ = 25 °C |
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0.62 |
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V |
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TJ |
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- 40 to 150 |
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°C |
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VOLTAGE RATINGS |
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PARAMETER |
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SYMBOL |
31DQ05 |
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31DQ06 |
UNITS |
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Maximum DC reverse voltage |
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VR |
50 |
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60 |
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V |
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Maximum working peak reverse voltage |
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VRWM |
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ABSOLUTE MAXIMUM RATINGS |
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PARAMETER |
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TEST CONDITIONS |
VALUES |
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Maximum average forward current |
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IF(AV) |
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50 % duty cycle at TL = 105 °C, rectangular waveform |
3.3 |
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See fig. 4 |
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A |
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Maximum peak one cycle |
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5 µs sine or 3 µs rect. pulse |
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Following any rated load |
340 |
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non-repetitive surge current |
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IFSM |
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condition and with rated |
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10 ms sine or 6 ms rect. pulse |
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55 |
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See fig. 6 |
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VRRM applied |
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Non-repetitive avalanche energy |
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EAS |
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TJ = 25 °C, IAS = 1 A, L = 10 mH |
5.0 |
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mJ |
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Repetitive avalanche current |
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IAR |
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Current decaying linearly to zero in 1 µs |
1.0 |
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A |
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Frequency limited by TJ maximum VA = 1.5 x VR typical |
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Document Number: 93320 |
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For technical questions, contact: diodes-tech@vishay.com |
www.vishay.com |
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Revision: 06-Nov-08 |
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1 |
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31DQ05, 31DQ06
Vishay High Power Products |
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Schottky Rectifier, 3.3 A |
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ELECTRICAL SPECIFICATIONS |
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PARAMETER |
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TEST CONDITIONS |
VALUES |
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UNITS |
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3 A |
TJ = 25 °C |
0.62 |
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Maximum forward voltage drop |
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VFM (1) |
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6 A |
0.78 |
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V |
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See fig. 1 |
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3 A |
TJ = 125 °C |
0.54 |
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6 A |
0.65 |
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Maximum reverse leakage current |
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IRM (1) |
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TJ = 25 °C |
VR = Rated VR |
2 |
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mA |
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See fig. 4 |
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TJ = 125 °C |
15 |
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Typical junction capacitance |
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CT |
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VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C |
160 |
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pF |
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Typical series inductance |
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LS |
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Measured lead to lead 5 mm from package body |
9.0 |
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nH |
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Maximum voltage rate of charge |
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dV/dt |
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Rated VR |
10 000 |
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V/µs |
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Note |
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(1) |
Pulse width < 300 µs, duty cycle < 2 % |
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THERMAL - MECHANICAL SPECIFICATIONS |
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PARAMETER |
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SYMBOL |
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TEST CONDITIONS |
VALUES |
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UNITS |
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Maximum junction and storage |
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T |
(1), T |
Stg |
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- 40 to 150 |
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°C |
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temperature range |
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J |
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Maximum thermal resistance, |
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RthJA |
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DC operation |
80 |
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junction to ambient |
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Without cooling fin |
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°C/W |
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Typical thermal resistance, |
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RthJL |
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DC operation |
15 |
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junction to lead |
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Approximate weight |
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1.2 |
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0.042 |
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oz. |
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Marking device |
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Case style C-16 |
31DQ05 |
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31DQ06 |
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Note |
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(1) |
dPtot |
1 |
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------------- < -------------- thermal runaway condition for a diode on its own heatsink |
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dTJ |
RthJA |
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www.vishay.com |
For technical questions, contact: diodes-tech@vishay.com |
Document Number: 93320 |
2 |
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Revision: 06-Nov-08 |
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