Vishay 30ETH06, 30ETH06S, 30ETH06-1 Data Sheet

Bulletin PD-20748 rev. D 08/01

N

C

N

30ETH06

30ETH06S

30ETH06-1

Hyperfast Rectifier

Features

t

= 28ns typ.

• Hyperfastfast Recovery Time

• Low Forward Voltage Drop

• Low Leakage Current

• 175°C Operating Junction Temperature

• Dual Diode Center Tap

Description/ Applications

State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop,
Hyperfast recover time, and soft recovery.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling
diodes.
The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.

rr

I

= 30Amp

F(AV)

VR = 600V

Absolute Maximum Ratings

Parameters Max Units

V

RRM

I

F(AV)

I

FSM

TJ, T

Peak Repetitive Reverse Voltage 600 V

Average Rectifier Forward Current @ TC = 103°C 30 A

Non Repetitive Peak Surge Current @ TJ = 25°C 200

Operating Junction and Storage Temperatures - 65 to 175 °C

STG

30ETH06

Base

Cathode

athode

1

Anode

3

TO-220AC

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Case Styles

30ETH06S

Base

Cathode

2

1

/C

D2PAK

3

Anode

30ETH06-1

2

1

/C

TO-262

3

Anode

1

30ETH06, 30ETH06S, 30ETH06-1

Bulletin PD-20748 rev. D 08/01

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

J

Parameters Min Typ Max Units Test Conditions

VBR, VrBreakdown Voltage, 600 - - V IR = 100µA

Blocking Voltage

V

Forward Voltage - 2.0 2.6 V IF = 30A, TJ = 25°C

F

- 1.34 1.75 V IF = 30A, TJ = 150°C

I

Reverse Leakage Current - 0.3 50 µA VR = VR Rated

R

- 60 500 µA TJ = 150°C, VR = VR Rated

C

L

Junction Capacitance - 33 - pF VR = 600V

T

Series Inductance - 8.0 - nH Measured lead to lead 5mm from package body

S

Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)

Parameters Min Typ Max Units Test Conditions

t

rr

I

RRM

Q

Reverse Recovery Time - 28 35 ns IF = 1.0A, diF/dt = 50A/µs, VR = 30V

-31- TJ = 25°C

77 - TJ = 125°C

Peak Recovery Current - 3.5 - A TJ = 25°C

- 7.7 - TJ = 125°C

Reverse Recovery Charge - 65 - nC TJ = 25°C

rr

- 345 - TJ = 125°C

I

= 30A

F

VR = 200V

diF /dt = 200A/µs

Thermal - Mechanical Characteristics

Parameters Min Typ Max Units

T

J

T

Stg

R

R

R

Wt Weight - 2.0 - g

! Typical Socket Mount
"#Mounting Surface, Flat, Smooth and Greased

2

Max. Junction Temperature Range - 65 - 175 °C

Max. Storage Temperature Range - 65 - 175

Thermal Resistance, Junction to Case Per Leg - 0.7 1.1 °C/W

thJC

!

Thermal Resistance, Junction to Ambient Per Leg - - 70

thJA

"

Thermal Resistance, Case to Heatsink - 0.2 -

thCS

- 0.07 - (oz)

Mounting Torque 6.0 - 12 Kg-cm

5.0 - 10 lbf.in

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30ETH06, 30ETH06S, 30ETH06-1

Bulletin PD-20748 rev. D 08/01

1000

(A)

100

F

10

Instantaneous Forward Current - I

T = 175˚C

J

T = 150˚C

J

T = 25˚C

J

1000

(µA)

R

100

10

1

Tj = 175˚C

150˚C
125˚C

100˚C

0.1

0.01

Reverse Current - I

0.001

0.0001
0 100 200 300 400 500 600

Reverse Voltage - VR (V)

Fig. 2 - Typical Values Of Reverse Current

Vs. Reverse Voltage

1000

T = 25˚C

J

(pF)

T

100

25˚C

1

0 0.5 1 1.5 2 2.5 3 3.5

Forward Voltage Drop - VFM (V)

Fig. 1 - Typical Forward Voltage Drop Characteristics

10

(°C/W)

thJC

1

D = 0.50
D = 0.20
D = 0.10
D = 0.05

0.1

D = 0.02
D = 0.01

0.01

Thermal Impedance Z

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10

Single Pulse

(Thermal Resistance)

t1, Rectangular Pulse Duration (Seconds)

Fig. 4 - Max. Thermal Impedance Z

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Junction Capacitance - C

10

0 100 200 300 400 500 600

Reverse Voltage - VR (V)

Fig. 3 - Typical Junction Capacitance

Vs. Reverse Voltage

P

DM

Notes:

1. Duty factor D = t1/ t2

2. Peak Tj = Pdm x ZthJC + Tc

Characteristics

thJC

t

1

t

2

3

30ETH06, 30ETH06S, 30ETH06-1

Bulletin PD-20748 rev. D 08/01

180

160

140

DC

120

Square wave (D = 0.50)

100

Rated Vr applied

Allowable Case Temperature (°C)

see note (3)

80

0 5 10 15 20 25 30 35 40 45

Average Forward Current - IF

Fig. 5 - Max. Allowable Case Temperature

Vs. Average Forward Current

90

IF = 30 A

80

IF = 15 A

70

60

(AV)

(A)

90
80

RMS Limit

70
60

DC

50
40
30
20

Average Power Loss ( Watts )

10

0

0 5 10 15 20 25 30 35 40 45

Average Forward Current - IF

D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5

(A)

(AV)

Fig. 6 - Forward Power Loss Characteristics

1200

V = 200V

R

T = 125˚C

J

T = 25˚C

J

1000

IF = 30 A
IF = 15 A

800
50
40

trr ( ns)

30
20

V = 200V

R

10

T = 125˚C

J

T = 25˚C

J

0

100 1000

di

/dt (A/µs )

F

Fig. 7 - Typical Reverse Recovery vs. di

(3) Formula used: TC = TJ - (Pd + Pd

Pd = Forward Power Loss = I

Pd

= Inverse Power Loss = VR1 x IR (1 - D); IR @ V

REV

F(AV)

REV

x VFM @ (I

4

) x R

thJC

;

F(AV)

/dt

F

/ D) (see Fig. 6);

= rated V

R1

600

Qrr ( nC )

400

200

0

100 1000

di F /dt (A/µs )

Fig. 8 - Typical Stored Charge vs. di

R

/dt

F

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Reverse Recovery Circuit

V = 200V

R

0.01

Ω

L = 70µH

D.U.T.

30ETH06, 30ETH06S, 30ETH06-1

Bulletin PD-20748 rev. D 08/01

diF /dt

dif/dt
ADJUST

G

Fig. 9- Reverse Recovery Parameter Test Circuit

I

F

t

a

0

1

diF /dt

di /dt

f

1. diF/dt - Rate of change of current through zero
crossing

2. I

- Peak reverse recovery current

RRM

3. t

- Reverse recovery time measured from zero

rr

crossing point of negative going IF to point where
a line passing through 0.75 I
extrapolated to zero current

RRM

and 0.50 I

RRM

3

2

D

IRFP250

S

t

rr

t

b

Q

I

RRM

0.5

di(rec)M/dt

0.75

I

RRM

4. Qrr - Area under curve defined by t
and I

RRM

Q

rr

5. di

/ dt - Peak rate of change of

(rec) M

current during t b portion of t

I

=

rr

RRM

t rr x I

4

5

rr

RRM

2

rr

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Fig. 10 - Reverse Recovery Waveform and Definitions

5

30ETH06, 30ETH06S, 30ETH06-1

N

C

Bulletin PD-20748 rev. D 08/01

Outline Table

10.54 (0.41)

15.24 (0.60)

14.84 (0.58)

14.09 (0.55)

13.47 (0.53)

4.57 (0.18)

4.32 (0.17)

MAX.

1

1.40 (0.05)

1.15 (0.04)

1

TERM 2

3

2.04 (0.080) MAX.

0.94 (0.04)

0.69 (0.03)

3

5.08 (0.20) REF.

3.78 (0.15)

3.54 (0.14)

2.92 (0.11)

2.54 (0.10)

DIA.

3.96 (0.16)

3.55 (0.14)

0.61 (0.02) MAX.

6.48 (0.25)

6.23 (0.24)

1.32 (0.05)

1.22 (0.05)

2°

0.10 (0.004)

2.89 (0.11)

2.64 (0.10)

athode

Base

Cathode

1

Conforms to JEDEC Outline TO-220AC

Dimensions in millimeters and (inches)

Anode

3

Modified JEDEC outline TO-262

Dimensions in millimeters and (inches)

2

1

/C

3

Anode

NC

6

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Outline Table

N

30ETH06, 30ETH06S, 30ETH06-1

Bulletin PD-20748 rev. D 08/01

10.16 (0.40)
REF.

2.61 (0.10)

2.32 (0.09)

8.89 (0.35)

REF.

0.93 (0.37)

2X

0.69 (0.27)

5.08 (0.20) REF.

6.47 (0.25)

6.18 (0.24)

4.57 (0.18)

4.32 (0.17)

0.61 (0.02) MAX.

15.49 (0.61)

14.73 (0.58)

3X

93°

1.40 (0.055)

1.14 (0.045)

13

2

Ordering Information Table

4.69 (0.18)

4.20 (0.16)

1.32 (0.05)

1.22 (0.05)

5.28 (0.21)

4.78 (0.19)

0.55 (0.02)

0.46 (0.02)

MINIMUM RECOMMENDED FOOTPRINT

8.89 (0.35)

3.81 (0.15)

2.08 (0.08)

2X

11.43 (0.45)

17.78 (0.70)

2.54 (0.10)

2X

Conforms to JEDEC Outline D2PAK

Dimensions in millimeters and (inches)

/C

Base

Cathode

1

2

3

Anode

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Device Code

30 E T H 06 - 1

1 5

243

1 - Current Rating (30 = 30A)

2 - E = Single Diode

3 - T = TO-220, D2Pak

4 - H = HyperFast Recovery

5 - Voltage Rating (06 = 600V)

6 - "-1" = TO-262 Option

S= D2Pak
None = TO-220AC

6

7

30ETH06, 30ETH06S, 30ETH06-1

Bulletin PD-20748 rev. D 08/01

This product has been designed and qualified for Industrial Level.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]

8

Data and specifications subject to change without notice.

Qualification Standards can be found on IR's Web site.

TAC Fax: [phone]

Visit us at www.irf.com for sales contact information. 08/01

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