Vishay 201CNQ050PBF Data Sheet

Vishay 201CNQ050PBF Data Sheet

VS-201CNQ050PbF

www.vishay.com

Vishay Semiconductors

 

 

Schottky Rectifier, 200 A

Lug

Lug

terminal

terminal

anode 1

anode 2

TO-244

Base common cathode

PRODUCT SUMMARY

IF(AV)

200 A

VR

50 V

FEATURES

• 175 °C TJ operation

• Center tap module

• Low forward voltage drop

High frequency operation

Guard ring for enhanced ruggedness and long term reliability

Designed and qualified for industrial level

Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

DESCRIPTION

The VS-201CNQ050PbF center tap Schottky rectifier module has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in high current switching power supplies, converters, freewheeling diodes, welding, and reverse battery protection.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

 

 

 

 

IF(AV)

Rectangular waveform

200

A

VRRM

 

50

V

IFSM

tp = 5 μs sine

16 000

A

VF

100 Apk, TJ = 125 °C (per leg)

0.58

V

TJ

Range

- 55 to 175

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

201CNQ050PbF

UNITS

 

 

 

 

Maximum DC reverse voltage

VR

50

V

Maximum working peak reverse voltage

VRWM

 

 

ABSOLUTE MAXIMUM RATINGS

PARAMETER

 

SYMBOL

TEST CONDITIONS

 

VALUES

UNITS

 

 

 

 

 

 

 

 

 

Maximum average

per device

IF(AV)

50 % duty cycle at TC = 146 °C, rectangular waveform

 

200

 

forward current

 

 

 

A

per leg

 

100

See fig. 5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum peak one cycle

 

 

5 µs sine or 3 µs rect. pulse

 

Following any rated

 

16 000

 

non-repetitive surge current per leg

IFSM

 

 

load condition and with

 

 

A

 

 

 

 

See fig. 7

 

 

10 ms sine or 6 ms rect. pulse

 

rated VRRM applied

 

2000

 

Non-repetitive avalanche energy per leg

EAS

TJ = 25 °C, IAS = 17 A, L = 1 mH

 

 

145

mJ

Repetitive avalanche current per leg

IAR

Current decaying linearly to zero in 1 μs

 

20

A

Frequency limited by TJ maximum VA = 1.5 x VR typical

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Revision: 18-Jul-12

 

 

1

 

 

Document Number: 93991

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

VS-201CNQ050PbF

www.vishay.com

 

 

 

 

 

 

 

Vishay Semiconductors

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ELECTRICAL SPECIFICATIONS

 

 

 

 

 

 

 

 

 

 

 

 

PARAMETER

SYMBOL

 

 

 

TEST CONDITIONS

 

VALUES

UNITS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

100 A

 

TJ = 25 °C

 

0.67

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum forward voltage drop per leg

VFM (1)

 

200 A

 

 

0.81

 

V

 

 

 

 

 

 

 

 

 

See fig. 1

 

100 A

 

TJ = 125 °C

 

0.58

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

200 A

 

 

0.71

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum reverse leakage current per leg

IRM (1)

 

TJ = 25 °C

 

VR = Rated VR

 

10

 

mA

 

 

 

 

 

 

 

 

 

See fig. 2

 

TJ = 125 °C

 

 

90

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum junction capacitance per leg

CT

 

VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C

 

5200

 

pF

 

Typical series inductance per leg

LS

 

From top of terminal hole to mounting plane

 

7.0

 

nH

 

Maximum voltage rate of change

dV/dt

 

Rated VR

 

 

 

 

 

10 000

 

V/µs

 

Note

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(1) Pulse width < 300 μs, duty cycle < 2 %

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

THERMAL - MECHANICAL SPECIFICATIONS

 

 

 

 

 

 

 

 

 

PARAMETER

 

 

SYMBOL

 

MIN.

 

TYP.

 

 

MAX.

 

UNITS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum junction and storage temperature range

 

 

TJ, TStg

 

- 55

 

-

 

175

 

°C

 

Thermal resistance, junction to case

 

per leg

 

 

RthJC

 

-

 

-

 

0.38

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

per module

 

 

 

-

 

-

 

0.19

 

°C/W

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Thermal resistance, case to heatsink

 

 

 

RthCS

 

-

 

0.10

 

-

 

 

 

Weight

 

 

 

 

 

-

 

68

 

-

 

g

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.4

 

 

oz.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Mounting torque

 

 

 

 

 

35.4 (4)

 

-

 

53.1 (6)

 

lbf in

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Mounting torque center hole

 

 

 

 

 

30 (3.4)

 

-

 

40 (4.6)

 

 

 

 

 

 

 

 

 

 

(N m)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Terminal torque

 

 

 

 

 

30 (3.4)

 

-

 

44.2 (5)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Vertical pull

 

 

 

 

 

-

 

-

 

80

 

lbf in

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2" lever pull

 

 

 

 

 

-

 

-

 

35

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Revision: 18-Jul-12

2

Document Number: 93991

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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