Vishay 201CNQ050PBF Data Sheet

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TO-2 44
PRODUCT SUMMARY
I
F(AV)
V
R
Schottky Rectifier, 200 A
FEATURES
Lug terminal anode 1
Base common cathode
200 A
50 V
terminal anode 2
Lug
• 175 °C TJ operation
• Center tap module
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term reliability
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
The VS-201CNQ050PbF center tap Schottky rectifier module has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in high current switching power supplies, converters, freewheeling diodes, welding, and reverse battery protection.
VS-201CNQ050PbF
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
Rectangular waveform 200 A
50 V
tp = 5 μs sine 16 000 A
100 Apk, TJ = 125 °C (per leg) 0.58 V
Range - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL 201CNQ050PbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
50 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current See fig. 5
Maximum peak one cycle non-repetitive surge current per leg See fig. 7
Non-repetitive avalanche energy per leg E
Repetitive avalanche current per leg I
per device
per leg 100
I
I
F(AV)
FSM
AS
AR
50 % duty cycle at TC = 146 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 2000
TJ = 25 °C, IAS = 17 A, L = 1 mH 145 mJ
Current decaying linearly to zero in 1 μs Frequency limited by T
maximum VA = 1.5 x VR typical
J
Following any rated load condition and with rated V
RRM
applied
200
A
16 000
A
20 A
Revision: 18-Jul-12
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Document Number: 93991
VS-201CNQ050PbF
www.vishay.com
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
100 A
Maximum forward voltage drop per leg See fig. 1
V
FM
200 A 0.81
(1)
100 A
200 A 0.71
Maximum reverse leakage current per leg See fig. 2
I
RM
Maximum junction capacitance per leg C
Typical series inductance per leg L
T
S
TJ = 25 °C
(1)
= 125 °C 90
T
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 5200 pF
From top of terminal hole to mounting plane 7.0 nH
Maximum voltage rate of change dV/dt Rated V
R
T
= 25 °C
J
= 125 °C
T
J
= Rated V
V
R
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
R
J
, T
thJC
thCS
Stg
Maximum junction and storage temperature range T
Thermal resistance, junction to case
per leg
Thermal resistance, case to heatsink R
Weight -
Mounting torque 35.4 (4) - 53.1 (6)
Mounting torque center hole 30 (3.4) - 40 (4.6)
Terminal torque 30 (3.4) - 44.2 (5)
Vertical pull - - 80
2" lever pull - - 35
- 55 - 175 °C
- - 0.38
-0.10-
Vishay Semiconductors
0.67
0.58
10
R
10 000 V/µs
°C/Wper module - - 0.19
68
2.4 oz.
-
lbf in
(N m)
lbf in
V
mA
g
Revision: 18-Jul-12
For technical questions within your region: DiodesAmericas@vishay.com
2
Document Number: 93991
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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1
10
100
I
F
- Instantaneous Forward
Current (A)
V
FM
- Forward Voltage Drop (V)
0 0.4 0.8 1.2
1000
0.2 0.6 1.0
TJ = 175 °C T
J
= 125 °C
T
J
= 25 °C
C
T
- Junction Capacitance (pF)
VR - Reverse Voltage (V)
0 20304050
1000
10
10 000
TJ = 25 °C
Z
thJC
- Thermal Impedance (°C/W)
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
0.00001 0.0001 0.001 0.01 0.1 1 10
Single pulse
(thermal resistance)
D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
10 000
1000
100
10
1
0.1
0.01
- Reverse Current (mA)
R
I
0.001
0.0001
01020
515
V
- Reverse Voltage (V)
R
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
VS-201CNQ050PbF
Vishay Semiconductors
TJ = 175 °C
TJ = 125 °C
TJ = 50 °C
TJ = 25 °C
30 45 50
25
4035
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Revision: 18-Jul-12
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 4 - Maximum Thermal Impedance Z
3
Characteristics (Per Leg)
thJC
Document Number: 93991
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Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
0 16060
90
100
120
150
180
20 100 120
130
160
40 14080
DC
See note (1)
Square wave (D = 0.50) 80 % rated V
R
applied
170
140
110
Fig. 5 - Maximum Allowable Case Temperature vs. Average
Forward Current (Per Leg)
10 000
VS-201CNQ050PbF
Vishay Semiconductors
90
D = 0.08
80
D = 0.17 D = 0.25
70
D = 0.33 D = 0.50
60
50
40
30
20
Average Power Loss (W)
10
0
0
25
I
- Average Forward Current (A)
F(AV)
DC
50 150
75
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
100
RMS limit
125
Note
(1)
Formula used: TC = TJ - (Pd + Pd Pd = Forward power loss = I Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V
REV
Revision: 18-Jul-12
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
- Non-Repetitive Surge Current (A)
1000
I
FSM
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
High-speed
switch
Freewheel
diode
40HFL40S02
= 25 V
V
d
+
x VFM at (I
F(AV)
D.U.T.
Current monitor
) x R
REV
IRFP460
R
= 25 Ω
g
Fig. 8 - Unclamped Inductive Test Circuit
;
thJC
/D) (see fig. 6);
F(AV)
R
4
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Document Number: 93991
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1
- Average current rating (x 10)
- Vishay Semiconductors product
2
- Product silicon identification
3
- C = Circuit configuration
4
- N = Not isolated
5
- Q = Schottky rectifier diode
6
- Voltage rating (050 = 50 V)
7
8
- Lead (Pb)-free
Device code
51 32 4 6 7 8
20VS- 1 C N Q 050 PbF
ORDERING INFORMATION TABLE
VS-201CNQ050PbF
Vishay Semiconductors
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.comdoc?95021
Revision: 18-Jul-12
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Document Number: 93991
Legal Disclaimer Notice
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Vishay
Disclaimer
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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Revision: 02-Oct-12
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Document Number: 91000
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