Vishay 31DQ03, 31DQ04 Data Sheet

31DQ03, 31DQ04

Vishay High Power Products

Schottky Rectifier, 3.3 A

FEATURES

				•	Low profile, axial leaded outline
				•	High frequency operation
				•	Very low forward voltage drop
Cathode		Anode		•	High purity, high temperature epoxy encapsulation for
					enhanced mechanical strength and moisture resistance
				• Guard ring for enhanced ruggedness and long term
C-16					reliability
				•	Lead (Pb)-free plating
				•	Designed and qualified for industrial level

PRODUCT SUMMARY

IF(AV)	3.3 A
VR	30/40 V

DESCRIPTION

The 31DQ.. axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

IF(AV)

Rectangular waveform

3.3

A

VRRM

30/40

V

IFSM

tp = 5 µs sine

450

A

VF

3 Apk, TJ = 25 °C

0.57

V

TJ

- 40 to 150

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

31DQ03

31DQ04

UNITS

Maximum DC reverse voltage

VR

30

40

V

Maximum working peak reverse voltage

VRWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

IF(AV)

50 % duty cycle at TL = 117 °C, rectangular waveform

3.3

See fig. 4

A

Maximum peak one cycle

5 µs sine or 3 µs rect. pulse

Following any rated load

450

non-repetitive surge current

IFSM

condition and with rated

10 ms sine or 6 ms rect. pulse

90

See fig. 6

VRRM applied

Non-repetitive avalanche energy

EAS

TJ = 25 °C, IAS = 1.0 A, L = 12 mH

6.0

mJ

Repetitive avalanche current

IAR

Current decaying linearly to zero in 1 µs

1.0

A

Frequency limited by TJ maximum VA = 1.5 x VR typical

Document Number: 93319

For technical questions, contact: [e-mail]

www.vishay.com

Revision: 06-Nov-08

1

31DQ03, 31DQ04

Vishay High Power Products

Schottky Rectifier, 3.3 A

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

3 A

TJ = 25 °C

0.57

Maximum forward voltage drop

VFM (1)

6 A

0.71

V

See fig. 1

3 A

TJ = 125 °C

0.51

6 A

0.62

Maximum reverse leakage current

IRM (1)

TJ = 25 °C

VR = Rated VR

1

mA

See fig. 4

TJ = 125 °C

20

Typical junction capacitance

CT

VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C

190

pF

Typical series inductance

LS

Measured lead to lead 5 mm from package body

9.0

nH

Maximum voltage rate of charge

dV/dt

Rated VR

10 000

V/µs

Note

(1)

Pulse width < 300 µs, duty cycle < 2 %

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and storage

T

(1), T

Stg

- 40 to 150

°C

temperature range

J

Maximum thermal resistance,

RthJA

DC operation

80

junction to ambient

Without cooling fin

°C/W

Typical thermal resistance,

RthJL

With fin 20 mm x 20 mm (0.79" x 0.79")

15

junction to lead

1.0 mm (0.04") thickness

Approximate weight

1.2

g

0.042

oz.

Marking device

Case style C-16

31DQ03

31DQ04

Note

(1)

dPtot

1

------------- < -------------- thermal runaway condition for a diode on its own heatsink

dTJ

RthJA

www.vishay.com	For technical questions, contact: [e-mail]	Document Number: 93319
2		Revision: 06-Nov-08