Vishay 20ETF..SPbF Soft Recovery Series Data Sheet

20ETF..SPbF Soft Recovery Series

Fast Soft Recovery

Rectifier Diode, 20 A

Vishay High Power Products

FEATURES/DESCRIPTION

D2PAK (SMD-220)

Base

common

cathode

+

1

--

Anode

2

3
Anode

The 20ETF..SPbF fast soft recovery rectifier
series has been optimized for combined short
reverse recovery time and low forward voltage
drop.

The glass passivation ensures stable reliable
operation in the most severe temperature and
power cycling conditions.

This product series has been designed and
qualified for industrial level.

Compliant to RoHS directive 2002/95/EC.

Halogen-free according to IEC 61249-2-21 definition.

PRODUCT SUMMARY

VF at 20 A < 1.31 V

V

I

FSM

RRM

355 A

800 V to 1200 V

APPLICATIONS

• Output rectification and freewheeling in inverters,
choppers and converters

• Input rectifications where severe restrictions on conducted
EMI should be met

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

RRM

I

FSM

V

F

t

rr

T

J

Sinusoidal waveform 20 A

800 to 1200 V

355 A

20 A, TJ = 25 °C 1.31 V

1 A, 100 A/µs 95 ns

Range - 40 to 150 °C

VOLTAGE RATINGS

V

, MAXIMUM PEAK

V

RRM

PART NUMBER

20ETF08SPbF 800 900

20ETF12SPbF 1200 1300

REVERSE VOLTAGE

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

I

RRM

AT 150 °C

mA

620ETF10SPbF 1000 1100

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current I

Maximum peak one cycle
non-repetitive surge current

Maximum I

Maximum I

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94099 For technical questions, contact: [e-mail]
Revision: 17-Sep-09 1

2

t for fusing I2t

2

√t for fusing I2√t t = 0.1 ms to 10 ms, no voltage reapplied 6350 A2√s

F(AV)

I

FSM

TC = 97 °C, 180° conduction half sine wave 20

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied 355

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied 635

applied 300

RRM

applied 450

RRM

A

2

A

s

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20ETF..SPbF Soft Recovery Series

Vishay High Power Products

Fast Soft Recovery

Rectifier Diode, 20 A

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage drop V

FM

Forward slope resistance r

Threshold voltage V

Maximum reverse leakage current I

F(TO)

RM

RECOVERY CHARACTERISTICS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Reverse recovery time t

Reverse recovery current I

rr

rr

Reverse recovery charge Q

Snap factor S Typical 0.6

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
junction to ambient (PCB mount)

Soldering temperature T

Approximate weight

Marking device Case style D

Note

(1)

When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994

T

, T

J

R

thJC

R

thJA

S

20 A, TJ = 25 °C 1.31 V

t

rr

Stg

TJ = 150 °C

TJ = 25 °C

T

= 150 °C 6

J

IF at 20 Apk

25 A/µs
25 °C

V

= Rated V

R

RRM

400 ns

6.1 A

1.7 µC

11.88 mΩ

0.93 V

- 40 to 150 °C

DC operation 0.9

(1)

240 °C

0.07 oz.

2

PAK (SMD-220)

0.1

I

FM

t

rr

t

atb

dir

dt

I

RM(REC)

62

2g

20ETF08S

20ETF10S

20ETF12S

mA

Q

°C/W

t

rr

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Document Number: 94099

2 Revision: 17-Sep-09

20ETF..SPbF Soft Recovery Series

150

140

130

120

Temperature (°C)

110

Maximum Allowable Case

100

150

140

130

20ETF.. Series

(DC) = 0.9 K/W

R

thJC

Conduction angle

30°

60°

90°

120°

5

0

10 25

15

Average Forward Current (A)

Fig. 1 - Current Rating Characteristics

20ETF.. Series

(DC) = 0.9 K/W

R

thJC

Conduction period

Fast Soft Recovery

Rectifier Diode, 20 A

Ø

180°

20

Ø

45

40

35

30

25

20

15

Power Loss (W)

10

Maximum Average Forward

350

300

250

200

Vishay High Power Products

180°
120°
90°
60°
30°

RMS limit

Conduction period

15

20ETF.. Series
T

20

5

0

0

10 255

Average Forward Current (A)

Fig. 4 - Forward Power Loss Characteristics

At any rated load condition and with
rated V

applied following surge.

RRM

DC

Ø

= 150 °C

J

30

Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

35

120

Temperature (°C)

110

Maximum Allowable Case

100

35

30

25

20

15

Power Loss (W)

10

Maximum Average Forward

5

0

60°

90°

30°

530

025

10 20

120°

180°

15

DC

35

Average Forward Current (A)

Fig. 2 - Current Rating Characteristics

180°
120°
90°
60°
30°

RMS limit

Ø

Conduction angle

20ETF.. Series
T

= 150 °C

J

0

10 155

20

25

Average Forward Current (A)

Fig. 3 - Forward Power Loss Characteristics

150

Forward Current (A)

Peak Half Sine Wave

100

50

400

350

300

250

200

150

Forward Current (A)

Peak Half Sine Wave

100

50

20ETF.. Series

1 10 100

Number of Equal Amplitude Half Cycle

Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

Maximum non-repetitive surge current
versus pulse train duration.

Initial TJ = 150 °C
No voltage reapplied
Rated V

20ETF.. Series

0.01 0.1 1

RRM

reapplied

Pulse Train Duration (s)

Fig. 6 - Maximum Non-Repetitive Surge Current

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Revision: 17-Sep-09 3

20ETF..SPbF Soft Recovery Series

Vishay High Power Products

Instantaneous Forward Current (A)

- Maximum Reverse

rr

t

0.7

0.6

0.5

0.4

0.3

0.2

Recovery Time (µs)

0.1

0

0 50 100 150 200

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 8 - Recovery Time Characteristics, T

20ETF.. Series

= 25 °C

T

J

Fast Soft Recovery

Rectifier Diode, 20 A

1000

100

TJ = 25 °C

= 150 °C

T

10

1

0.5 1.5 2.5 3.5

0 1.0 2.0

Instantaneous Forward Voltage (V)

Fig. 7 - Forward Voltage Drop Characteristics

I

= 30 A

FM

= 20 A

I

FM

IFM = 10 A

I

= 5 A

FM

= 1 A

I

FM

= 25 °C

J

J

20ETF.. Series

- Maximum Reverse

rr

Recovery Charge (µC)

Q

3.0 4.0

6

20ETF.. Series

= 25 °C

T

J

5

4

3

2

1

0

0 50 100 150 200

IFM = 30 A

IFM = 20 A

IFM = 10 A

IFM = 5 A

IFM = 1 A

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 10 - Recovery Charge Characteristics, T

= 25 °C

J

1.2

0.9

0.6

- Maximum Reverse

0.3

Recovery Time (µs)

rr

t

0

0 50 100 150 200

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 9 - Recovery Time Characteristics, T

20ETF.. Series

= 150 °C

T

J

IFM = 30 A

= 20 A

I

FM

I

= 10 A

FM

= 5 A

I

FM

= 1 A

I

FM

= 150 °C

J

10

20ETF.. Series

= 150 °C

T

J

8

6

4

- Maximum Reverse

rr

Recovery Charge (µC)

Q

2

0

0 50 100 150 200

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 11 - Recovery Charge Characteristics, T

IFM = 30 A

IFM = 20 A

IFM = 5 A

IFM = 10 A

IFM = 1 A

= 150 °C

J

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Document Number: 94099

4 Revision: 17-Sep-09

20ETF..SPbF Soft Recovery Series

Fast Soft Recovery

Vishay High Power Products

Rectifier Diode, 20 A

- Maximum Reverse
Recovery Current (A)

rr

I

25

20ETF.. Series

= 25 °C

T

J

20

15

10

5

0

0 50 100 150 200

IFM = 30 A

IFM = 20 A

IFM = 10 A

IFM = 5 A

IFM = 1 A

dI/dt - Rate of Fall of Forward Current (A/µs)

Fig. 12 - Recovery Current Characteristics, TJ = 25 °C Fig. 13 - Recovery Current Characteristics, TJ = 150 °C

1

- Maximum Reverse
Recovery Current (A)

rr

I

35

20ETF.. Series
T

30

25

20

15

10

= 150 °C

J

5

0

0 50 100 150 200

IFM = 30 A

dI/dt - Rate of Fall of Forward Current (A/µs)

Steady state value

(DC operation)

IFM = 20 A

IFM = 10 A

IFM = 5 A

IFM = 1 A

0.1

Single pulse

0.01

- Transient Thermal Impedance (K/W)

thJC

Z

Fig. 14 - Thermal Impedance Z

D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08

Square Wave Pulse Duration (s)

Characteristics

thJC

20ETF.. Series

10.0001 0.001 0.01 0.1

Document Number: 94099 For technical questions, contact: [e-mail]

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Revision: 17-Sep-09 5

20ETF..SPbF Soft Recovery Series

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

20 E T F 12 S TRL PbF

1 - Current rating (20 = 20 A)

2 - Circuit configuration:

E = Single diode

3 - Package:

T = D

4 - Type of silicon:

F = Fast soft recovery rectifier

5 - Voltage code x 100 = V

6 - S = Surface mountable

7 -

8 -

Fast Soft Recovery

Rectifier Diode, 20 A

51324678

2

PAK (TO-220AC)

RRM

None = Tape

TRR = Tape and reel (right oriented)

TRL = Tape and reel (left oriented)

None = Standard production

PbF = Lead (Pb)-free

08 = 800 V
10 = 1000 V
12 = 1200 V

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6 Revision: 17-Sep-09

Document Number: 94099

DIMENSIONS in millimeters and inches

Outline Dimensions

Vishay High Power Products

D2PAK

Conforms to JEDEC outline D

(2)(3)

E

(3)

L1

D

L2

2 x

Lead assignments

Diodes

1. - Anode (two die)/open (one die)

2., 4. - Cathode

3. - Anode

4

132

BB

e

2

2 x b2

2 x b

PAK (SMD-220)

A

Detail A

H

(2)

C

MM

0.010

A

Lead tip

B

A

c2

AA

A

c

M

± 0.004

B

Gauge

0° to 8°

plane

L3

B

L

L4

Detail “A”

Rotated 90 °CW

Scale: 8:1

(E)

E1

View A - A

A1

(3)

(D1)

17.90 (0.70)

15.00 (0.625)

2.32

(0.08)

Plating

Seating

plane

2.64 (0.103)

2.41 (0.096)

(3)

H

B

Pad layout

11.00
MIN.

(0.43)

MIN.

(4)

b1, b3

(c)

(b, b2)

Section B - B and C - C

Scale: None

9.65

(0.38)

3.81

(0.15)

c1

MIN.

MIN.

Base
Metal

(4)

SYMBOL

MILLIMETERS INCHES

MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

NOTES SYMBOL

MILLIMETERS INCHES

NOTES

A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3

A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3

b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3

b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC

b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625

b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110

c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3

c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070

c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC

D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208

Notes

(1)

Dimensioning and tolerancing per ASME Y14.5 M-1994

(2)

Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body

(3)

Thermal pad contour optional within dimension E, L1, D1 and E1

(4)

Dimension b1 and c1 apply to base metal only

(5)

Datum A and B to be determined at datum plane H

(6)

Controlling dimension: inch

(7)

Outline conforms to JEDEC outline TO-263AB

Document Number: 95046 For technical questions concerning discrete products, contact: [e-mail]

www.vishay.com

Revision: 31-Mar-09 For technical questions concerning module products, contact: [e-mail]

1

D2PAK

Part Marking Information

Vishay High Power Products

Assembly
lot code

xxxxxxS

V PYWWXA

8024

Part number

Product version (optional):
P = Lead (Pb)-free
None = Standard
Date code:
Year 0 = 2000
Week 02
Line X
Child lot A

Example: This is a xxxxxxS with
assembly lot code 8024,
assembled on WW 02, 2000

Document Number: 95054 For technical questions concerning discrete products, contact: [e-mail]
Revision: 17-Oct-08 For technical questions concerning module products, contact: [e-mail]

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1

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

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Revision: 18-Jul-08 1