20ETF..S Soft Recovery Series
Vishay High Power Products
Surface Mountable Fast
Soft Recovery Rectifier Diode, 20 A
FEATURES/DESCRIPTION
Base
common
cathode
+
2
The 20ETF..S soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
D2PAK (SMD-220)
1
--
Anode
3
Anode
This product series has been designed and qualified for
industrial level.
PRODUCT SUMMARY
VF at 10 A < 1.2 V
I
FSM
V
RRM
300 A
200 to 600 V
APPLICATIONS
• Output rectification and freewheeling in inverters,
choppers and converters
• Input rectifications where severe restrictions on conducted
EMI should be met
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
t
rr
T
J
Sinusoidal waveform 20 A
200 to 600 V
300 A
10 A, TJ = 25 °C 1.2 V
1 A, 100 A/µs 60 ns
Range - 40 to 150 °C
VOLTAGE RATINGS
V
, MAXIMUM PEAK
PART NUMBER
20ETF02S 200 300
20ETF06S 600 700
RRM
REVERSE VOLTAGE
V
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
V
I
RRM
AT 150 °C
mA
5 20ETF04S 400 500
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current
2
Maximum I
Maximum I
Document Number: 93143 For technical questions, contact: diodes-tech@vishay.com
Revision: 22-Oct-08 1
t for fusing I2t
2
√ t for fusing I 2√ t t = 0.1 to 10 ms, no voltage reapplied 4420 A 2√ s
F(AV)
I
FSM
TC = 97 °C, 180° conduction half sine wave 20
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 300
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied 442
applied 250
RRM
applied 316
RRM
A
2
A
s
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20ETF..S Soft Recovery Series
Vishay High Power Products
Surface Mountable Fast
Soft Recovery Rectifier Diode, 20 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
Forward slope resistance r
Threshold voltage V
Maximum reverse leakage current I
F(TO)
RM
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Reverse recovery time t
Reverse recovery current I
rr
rr
Reverse recovery charge Q
Snap factor S Typical 0.6
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance
junction to ambient (PCB mount)
Soldering temperature T
Approximate weight
Marking device Case style D
Note
(1)
When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
, T
T
J
R
thJC
R
thJA
20 A, TJ = 25 °C 1.30
60 A, T
= 25 °C 1.67
J
t
12.5 mΩ
TJ = 150 °C 0.9 V
rr
Stg
TJ = 25 °C
T
= 150 °C 5.0
J
IF at 20 Apk
100 A/µs
25 °C
V
= Rated V
R
RRM
160 ns
10 A
1.25 µC
- 40 to 150 °C
DC operation 0.9
(1)
S
240 °C
0.07 oz.
2
PAK (SMD-220)
0.1
I
FM
t
rr
t
atb
dir
dt
I
RM(REC)
40
2g
20ETF02S
20ETF04S
20ETF06S
V
mA
Q
°C/W
t
rr
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Document Number: 93143
2 Revision: 22-Oct-08
20ETF..S Soft Recovery Series
150
140
130
120
110
100
Temperature (°C)
90
Maximum Allowable Case
80
70
06
150
140
130
120
Surface Mountable Fast
Soft Recovery Rectifier Diode, 20 A
20ETF.. Series
(DC) = 0.9 K/W
R
thJC
Ø
Conduction angle
60°
30°
28
4
12 14
10 22
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
20ETF.. Series
(DC) = 0.9 K/W
R
thJC
Conduction period
120°
90°
16 18 20
Ø
180°
45
40
35
30
25
20
15
Power Loss (W)
10
Maximum Average Forward
5
0
0
Fig. 4 - Forward Power Loss Characteristics
300
250
200
Vishay High Power Products
DC
180°
120°
90°
60°
30°
RMS limit
10 20 5
15
Average Forward Current (A)
At any rated load condition and with
rated V
applied following surge.
RRM
Ø
Conduction period
20ETF.. Series
= 150 °C
T
J
25
30
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
35
110
100
Temperature (°C)
Maximum Allowable Case
90
80
30°
60°
90°
120°
53 0
02 5
15
10 20
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
35
30
25
20
15
Power Loss (W)
10
5
Maximum Average Forward
0
0
180°
120°
90°
60°
30°
RMS limit
10 15 5
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
180°
DC
Ø
Conduction angle
20ETF.. Series
= 150 °C
T
J
20
150
Forward Current (A)
Peak Half Sine Wave
100
20ETF.. Series
50
35
1 10 100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
550
500
450
400
350
300
250
200
Forward Current (A)
Peak Half Sine Wave
150
100
50
25
0.001 0.01 1
Maximum non-repetitive surge current
versus pulse train duration.
Initial TJ = 150 °C
No voltage reapplied
Rated V
20ETF.. Series
0.1
RRM
reapplied
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 93143 For technical questions, contact: diodes-tech@vishay.com
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Revision: 22-Oct-08 3
20ETF..S Soft Recovery Series
Vishay High Power Products
1000
100
10
Instantaneous Forward Current (A)
1
012 5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
0.20
0.15
0.10
- Maximum Reverse
0.05
Recovery Time (µs)
rr
t
0
0 200 400 600 800 1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, T
TJ = 25 °C
T
IFM = 30 A
IFM = 20 A
= 150 °C
J
20ETF.. Series
34
20ETF.. Series
= 25 °C
T
J
IFM = 10 A
IFM = 5 A
IFM = 1 A
Surface Mountable Fast
Soft Recovery Rectifier Diode, 20 A
4.0
20ETF.. Series
= 25 °C
J
3.5
3.0
2.5
2.0
1.5
- Maximum Reverse
1.0
rr
Recovery Charge (µC)
Q
0.5
Fig. 10 - Recovery Charge Characteristics, T
10
- Maximum Reverse
rr
Recovery Charge (µC)
Q
Fig. 11 - Recovery Charge Characteristics, T
= 25 °C
T
J
0
0 200 400 600 800 1000
dI/dt - Rate of Fall of Forward Current (A/µs)
20ETF.. Series
9
= 150 °C
T
J
8
7
6
5
4
3
2
1
0
0 200 400 600 800 1000
dI/dt - Rate of Fall of Forward Current (A/µs)
IFM = 30 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
IFM = 30 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
= 25 °C
J
= 150 °C
J
- Maximum Reverse
rr
t
0.5
0.4
0.3
0.2
Recovery Time (µs)
0.1
0
0 200 400 600 800 1000
20ETF.. Series
= 150 °C
T
J
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, T
IFM = 30 A
= 20 A
I
FM
I
= 10 A
FM
I
= 5 A
FM
= 1 A
I
FM
= 150 °C
J
70
20ETF.. Series
60
50
40
30
20
- Maximum Reverse
Recovery Current (A)
rr
I
10
= 25 °C
T
J
0
0 200 400 600 800 1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, T
IFM = 30 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
= 25 °C
J
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Document Number: 93143
4 Revision: 22-Oct-08
20ETF..S Soft Recovery Series
Surface Mountable Fast
Vishay High Power Products
Soft Recovery Rectifier Diode, 20 A
100
20ETF.. Series
= 150 °C
T
J
80
60
40
- Maximum Reverse
Recovery Current (A)
rr
20
I
0
0 200 400 600 800 1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
10
IFM = 30 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
Steady state v alu e
(DC operation)
1
0.1
0.01
- Transient Thermal Impedance (K/W)
thJC
Z
Single pu lse
Fig. 14 - Thermal Impedance Z
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Square Wave Pulse Duration (s)
Characteristics
thJC
20ETF.. Series
1 0.0001 0.001 0.01 0.1
Document Number: 93143 For technical questions, contact: diodes-tech@vishay.com
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Revision: 22-Oct-08 5
20ETF..S Soft Recovery Series
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
20 E T F 06 S TRL -
1 - Current rating (20 = 20 A)
2 - Circuit configuration:
E = Single diode
3 - Package:
T = D
4 - Type of silicon:
F = Fast soft recovery rectifier
5 - Voltage code x 100 = V
6 - S = Surface mountable
7 -
8 -
Surface Mountable Fast
Soft Recovery Rectifier Diode, 20 A
5 13 24678
2
PAK (TO-220AC)
02 = 200 V
RRM
None = Tube
TRR = Tape and reel (right oriented)
TRL = Tape and reel (left oriented)
None = Standard production
PbF = Lead (Pb)-free
04 = 400 V
06 = 600 V
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95046
Part marking information http://www.vishay.com/doc?95054
Packaging information http://www.vishay.com/doc?95032
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
6 Revision: 22-Oct-08
Document Number: 93143
DIMENSIONS in millimeters and inches
Outline Dimensions
Vishay High Power Products
D2PAK
Conforms to JEDEC outline D
(2)(3)
E
(3)
L1
D
L2
2 x
Lead assignments
Diodes
1. - Anode (tw o die)/open (one die)
2., 4. - Cathode
3. - Anode
4
13 2
BB
e
2
H
2 x b 2
2 x b
0.010
PAK (SMD-220)
A
Detail A
(2)
C
MM
A
Lead tip
B
A
c2
AA
A
c
M
± 0.004
B
Gau ge
0° to 8 °
plane
L3
B
L
L4
Detail “A”
Rotated 90 °CW
Scale: 8 :1
(E)
E1
V iew A - A
A1
(3)
(D1)
17.90 (0.70)
15.00 (0.625)
2.32
(0.08 )
Plating
Seating
plane
2.64 (0.103)
2.41 (0.096)
(3)
H
B
Pad layout
11.00
MIN .
(0.43)
MIN .
(4)
b 1, b 3
(c)
(b , b 2)
Section B - B and C - C
Scale: N one
9.65
(0.38 )
3.81
(0.15)
c1
MIN .
MIN .
Base
Metal
(4)
SYMBOL
MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
NOTES SYMBOL
MILLIMETERS INCHES
NOTES
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5 M-1994
(2)
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3)
Thermal pad contour optional within dimension E, L1, D1 and E1
(4)
Dimension b1 and c1 apply to base metal only
(5)
Datum A and B to be determined at datum plane H
(6)
Controlling dimension: inch
(7)
Outline conforms to JEDEC outline TO-263AB
Document Number: 95046 For technical questions concerning discrete products, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 31-Mar-09 For technical questions concerning module products, contact: ind-modules@vishay.com
1
D2PAK
Part Marking Information
Vishay High Power Products
Assemb ly
lot code
xxxxxxS
V PYWWXA
802 4
Part nu mb er
Produ ct v ersion (optional):
P = Lead (Pb )-free
N one = Standard
Date code:
Year 0 = 2000
Week 02
Line X
Child lot A
Example: This is a xxxxxxS with
assembly lot code 8024,
assembled on WW 02, 2000
Document Number: 95054 For technical questions concerning discrete products, contact: diodes-tech@vishay.com
Revision: 17-Oct-08 For technical questions concerning module products, contact: ind-modules@vishay.com
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1
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Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
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therein, which apply to these products.
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Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1