Vishay 201CNQ050PBF Data Sheet

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TO-2 44

PRODUCT SUMMARY

I

F(AV)

V

R

Schottky Rectifier, 200 A

FEATURES

Lug
terminal
anode 1

Base common cathode

200 A

50 V

terminal
anode 2

Lug

• 175 °C TJ operation

• Center tap module

• Low forward voltage drop

• High frequency operation

• Guard ring for enhanced ruggedness and long term
reliability

• Designed and qualified for industrial level

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

DESCRIPTION

The VS-201CNQ050PbF center tap Schottky rectifier
module has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows
for reliable operation up to 175 °C junction temperature.
Typical applications are in high current switching power
supplies, converters, freewheeling diodes, welding, and
reverse battery protection.

VS-201CNQ050PbF

Vishay Semiconductors

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

I

FSM

V

T

RRM

F

J

Rectangular waveform 200 A

50 V

tp = 5 μs sine 16 000 A

100 Apk, TJ = 125 °C (per leg) 0.58 V

Range - 55 to 175 °C

VOLTAGE RATINGS

PARAMETER SYMBOL 201CNQ050PbF UNITS

Maximum DC reverse voltage V

Maximum working peak reverse voltage V

R

RWM

50 V

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average
forward current
See fig. 5

Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7

Non-repetitive avalanche energy per leg E

Repetitive avalanche current per leg I

per device

per leg 100

I

I

F(AV)

FSM

AS

AR

50 % duty cycle at TC = 146 °C, rectangular waveform

5 µs sine or 3 µs rect. pulse

10 ms sine or 6 ms rect. pulse 2000

TJ = 25 °C, IAS = 17 A, L = 1 mH 145 mJ

Current decaying linearly to zero in 1 μs
Frequency limited by T

maximum VA = 1.5 x VR typical

J

Following any rated
load condition and with
rated V

RRM

applied

200

A

16 000

A

20 A

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VS-201CNQ050PbF

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ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

100 A

Maximum forward voltage drop per leg
See fig. 1

V

FM

200 A 0.81

(1)

100 A

200 A 0.71

Maximum reverse leakage current per leg
See fig. 2

I

RM

Maximum junction capacitance per leg C

Typical series inductance per leg L

T

S

TJ = 25 °C

(1)

= 125 °C 90

T

J

VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 5200 pF

From top of terminal hole to mounting plane 7.0 nH

Maximum voltage rate of change dV/dt Rated V

R

T

= 25 °C

J

= 125 °C

T

J

= Rated V

V

R

Note

(1)

Pulse width < 300 μs, duty cycle < 2 %

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

R

J

, T

thJC

thCS

Stg

Maximum junction and storage temperature range T

Thermal resistance, junction to case

per leg

Thermal resistance, case to heatsink R

Weight -

Mounting torque 35.4 (4) - 53.1 (6)

Mounting torque center hole 30 (3.4) - 40 (4.6)

Terminal torque 30 (3.4) - 44.2 (5)

Vertical pull - - 80

2" lever pull - - 35

- 55 - 175 °C

- - 0.38

-0.10-

Vishay Semiconductors

0.67

0.58

10

R

10 000 V/µs

°C/Wper module - - 0.19

68

2.4 oz.

-

lbf in

(N m)

lbf in

V

mA

g

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1

10

100

I

F

- Instantaneous Forward

Current (A)

V

FM

- Forward Voltage Drop (V)

0 0.4 0.8 1.2

1000

0.2 0.6 1.0

TJ = 175 °C
T

J

= 125 °C

T

J

= 25 °C

C

T

- Junction Capacitance (pF)

VR - Reverse Voltage (V)

0 20304050

1000

10

10 000

TJ = 25 °C

Z

thJC

- Thermal Impedance (°C/W)

0.001

0.01

0.1

1

t1 - Rectangular Pulse Duration (s)

0.00001 0.0001 0.001 0.01 0.1 1 10

Single pulse

(thermal resistance)

D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20

Fig. 1 - Maximum Forward Voltage Drop Characteristics

(Per Leg)

10 000

1000

100

10

1

0.1

0.01

- Reverse Current (mA)

R

I

0.001

0.0001

01020

515

V

- Reverse Voltage (V)

R

Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage (Per Leg)

VS-201CNQ050PbF

Vishay Semiconductors

TJ = 175 °C

TJ = 125 °C

TJ = 50 °C

TJ = 25 °C

30 45 50

25

4035

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)

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Fig. 4 - Maximum Thermal Impedance Z

3

Characteristics (Per Leg)

thJC

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Allowable Case Temperature (°C)

I

F(AV)

- Average Forward Current (A)

0 16060

90

100

120

150

180

20 100 120

130

160

40 14080

DC

See note (1)

Square wave (D = 0.50)
80 % rated V

R

applied

170

140

110

Fig. 5 - Maximum Allowable Case Temperature vs. Average

Forward Current (Per Leg)

10 000

VS-201CNQ050PbF

Vishay Semiconductors

90

D = 0.08

80

D = 0.17
D = 0.25

70

D = 0.33
D = 0.50

60

50

40

30

20

Average Power Loss (W)

10

0

0

25

I

- Average Forward Current (A)

F(AV)

DC

50 150

75

Fig. 6 - Forward Power Loss Characteristics (Per Leg)

100

RMS limit

125

Note

(1)

Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V

REV

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- Non-Repetitive Surge Current (A)

1000

I

FSM

10

100

1000

10 000

tp - Square Wave Pulse Duration (µs)

Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)

L

High-speed

switch

Freewheel

diode

40HFL40S02

= 25 V

V

d

+

x VFM at (I

F(AV)

D.U.T.

Current
monitor

) x R

REV

IRFP460

R

= 25 Ω

g

Fig. 8 - Unclamped Inductive Test Circuit

;

thJC

/D) (see fig. 6);

F(AV)

R

4

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Document Number: 93991

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1

- Average current rating (x 10)

- Vishay Semiconductors product

2

- Product silicon identification

3

- C = Circuit configuration

4

- N = Not isolated

5

- Q = Schottky rectifier diode

6

- Voltage rating (050 = 50 V)

7

8

- Lead (Pb)-free

Device code

51 32 4 6 7 8

20VS- 1 C N Q 050 PbF

ORDERING INFORMATION TABLE

VS-201CNQ050PbF

Vishay Semiconductors

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.comdoc?95021

Revision: 18-Jul-12

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Revision: 02-Oct-12

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Document Number: 91000