g
RRM
查询1N4001G/L供应商
Vishay Lite–On Power Semiconductor
1.0A Glass Passivated Rectifier
Features
D
Glass passivated die construction
D
Diffused junction
D
High current capability and low forward
voltage drop
D
Surge overload rating to 30A peak
D
Plastic material – UL Recognition flammability
classification 94V–0
1N4001G/L–1N4007G/L
A – 405
DO – 41
14 451
Absolute Maximum Ratings
Tj = 25_C
Parameter Test
Type Symbol Value Unit
Conditions
Repetitive peak reverse voltage 1N4001 G/L V
=Working peak reverse voltage
=DC Blocking voltage
1N4002 G/L
1N4003 G/L
=V
=V
1N4004 G/L 400 V
1N4005 G/L 600 V
1N4006 G/L 800 V
1N4007 G/L 1000 V
Peak forward surge current I
Average forward current TA=75°C I
Junction and storage temperature range Tj=T
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=1A V
Reverse current TA=25°C I
TA=125°C I
Reverse recovery time IF=0.5A, IR=1A,
I
=0.25A
rr
Diode capacitance VR=4V, f=1MHz C
Thermal resistance junction to ambient R
F
R
R
t
rr
D
thJA
RRM
RWM
FSM
FAV
R
stg
50 V
100 V
200 V
30 A
1 A
–65...+175
1 V
5
50
2
8 pF
100 K/W
°
C
m
A
m
A
m
s
Rev . A2, 24-Jun-98 1 (4)
1N4001G/L–1N4007G/L
Vishay Lite–On Power Semiconductor
Characteristics (Tj = 25_C unless otherwise specified)
1.0
0.8
0.6
0.4
0.2
FAV
I – Average Forward Current ( A )
15551
0
40
60 80
T
amb
100
– Ambient Temperature ( °C )
120
140
160
Figure 1. Max. Average Forward Current vs.
Ambient Temperature
10
1.0
180
100
Tj = 25°C
f = 1 MHz
10
D
C – Diode Capacitance ( pF )
15554
1.0
1.0
10
VR – Reverse Voltage ( V )
100
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
100
T
= 125°C
m
j
10
0.1
F
I – Forward Current ( A )
= 25°C
T
j
IF Pulse Width = 300 µs
2% Duty Cycle
0.01
1.6
15552
0.6 0.8
1.0 1.2 1.4
VF – Forward Voltage ( V )
Figure 2. Typ. Forward Current vs. Forward Voltage
15553
I – Peak Forward Surge Current ( A )
FSM
30
20
10
0
1
8.3 ms Single Half–Sine–Wave
JEDEC method
10
Number of Cycles at 60 Hz
100
1.0
T
= 25°C
j
R
I – Reverse Current ( A )
0.1
0 20 40 60 80 100 120 140
15555
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typ. Reverse Current vs. Percent of
Rated Peak Reverse Voltage
Figure 3. Max. Peak Forward Surge Current vs.
Number of Cycles
Rev . A2, 24-Jun-982 (4)
Dimensions in mm
1N4001G/L–1N4007G/L
Vishay Lite–On Power Semiconductor
Case: molded plastic
Polarity: cathode band
Approx. weight: DO–41 0.30 grams,
A–405 0,20 grams
Mounting position: any
Marking: type number
14447
Rev . A2, 24-Jun-98 3 (4)
1N4001G/L–1N4007G/L
Vishay Lite–On Power Semiconductor
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use V ishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly , any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Rev . A2, 24-Jun-984 (4)
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