Vishay 1N1...A Series, 1N36..A Series Data Sheet
1N1...A, 1N36..A Series
Vishay High Power Products
Medium Power
Silicon Rectifier Diodes, 12 A
DO-203AA (DO-4) |
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PRODUCT SUMMARY |
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IF(AV) |
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12 A |
FEATURES
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Voltage ratings from 50 to 1000 V |
RoHS |
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High surge capability |
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COMPLIANT |
•Low thermal impedance
•High temperature rating
•Can be supplied as JAN and JAN-TX devices in accordance with MIL-S-19500/260
•RoHS compliant
MAJOR RATINGS AND CHARACTERISTICS |
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PARAMETER |
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TEST CONDITIONS |
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VALUES |
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UNITS |
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IF(AV) |
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12 (1) |
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A |
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T |
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150 (1) |
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°C |
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C |
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IFSM |
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50 Hz |
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230 |
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A |
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60 Hz |
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240 (1) |
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I2t |
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50 Hz |
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260 |
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A2s |
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60 Hz |
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240 |
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TC |
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- 65 to 200 |
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°C |
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VRRM |
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Range |
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50 to 1000 (1) |
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V |
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Note |
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(1) JEDEC registered values |
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ELECTRICAL SPECIFICATIONS |
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VOLTAGE RATINGS |
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VRRM, MAXIMUM |
VR(RMS), MAXIMUM RMS |
VRSM, MAXIMUM |
VRM, MAXIMUM DIRECT |
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REPETITIVE PEAK |
NON-REPETITIVE PEAK |
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REVERSE VOLTAGE |
REVERSE VOLTAGE |
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TYPE NUMBER (2) |
REVERSE VOLTAGE |
REVERSE VOLTAGE |
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V |
V |
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V |
V |
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TC = - 65 °C TO 200 °C |
TC = - 65 °C TO 200 °C |
TC = - 65 °C TO 200 °C |
TC = - 65 °C TO 200 °C |
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1N1199A |
50 (1) |
35 (1) |
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100 (1) |
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50 (1) |
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1N1200A |
100 (1) |
70 (1) |
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200 (1) |
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100 (1) |
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1N1201A |
150 (1) |
105 (1) |
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300 (1) |
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150 (1) |
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1N1202A |
200 (1) |
140 (1) |
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350 (1) |
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200 (1) |
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1N1203A |
300 (1) |
210 (1) |
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450 (1) |
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300 (1) |
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1N1204A |
400 (1) |
280 (1) |
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600 (1) |
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400 (1) |
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1N1205A |
500 (1) |
350 (1) |
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700 (1) |
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500 (1) |
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1N1206A |
600 (1) |
420 (1) |
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800 (1) |
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600 (1) |
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1N3670A |
700 (1) |
490 |
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900 (1) |
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700 (1) |
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1N3671A |
800 (1) |
560 |
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1000 (1) |
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800 (1) |
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1N3672A |
900 (1) |
630 |
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1100 (1) |
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900 (1) |
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1N3673A |
1000 (1) |
700 |
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1200 (1) |
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1000 (1) |
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Notes |
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(1)JEDEC registered values
(2)Basic part number indicates cathode to case; for anode to case, add “R” to part number, e.g., 1N1199RA
1N1...A, 1N36..A Series
Vishay High Power Products |
Medium Power |
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Silicon Rectifier Diodes, 12 A |
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FORWARD CONDUCTION |
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PARAMETER |
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SYMBOL |
TEST CONDITIONS |
VALUES |
UNITS |
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Maximum average forward current |
IF(AV) |
180° sinusoidal conduction |
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12 (1) |
A |
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at case temperature |
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150 (1) |
°C |
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Half cycle 50 Hz sine wave |
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Following any rated load |
230 |
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or 6 ms rectangular pulse |
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condition and with rated |
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Half cycle 60 Hz sine wave |
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VRRM applied |
240 (1) |
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Maximum peak one cycle |
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or 5 ms rectangular pulse |
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IFSM |
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A |
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non-repetitive surge current |
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Half cycle 50 Hz sine wave |
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Following any rated load |
275 |
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or 6 ms rectangular pulse |
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condition and with VRRM |
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Half cycle 60 Hz sine wave |
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applied following surge = 0 |
285 |
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or 5 ms rectangular pulse |
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Maximum I2t for fusing |
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t = 10 ms |
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With rated VRRM applied |
260 |
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following surge, |
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t = 8.3 ms |
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240 |
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I2t |
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initial TJ = 200 °C |
A2s |
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Maximum I2t for individual |
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t = 10 ms |
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With V = 0 following |
370 |
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RRM |
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device fusing |
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t = 8.3 ms |
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surge, initial TJ = 200 °C |
340 |
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Maximum I2√t for individual |
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I2√t (2) |
t = 0.1 to 10 ms, VRRM = 0 following surge |
3715 |
A2√s |
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device fusing |
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Maximum forward voltage drop |
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VFM |
IF(AV) = 12 A (38 A peak), TC = 25 °C |
1.35 (1) |
V |
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VRRM = 50 |
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3.0 (1) |
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V |
= 100 |
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2.5 (1) |
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RRM |
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V |
= 150 |
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2.25 (1) |
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RRM |
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V |
= 200 |
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2.0 (1) |
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RRM |
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V |
= 300 |
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1.75 (1) |
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RRM |
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Maximum average |
V |
= 400 |
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1.5 (1) |
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RRM |
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IR(AV) (3) |
Maximum rated IF(AV) and TC |
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mA |
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reverse current |
V |
= 500 |
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1.25 (1) |
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RRM |
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V |
= 600 |
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1.0 (1) |
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RRM |
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V |
= 700 |
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0.9 (1) |
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RRM |
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V |
= 800 |
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0.8 (1) |
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RRM |
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V |
= 900 |
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0.7 (1) |
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RRM |
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VRRM = 1000 |
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0.6 (1) |
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Notes
(1)JEDEC registered values
(2)I2t for time tx = I2√t x √tx
(3)Maximum peak reverse current (IRM) under same conditions ≈ 2 x rated IR(AV)
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