Vishay 30ETH06, 30ETH06S, 30ETH06-1 Data Sheet
Bulletin PD-20748 rev. D 08/01
N
C
N
30ETH06
30ETH06S
30ETH06-1
Hyperfast Rectifier
Features
t
= 28ns typ.
• Hyperfastfast Recovery Time
• Low Forward Voltage Drop
• Low Leakage Current
• 175°C Operating Junction Temperature
• Dual Diode Center Tap
Description/ Applications
State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop,
Hyperfast recover time, and soft recovery.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling
diodes.
The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
rr
I
= 30Amp
F(AV)
VR = 600V
Absolute Maximum Ratings
Parameters Max Units
V
RRM
I
F(AV)
I
FSM
TJ, T
Peak Repetitive Reverse Voltage 600 V
Average Rectifier Forward Current @ TC = 103°C 30 A
Non Repetitive Peak Surge Current @ TJ = 25°C 200
Operating Junction and Storage Temperatures - 65 to 175 °C
STG
30ETH06
Base
Cathode
athode
1
Anode
3
TO-220AC
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Case Styles
30ETH06S
Base
Cathode
2
1
/C
D2PAK
3
Anode
30ETH06-1
2
1
/C
TO-262
3
Anode
1
30ETH06, 30ETH06S, 30ETH06-1
Bulletin PD-20748 rev. D 08/01
Electrical Characteristics @ T
= 25°C (unless otherwise specified)
J
Parameters Min Typ Max Units Test Conditions
VBR, VrBreakdown Voltage, 600 - - V IR = 100µA
Blocking Voltage
V
Forward Voltage - 2.0 2.6 V IF = 30A, TJ = 25°C
F
- 1.34 1.75 V IF = 30A, TJ = 150°C
I
Reverse Leakage Current - 0.3 50 µA VR = VR Rated
R
- 60 500 µA TJ = 150°C, VR = VR Rated
C
L
Junction Capacitance - 33 - pF VR = 600V
T
Series Inductance - 8.0 - nH Measured lead to lead 5mm from package body
S
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters Min Typ Max Units Test Conditions
t
rr
I
RRM
Q
Reverse Recovery Time - 28 35 ns IF = 1.0A, diF/dt = 50A/µs, VR = 30V
-31- TJ = 25°C
77 - TJ = 125°C
Peak Recovery Current - 3.5 - A TJ = 25°C
- 7.7 - TJ = 125°C
Reverse Recovery Charge - 65 - nC TJ = 25°C
rr
- 345 - TJ = 125°C
I
= 30A
F
VR = 200V
diF /dt = 200A/µs
Thermal - Mechanical Characteristics
Parameters Min Typ Max Units
T
J
T
Stg
R
R
R
Wt Weight - 2.0 - g
! Typical Socket Mount
"#Mounting Surface, Flat, Smooth and Greased
2
Max. Junction Temperature Range - 65 - 175 °C
Max. Storage Temperature Range - 65 - 175
Thermal Resistance, Junction to Case Per Leg - 0.7 1.1 °C/W
thJC
!
Thermal Resistance, Junction to Ambient Per Leg - - 70
thJA
"
Thermal Resistance, Case to Heatsink - 0.2 -
thCS
- 0.07 - (oz)
Mounting Torque 6.0 - 12 Kg-cm
5.0 - 10 lbf.in
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30ETH06, 30ETH06S, 30ETH06-1
Bulletin PD-20748 rev. D 08/01
1000
(A)
100
F
10
Instantaneous Forward Current - I
T = 175˚C
J
T = 150˚C
J
T = 25˚C
J
1000
(µA)
R
100
10
1
Tj = 175˚C
150˚C
125˚C
100˚C
0.1
0.01
Reverse Current - I
0.001
0.0001
0 100 200 300 400 500 600
Reverse Voltage - VR (V)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
1000
T = 25˚C
J
(pF)
T
100
25˚C
1
0 0.5 1 1.5 2 2.5 3 3.5
Forward Voltage Drop - VFM (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
10
(°C/W)
thJC
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
0.1
D = 0.02
D = 0.01
0.01
Thermal Impedance Z
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
Single Pulse
(Thermal Resistance)
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
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Junction Capacitance - C
10
0 100 200 300 400 500 600
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
P
DM
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
Characteristics
thJC
t
1
t
2
3
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