Vishay 1N4148WS Schematic [ru]
www.vishay.com
Small Signal Fast Switching Diode
MARKING (example only)
X Y
22610
Bar = cathode marking
XY = type code
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
1N4148WS
Vishay Semiconductors
FEATURES
• Silicon epitaxial planar diode
• Fast switching diodes
• AEC-Q101 qualified
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101
qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PARTS TABLE
PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS
1N4148WS
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
Repetitive peak reverse voltage V
Average rectified current half wave
rectification with resistive load
Surge forward current t < 1 s and T
Power dissipation
Note
(1)
Valid provided that electrodes are kept at ambient temperature.
THERMAL CHARACTERISTICS (T
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
Junction temperature T
Storage temperature range T
Operating temperature range T
Note
(1)
Valid provided that electrodes are kept at ambient temperature
1N4148WS-E3-08 or 1N4148WS-E3-18
1N4148WS-HE3-08 or 1N4148WS-HE3-18
= 25 °C, unless otherwise specified)
amb
(1)
(1)
amb
(1)
f 50 Hz I
= 25 °C, unless otherwise specified)
Single diode A2 Tape and reel
= 25 °C I
j
F(AV)
FSM
P
R
R
RRM
tot
thJA
stg
op
75
100
150
350
200 mW
650 K/W
j
150 °C
- 65 to + 150 °C
- 55 to + 150 °C
V
mA
Rev. 2.0, 14-May-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 85751
www.vishay.com
17437
0
1
2
V
F
(V)
I
F
(mA)
10
-1
10
-2
1
10
10
2
10
3
Tj = 100 °C
T
j
= 25 °C
17438
f = 1 kHz
T
j
= 25 °C
IF (mA)
R
f
(Ω)
10
10
2
10
3
10
4
10
-2
10
-1
110
2
10
2
5
2
5
2
5
2
5
0
50
100
150
200
250
0 50 100 150 200
20324
T
amb
- Ambient Temperature (°C)
P
tot
- Power Dissipation (mW)
1N4148WS
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (T
= 25 °C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
Leakage current
V
= 20 V, Tj = 150 °C I
R
Diode capacitance V
= 10 mA V
F
I
= 100 mA V
F
V
= 20 V I
R
V
= 75 V I
R
= 100 V I
R
= VR = 0 V C
F
F
F
R
R
R
R
D
1V
1.2 V
25 nA
5
100
50
4pF
I
Tested with 50 mA pulses,
Voltage rise when switching ON
Reverse recovery time
TYPICAL CHARACTERISTICS (T
t
= 0.1 μs, rise time < 30 ns,
p
f
= (5 to 100) kHz
p
= 10 mA, iR = 1 mA, VR = 6 V,
I
F
R
= 100
L
= 25 °C, unless otherwise specified)
amb
V
fr
t
rr
2.5 V
4ns
μAV
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
Rev. 2.0, 14-May-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Fig. 1 - Forward Characteristics
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
T
= 25 °C
1.1
j
f = 1 MHz
1.0
)
R
0.9
(V
(0 V)
D
D
C
C
0.8
0.7
2086410
17440
VR (V)
Fig. 4 - Relative Capacitance vs. Reverse Voltage
2
Document Number: 85751
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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