TO-220AB
PRODUCT SUMMARY
I
F(AV)
V
R
Schottky Rectifier, 2 x 15 A
FEATURES
• 150 °C TJ operation
Base
common
Anode
2
cathode
2
Common
13
cathode
2 x 15 A
30 V
Anode
• Center tap configuration
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength and
moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for industrial level
DESCRIPTION
This center tap Schottky rectifier has been optimized for very
low forward voltage drop, with moderate leakage. The
proprietary barrier technology allows for reliable operation up
to 150 °C junction temperature. Typical applications are in
switching power supplies, converters, freewheeling diodes,
and reverse battery protection.
30L30CTPbF
Vishay High Power Products
Pb-free
Available
RoHS*
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
V
F
T
J
Rectangular waveform 30 A
30
15 Apk, TJ = 125 °C (per leg) 0.37
Range - 55 to 150 °C
V
VOLTAGE RATINGS
PARAMETER SYMBOL 30L30CTPbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
30 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy per leg E
Repetitive avalanche current per leg I
per device
per leg 15
I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 140 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 220
TJ = 25 °C, IAS = 2 A, L = 7.5 mH 15 mJ
AS
Current decaying linearly to zero in 1 µs
Frequency limited by T
maximum VA = 1.5 x VR typical
J
Following any rated load
condition and with rated
V
applied
RRM
30
1450
2A
A
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94195 For technical questions, contact: diodes-tech@vishay.com
Revision: 13-Aug-08 1
www.vishay.com
30L30CTPbF
Vishay High Power Products
Schottky Rectifier, 2 x 15 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
15 A
Maximum forward voltage drop per leg V
FM
(1)
15 A
30 A 0.57
30 A 0.50
Maximum reverse leakage current per leg I
Maximum junction capacitance per leg C
Typical series inductance per leg L
RM
T
= 125 °C 350
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 1500 pF
T
Measured lead to lead 5 mm from package body 8.0 nH
S
TJ = 25 °C
(1)
Maximum voltage rate of change dV/dt Rated V
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
R
0.46
0.37
1.50
10 000 V/µs
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style TO-220AB 30L30CT
T
, T
J
Stg
DC operation
R
thJC
- 55 to 150 °C
1.5
0.8
2.0 g
0.07 oz.
kgf · cm
(lbf · in)
V
mA
°C/W
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94195
2 Revision: 13-Aug-08
30L30CTPbF
1000
100
10
1
- Instantaneous Forward Current (A)
F
I
0.2 0.6 1.2
0
V
- Forward Voltage Drop (V)
FM
0.80.4
TJ = 150 °C
T
T
1.0
Schottky Rectifier, 2 x 15 A
= 125 °C
J
= 25 °C
J
1.6
1.4
- Reverse Current (mA)
R
I
Vishay High Power Products
1000
TJ = 150 °C
100
TJ = 125 °C
10
0.1
0.01
1
51525
0
V
- Reverse Voltage (V)
R
TJ = 150 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
2010
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10 000
30
1000
- Junction Capacitance (pF)
T
C
100
025
TJ = 25 °C
515 30352010
V
- Reverse Voltage (V)
R
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
10
1
0.1
- Thermal Impedance (°C/W)
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
P
DM
t
1
t
2
1/t2
+ T
thJC
C
10
Document Number: 94195 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 13-Aug-08 3