Vishay 1N3879(R) Series, 1N3889(R) Series, 6FL(R) Series, 12FL(R) Series, 16FL(R) Series Data Sheet

DO-203AA (DO-4)

1N3879(R), 1N3889(R), 6/12/16FL(R) Series

Vishay High Power Products

Fast Recovery Diodes

(Stud Version), 6/12/16 A

FEATURES

• Short reverse recovery time

• Low stored charge

• Wide current range

• Excellent surge capabilities

• Standard JEDEC types

• Stud cathode and stud anode versions

• Fully characterized reverse recovery conditions

• RoHS compliant

TYPICAL APPLICATIONS

• DC power supplies

RoHS

COMPLIANT

PRODUCT SUMMARY

I

F(AV)

6/12/16 A

• Converters

• Choppers

• Ultrasonic systems

• Freewheeling diodes

MAJOR RATINGS AND CHARACTERISTICS

•Inverters

SYMBOL CHARACTERISTICS

I

F(AV)

I

F(RMS)

I

FSM

2

I

t

2

I

√t 363 856 1452 1452 2290 I2√s

V

RRM

t

rr

T

J

Note

(1)

JEDEC registered values

TC = 100 °C 6

50 Hz 72 145 110 145 180

60 Hz 75

50 Hz 26 103 60 103 160

60 Hz 23 94 55 94 150

Range 50 to 400

Range - 65 to 150 °C

1N3879. TO

1N3883.

(1)

9.5199.519 25 A

(1)

1N3889. TO

1N3893.

(1)

12

(1)

150

(1)

See Recovery Characteristics table ns

6FL.. 12FL.. 16FL.. UNITS

61216A

115 150 190

50 to 1000 V

A

A2s

Document Number: 93138 For technical questions, contact: [e-mail]
Revision: 26-Sep-08 1

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1N3879(R), 1N3889(R), 6/12/16FL(R) Series

Vishay High Power Products

Fast Recovery Diodes

(Stud Version), 6/12/16 A

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

, MAXIMUM

V

RRM

TYPE
NUMBER

VOLTAGE

CODE

REPETITIVE PEAK AND

OFF-STATE VOLTAGE

V

1N3879.

50 75

1N3880. 100 150

1N3881. 200 250

-

1N3882. 300 350

1N3883. 400 450

1N3889.

50 75

1N3890. 100 150

1N3891. 200 250

-

1N3892. 300 350

1N3893. 400 450

550 75

10 100 150

6FL..
12FL..
16FL..

20 200 275

40 400 500

60 600 725

80 800 950

100 1000 1250

Note

(1)

JEDEC registered values

V

RSM

NON-REPETITIVE

PEAK VOLTAGE

, MAXIMUM

V

I

MAXIMUM

RRM

AT T

= 25 °C

J

µA

(1)

15

(1)

25

I

MAXIMUM

RRM

AT T

= 100 °C

J

mA

(1)

1.0

(1)

3.0

50 - 6.0

I

MAXIMUM

RRM

AT T

= 150 °C

J

mA

(1)

3.0

(1)

5.0

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS

Maximum average forward current
at case temperature

Maximum RMS current I

Maximum peak, one-cycle
non-repetitive forward current

Maximum I

Maximum I

2

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 363 856 1452 2290 A2√s

Maximum forward voltage drop V

I

F(AV)

F(RMS)

I

FSM

FM

180° conduction, half sine wave
DC

t = 10 ms

t = 8.3 ms 90 135 180 225

t = 10 ms

t = 8.3 ms

t = 10 ms

t = 8.3 ms 33 78 130 210

t = 10 ms

t = 8.3 ms 23 55 94 150

TJ = 25 °C; IF = Rated I

T

= 100 °C; IFM = π x rated I

C

No voltage
reapplied

100 % V

RRM

reapplied

No voltage
reapplied

100 % V

RRM

reapplied

F(AV)

Sinusoidal
half wave,
initial
T

= 150 °C

J

(DC)

F(AV)

1N3879.
1N3883.

(1)

6

100 100 100 100 °C

9.5 9.5 19 25

85 130 170 215

72 110 145 180

(1)

75

36 86 145 230

26 60 103 160

(1)

1.4

(1)

1.5

Note

(1)

JEDEC registered values

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2 Revision: 26-Sep-08

6FL..

6

115

1.4

1.5

1N3889.
1N3893.

16FL.. UNITS

12FL..

(1)

12

16 A

A

(1)

150

190

A2s

(1)

(1)

1.4 V

1.5 V

1.4

1.5

Document Number: 93138

1N3879(R), 1N3889(R), 6/12/16FL(R) Series

Fast Recovery Diodes

Vishay High Power Products

(Stud Version), 6/12/16 A

RECOVERY CHARACTERISTICS

6FL..

PARAMETER SYMBOL TEST CONDITIONS

TJ = 25 °C, IF = 1 A to VR = 30 V,

/dt = 100 A/µs

Maximum reverse
recovery time

Maximum peak
recovery current

t

I

RM(REC)IFM

dI

rr

F

= 25 °C, dIF/dt = 25 A/µs,

T

J

I

= π x rated I

FM

= π x rated I

F(AV)

F(AV)

TJ = 25 °C, IF = 1 A to VR = 30 V,
dI

Maximum reverse
recovery charge

Q

rr

/dt = 100 A/µs

F

= 25 °C, dIF/dt = 25 A/µs,

T

J

I

= π x rated I

FM

F(AV)

1N3879.
1N3883.

300

1N3889.
1N3893.

150 150 - -

(1)

(1)

4

300

5

(1)

(1)

400 350 - -

400 400 - -

Note

(1)

JEDEC registered values

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS

Maximum junction operating
temperature range

Maximum storage temperature range T

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
case to heatsink

Allowable mounting torque

Approximate weight

Case style JEDEC DO-203AA (DO-4)

R

R

T

J

Stg

thJC

thCS

DC operation 2.5 2.0 1.6

Mounting surface, smooth,
flat and greased

Not lubricated threads

Lubricated threads

12FL..
16FL..

UNITS

S02 S05

ns

200 500

--

nC

1N3879.
1N3883.

1N3889.
1N3893.

6FL..

- 65 to 150

- 65 to 175

1.5

1.2

I

FM

12FL..

0.5

+ 0 - 10 %

(13)

+ 0 - 10 %

(10)

7g

0.25 oz.

t

rr

dir

dt

I

RM(REC)

Q

16FL.. UNITS

°C

°C/W

N · m

(lbf · in)

t

rr

Document Number: 93138 For technical questions, contact: [e-mail]

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Revision: 26-Sep-08 3

1N3879(R), 1N3889(R), 6/12/16FL(R) Series

Vishay High Power Products

Fast Recovery Diodes

(Stud Version), 6/12/16 A

ΔR

CONDUCTION ANGLE

Note

• The table above shows the increment of thermal resistance R

CONDUCTION

thJC

1N3879.
1N3883.

6FL..

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

180° 0.58 0.46 0.37 0.33 0.26 0.21

120° 0.60 0.48 0.39 0.58 0.46 0.37

60° 1.28 1.02 0.82 1.28 1.02 0.82

30° 2.20 1.76 1.41 2.20 1.76 1.41

1N3889.
1N3893.

12FL..

16FL..

1N3879.
1N3883.

6FL..

when devices operate at different conduction angles than DC

thJC

1N3889.
1N3893.

12FL..

16FL..

TEST CONDITIONS UNITS

T

= 150 °C K/W

J

Fig. 1 - Average Forward Current vs.

Maximum Allowable Case Temperature,

1N3879 and 6FL Series

Fig. 2 - Average Forward Current vs.

Maximum Allowable Case Temperature,

1N3889 and 12FL Series

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Fig. 4 - Reverse Recovery Time Test Waveform

Fig. 3 - Average Forward Current vs.

Maximum Allowable Case Temperature, 16FL Series

Document Number: 93138

1N3879(R), 1N3889(R), 6/12/16FL(R) Series

Fast Recovery Diodes

Vishay High Power Products

(Stud Version), 6/12/16 A

Fig. 5 - Current Rating Nomogram (Sinusoidal Waveforms), 1N3879 and 6FL Series

Fig. 6 - Current Rating Nomogram (Rectangular Waveforms), 1N3879 and 6FL Series

Fig. 7 - Current Rating Nomogram (Sinusoidal Waveforms), 1N3889 and 12FL Series

Document Number: 93138 For technical questions, contact: [e-mail]
Revision: 26-Sep-08 5

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1N3879(R), 1N3889(R), 6/12/16FL(R) Series

Vishay High Power Products

Fig. 8 - Current Rating Nomogram (Rectangular Waveforms), 1N3889 and 12FL Series

Fast Recovery Diodes

(Stud Version), 6/12/16 A

Fig. 9 - Current Rating Nomogram (Sinusoidal Waveforms), 16FL Series

Fig. 10 - Current Rating Nomogram (Rectangular Waveforms), 16FL Series

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6 Revision: 26-Sep-08

Document Number: 93138

1N3879(R), 1N3889(R), 6/12/16FL(R) Series

Fast Recovery Diodes

(Stud Version), 6/12/16 A

Fig. 11 - Maximum Forward Voltage vs. Forward Current,

1N3879 and 6FL Series

Vishay High Power Products

Fig. 14 - Maximum High Level Forward Power Loss vs.

Average Forward Current,

1N3889 and 12FL Series

Fig. 12 - Maximum High Level Forward Power Loss vs.

Average Forward Current,

1N3879 and 6FL Series

Fig. 13 - Maximum Forward Voltage vs. Forward Current,

1N3889 and 12FL Series

Document Number: 93138 For technical questions, contact: [e-mail]
Revision: 26-Sep-08 7

Fig. 15 - Maximum Forward Voltage vs. Forward Current,

16FL Series

Fig. 16 - Maximum High Level Forward Power Loss vs.

Average Forward Current,

16FL Series

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1N3879(R), 1N3889(R), 6/12/16FL(R) Series

Vishay High Power Products

Fig. 17a - Typical Reverse Recovery Time vs.

Rate of Fall of Forward Current, All Series ...S02

Fast Recovery Diodes

(Stud Version), 6/12/16 A

Fig. 18b - Typical Recovered Charge vs.

Rate of Fall of Forward Current, All Series ...S05

Fig. 17b - Typical Recovered Charge vs.

Rate of Fall of Forward Current, All Series ...S02

Fig. 18a - Typical Reverse Recovery Time vs.

Rate of Fall of Forward Current, All Series ...S05

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Fig. 19a - Typical Reverse Recovery Time vs.

Rate of Fall of Forward Current, All Series ...S10

Fig. 19b - Typical Recovered Charge vs.

Rate of Fall of Forward Current, All Series ...S10

Document Number: 93138

1N3879(R), 1N3889(R), 6/12/16FL(R) Series

Fast Recovery Diodes

(Stud Version), 6/12/16 A

Fig. 20 - Maximum Non-Repetitive Surge Current vs.

Number of Current Pulses, 1N3879 Series

Vishay High Power Products

Fig. 22 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses, 1N3889 and 12FL Series

Fig. 21 - Maximum Non-Repetitive Surge Current vs.

Number of Current Pulses, 6FL Series

Fig. 24 - Maximum Transient Thermal Impedance,

Junction to Case vs. Pulse Duration, All Series

Document Number: 93138 For technical questions, contact: [e-mail]
Revision: 26-Sep-08 9

Fig. 23 - Maximum Non-Repetitive Surge Current vs.

Number of Current Pulses, 16FL Series

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1N3879(R), 1N3889(R), 6/12/16FL(R) Series

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

16 F L R 60 M S02

1 - Current code I

2 - F = Diode

3 - Omit = Standard recovery diode

L = Only for fast diode

4 - Omit = Stud forward polarity

R = Stud reverse polarity

5

- Voltage code x 10 = V

- Outlines:

6

Omit = Stud base UNF thread
M = Stud base metric thread

7

-trr code only for fast diode (see Recovery Characteristics table)

Fast Recovery Diodes

(Stud Version), 6/12/16 A

67

51324

= Exact current rating

(AVG)

(see Voltage Ratings table)

RRM

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95311

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10 Revision: 26-Sep-08

Document Number: 93138

DO-203AB (DO-5) for 40HFL, 70HFL and 85HFL

DIMENSIONS FOR 40HFL/70HFL in millimeters (inches)

Ø 14.6 (0.57)

6.1/7

(0.24/0.27)

4 (0.16)

4 (0.16) MIN.

25.4 (1) MAX.

10.8 (0.42)

11.4 (0.45)

Outline Dimensions

Vishay Semiconductors

11.1 ± 0.4

(0.44 ± 0.02)

1.20 (0.04)

1/4" 28UNF-2A

for metric devices: M6 x 1

17.40 (0.68)

Document Number: 95312 For technical questions, contact: [e-mail]
Revision: 29-Sep-08 1

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Outline Dimensions

Vishay Semiconductors

DO-203AB (DO-5) for

40HFL, 70HFL and 85HFL

DIMENSIONS FOR 85HFL in millimeters (inches)

Ø 15 (0.59)

6.1/7

(0.24/0.27)

25.4 (1) MAX.

11.1 ± 0.4

(0.44 ± 0.02)

4 (0.16)

4 (0.16) MIN.

10.8 (0.42)

11.4 (0.45)

1.20 (0.04)

1/4" 28UNF-2A

for metric devices: M6 x 1

17.35 (0.68)

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2 Revision: 29-Sep-08

Document Number: 95312

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