1N1...A, 1N36..A Series
Vishay High Power Products
Medium Power
Silicon Rectifier Diodes, 12 A
FEATURES
• Voltage ratings from 50 to 1000 V
• High surge capability
• Low thermal impedance
• High temperature rating
• Can be supplied as JAN and JAN-TX devices in
accordance with MIL-S-19500/260
RoHS
COMPLIANT
DO-203AA (DO-4)
• RoHS compliant
PRODUCT SUMMARY
I
F(AV)
12 A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
F(AV)
I
FSM
I2t
T
V
C
RRM
T
C
50 Hz 230
60 Hz 240
50 Hz 260
60 Hz 240
Range 50 to 1000
Note
(1)
JEDEC registered values
(1)
12
(1)
150
(1)
- 65 to 200 °C
(1)
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
, MAXIMUM
RRM
REPETITIVE PEAK
TYPE NUMBER
(2)
REVERSE VOLTAGE
V
= - 65 °C TO 200 °C TC = - 65 °C TO 200 °C TC = - 65 °C TO 200 °C TC = - 65 °C TO 200 °C
T
C
1N1199A 50
1N1200A 100
1N1201A 150
1N1202A 200
1N1203A 300
1N1204A 400
1N1205A 500
1N1206A 600
1N3670A 700
1N3671A 800
1N3672A 900
1N3673A 1000
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
V
, MAXIMUM RMS
R(RMS)
REVERSE VOLTAGE
V
(1)
35
(1)
70
(1)
105
(1)
140
(1)
210
(1)
280
(1)
350
(1)
420
490 900
560 1000
630 1100
700 1200
NON-REPETITIVE PEAK
Notes
(1)
JEDEC registered values
(2)
Basic part number indicates cathode to case; for anode to case, add “R” to part number, e.g., 1N1199RA
, MAXIMUM
V
RSM
REVERSE VOLTAGE
V
(1)
100
(1)
200
(1)
300
(1)
350
(1)
450
(1)
600
(1)
700
(1)
800
(1)
(1)
(1)
(1)
V
, MAXIMUM DIRECT
RM
REVERSE VOLTAGE
A
°C
A
A2s
V
V
50
100
150
200
300
400
500
600
700
800
900
1000
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
1N1...A, 1N36..A Series
Vishay High Power Products
Medium Power
Silicon Rectifier Diodes, 12 A
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
(1)
Maximum average forward current
at case temperature
I
F(AV)
180° sinusoidal conduction
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse
Half cycle 60 Hz sine wave
Maximum peak one cycle
non-repetitive surge current
I
FSM
or 5 ms rectangular pulse
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse
Half cycle 60 Hz sine wave
or 5 ms rectangular pulse
2
Maximum I
Maximum I
t for fusing
2
t for individual
device fusing
Maximum I
device fusing
2
√t for individual
I
Maximum forward voltage drop V
= 50
V
RRM
V
= 100 2.5
RRM
V
= 150 2.25
RRM
V
= 200 2.0
RRM
V
= 300 1.75
RRM
V
= 400 1.5
Maximum average
reverse current
RRM
V
= 500 1.25
RRM
V
= 600 1.0
RRM
V
= 700 0.9
RRM
V
= 800 0.8
RRM
V
= 900 0.7
RRM
V
= 1000 0.6
RRM
I
R(AV)
I
2
√t
t = 10 ms
t = 8.3 ms 240
2
t
t = 10 ms
t = 8.3 ms 340
(2)
t = 0.1 to 10 ms, V
I
FM
(3)
= 12 A (38 A peak), TC = 25 °C 1.35
F(AV)
Maximum rated I
Notes
(1)
JEDEC registered values
(2)I2
t for time tx = I2√t x √t
(3)
Maximum peak reverse current (IRM) under same conditions ≈ 2 x rated I
x
Following any rated load
condition and with rated
V
applied
RRM
Following any rated load
condition and with V
RRM
applied following surge = 0
With rated V
RRM
applied
following surge,
initial T
= 200 °C
J
With V
surge, initial T
= 0 following surge 3715 A2√s
RRM
and T
F(AV)
C
R(AV)
= 0 following
RRM
J
= 200 °C
12
150
230
240
275
285
260
370
3.0
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
(1)
A
°C
A
A
V
mA
2
s
1N1...A, 1N36..A Series
Medium Power
Vishay High Power Products
Silicon Rectifier Diodes, 12 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating case and
storage temperature range
Maximum internal thermal
resistance, junction to case
Thermal resistance,
case to sink
minimum
maximum 1.69 (15)
Mounting torque
Approximate weight
Case style JEDEC DO-203AA (DO-4)
Note
(1)
JEDEC registered values
minimum
maximum 1.30 (11.55)
minimum
maximum 1.43 (12.65)
T
, T
C
Stg
R
thJC
R
thCS
DC operation 2.0
Mounting surface, smooth, flat and greased 0.5
Torque applied to nut; non-lubricated threads
Torque applied to nut; lubricated threads
Torque applied to device case; lubricated threads
- 65 to 200
1.36 (12)
1.07 (9.45)
1.17 (10.35)
(1)
(1)
(lbf · in)
7.0 g
0.25 oz.
°C
°C/W
N · m
1N1...A, 1N36..A Series
Vishay High Power Products
Fig. 1 - Average Forward Current vs.
Maximum Allowable Case Temperature
Medium Power
Silicon Rectifier Diodes, 12 A
Fig. 4 - Maximum Forward Voltage vs. Forward Current
Fig. 2 - Maximum Low Level Forward Power Loss vs.
Average Forward Current
Fig. 3 - Maximum High Level Forward Power Loss vs.
Average Forward Current
Fig. 5 - Maximum Transient Thermal Impedance,
Junction to Case vs. Pulse Duration
Fig. 6 - Maximum Non-Repetitive 50 Hz Surge Current vs.
Number of Current Pulses
DIMENSIONS in millimeters (inches)
Outline Dimensions
Vishay High Power Products
DO-203AA (DO-4)
5.50 (0.22) MIN.
10.20 (0.40)
MAX.
11.50 (0.45)
10.70 (0.42)
+ 0.3
2
0
+ 0.01
(0.08 )
3.30 (0.13)
4.00 (0.16)
0
10/32" UNF-2A
For metric devices: M5 x 0.8
Ø 1.80 ± 0.20
(Ø 0.07 ± 0.01)
3.50 (0.14)
0.8 ± 0.1
(0.03 ± 0.004)
R 0.40
R (0.02)
20.30 (0.80) MAX.
Ø 6.8 (0.27)
11 (0.43)
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