Bulletin PD-20748 rev. D 08/01
30ETH06
30ETH06S 30ETH06-1
Hyperfast Rectifier
Features |
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trr = 28ns typ. |
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Hyperfastfast Recovery Time |
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Low Forward Voltage Drop |
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IF(AV) = 30Amp |
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Low Leakage Current |
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• 175°C Operating Junction Temperature |
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VR = 600V |
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• Dual Diode Center Tap |
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Description/ Applications |
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State of |
the art Hyperfast recovery rectifiers |
designed with optimized performance of forward voltage drop, |
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Hyperfast |
recover time, and soft recovery. |
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The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics.
These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling diodes.
The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.
Absolute Maximum Ratings
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Parameters |
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Max |
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Units |
VRRM |
Peak Repetitive Reverse Voltage |
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600 |
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V |
IF(AV) |
Average Rectifier Forward Current |
@ TC = 103°C |
30 |
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A |
IFSM |
Non Repetitive Peak Surge Current |
@ TJ = 25°C |
200 |
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TJ, TSTG |
Operating Junction and Storage Temperatures |
- 65 to 175 |
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°C |
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Case Styles |
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30ETH06 |
30ETH06S |
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30ETH06-1 |
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Base |
Base |
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2 |
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Cathode |
Cathode |
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2 |
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1 |
3 |
1 |
3 |
1 |
3 |
Cathode |
Anode |
N/C |
Anode |
N/C |
Anode |
TO-220AC |
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D2PAK |
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TO-262 |
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www.irf.com |
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30ETH06, 30ETH06S, 30ETH06-1
Bulletin PD-20748 rev. D 08/01
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
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Parameters |
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Typ |
Max |
Units |
Test Conditions |
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VBR, Vr |
Breakdown Voltage, |
600 |
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V |
IR = 100µA |
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Blocking Voltage |
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VF |
Forward Voltage |
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2.0 |
2.6 |
V |
IF = 30A, TJ = 25°C |
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1.34 |
1.75 |
V |
IF = 30A, TJ = 150°C |
IR |
Reverse Leakage Current |
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0.3 |
50 |
µA |
VR = VR Rated |
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60 |
500 |
µA |
TJ = 150°C, VR = VR Rated |
CT |
Junction Capacitance |
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33 |
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pF |
VR = 600V |
LS |
Series Inductance |
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8.0 |
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nH |
Measured lead to lead 5mm from package body |
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
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Parameters |
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Typ |
Max |
Units |
Test Conditions |
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trr |
Reverse Recovery Time |
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28 |
35 |
ns |
IF = 1.0A, diF/dt = 50A/µs, VR = 30V |
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31 |
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TJ = 25°C |
IF = 30A |
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77 |
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TJ = 125°C |
VR = 200V |
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diF /dt = 200A/µs |
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IRRM |
Peak Recovery Current |
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3.5 |
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A |
TJ = 25°C |
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7.7 |
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TJ = 125°C |
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Qrr |
Reverse Recovery Charge |
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65 |
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nC |
TJ = 25°C |
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345 |
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TJ = 125°C |
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Thermal - Mechanical Characteristics
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Parameters |
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Typ |
Max |
Units |
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TJ |
Max. Junction Temperature Range |
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- 65 |
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175 |
°C |
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TStg |
Max. Storage Temperature Range |
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- 65 |
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175 |
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RthJC |
Thermal Resistance, Junction to Case |
Per Leg |
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0.7 |
1.1 |
°C/W |
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RthJA ! |
Thermal Resistance, Junction to Ambient |
Per Leg |
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70 |
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RthCS" |
Thermal Resistance, Case to Heatsink |
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0.2 |
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Wt |
Weight |
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2.0 |
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g |
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0.07 |
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(oz) |
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Mounting Torque |
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6.0 |
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12 |
Kg-cm |
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5.0 |
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10 |
lbf.in |
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! Typical Socket Mount
"#Mounting Surface, Flat, Smooth and Greased
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30ETH06, 30ETH06S, 30ETH06-1 |
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Bulletin PD-20748 |
rev. D 08/01 |
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1000 |
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1000 |
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Tj = 175˚C |
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<![if ! IE]> <![endif]>(µA) |
100 |
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150˚C |
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10 |
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125˚C |
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<![if ! IE]> <![endif]>R |
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<![if ! IE]> <![endif]>- I |
1 |
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100˚C |
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<![if ! IE]> <![endif]>Current |
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F100 |
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0.1 |
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<![if ! IE]> <![endif]>Reverse |
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25˚C |
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<![if ! IE]> <![endif]>(A) |
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0.01 |
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<![if ! IE]> <![endif]>- I |
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0.001 |
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<![if ! IE]> <![endif]>Current |
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0 |
100 |
200 |
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500 |
600 |
<![if ! IE]> <![endif]>Forward |
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0.0001 |
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Vs. Reverse Voltage |
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Reverse Voltage - VR |
(V) |
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<![if ! IE]> <![endif]>Instantaneous |
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Fig. 2 - Typical Values Of Reverse Current |
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J |
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<![if ! IE]> <![endif]>C- |
1000 |
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T J = 175˚C |
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<![if ! IE]> <![endif]>(pF) |
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T J= 25˚C |
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10 |
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T |
= 150˚C |
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<![if ! IE]> <![endif]>T |
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<![if ! IE]> <![endif]>CapacitanceJunction |
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T |
= 25˚C |
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J |
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100 |
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1 |
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10 |
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0.5 |
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1.5 |
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2.5 |
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3.5 |
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0 |
100 |
200 |
300 |
400 |
500 |
600 |
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Forward Voltage Drop - VFM (V) |
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Reverse Voltage - VR (V) |
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Fig.1 -Typical Forward Voltage Drop Characteristics |
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Fig.3-Typical Junction Capacitance |
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Vs. Reverse Voltage |
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10 |
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<![if ! IE]> <![endif]>(°C/W) |
1 |
D = 0.50 |
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<![if ! IE]> <![endif]>thJC |
D = 0.20 |
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<![if ! IE]> <![endif]>Z |
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D = 0.10 |
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PDM |
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<![if ! IE]> <![endif]>Impedance |
0.1 |
D = 0.05 |
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D = 0.02 |
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t1 |
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D = 0.01 |
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t 2 |
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<![if ! IE]> <![endif]>Thermal |
0.01 |
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Single Pulse |
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Notes: |
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(Thermal Resistance) |
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1. Duty factor D = |
t1/ t2 |
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2. Peak Tj = Pdm x ZthJC + Tc |
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0.001 |
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0.00001 |
0.0001 |
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0.01 |
0.1 |
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t1, Rectangular Pulse Duration (Seconds)
Fig.4 - Max. Thermal Impedance ZthJC Characteristics
www.irf.com |
3 |