1N1183, 1N3765, 1N1183A, 1N2128A Series
Vishay High Power Products
Power Silicon Rectifier Diodes,
35 A/40 A/60 A
DESCRIPTION/FEATURES
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Low leakage current series |
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Good surge current capability up to 1000 A |
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Can be supplied to meet stringent military, aerospace and |
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other high reliability requirements |
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• Compliant to RoHS directive 2002/95/EC |
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DO-203AB (DO-5) |
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PRODUCT SUMMARY |
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IF(AV) |
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35 A/40 A/60 A |
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MAJOR RATINGS AND CHARACTERISTICS |
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PARAMETER |
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TEST CONDITIONS |
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1N1183 |
1N3765 |
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1N1183A |
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1N2128A |
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UNITS |
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IF(AV) |
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35 (1) |
35 (1) |
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40 (1) |
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60 (1) |
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A |
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T |
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140 (1) |
140 (1) |
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150 (1) |
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140 (1) |
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°C |
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C |
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IFSM |
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50 Hz |
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480 |
380 |
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765 |
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860 |
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A |
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60 Hz |
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500 (1) |
400 (1) |
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800 (1) |
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900 (1) |
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I2t |
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50 Hz |
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1140 |
730 |
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2900 |
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3700 |
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A2s |
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60 Hz |
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1040 |
670 |
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2650 |
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3400 |
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I2√t |
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16 100 |
10 300 |
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41 000 |
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52 500 |
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A2√s |
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VRRM |
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Range |
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50 to 600 (1) |
700 to 1000 (1) |
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50 to 600 (1) |
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50 to 600 (1) |
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Note |
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(1) JEDEC registered values |
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ELECTRICAL SPECIFICATIONS |
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VOLTAGE RATINGS |
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VRRM, MAXIMUM REPETITIVE |
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VRM, MAXIMUM DIRECT |
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TYPE NUMBER |
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PEAK REVERSE VOLTAGE |
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REVERSE VOLTAGE |
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(TJ = - 65 °C TO 200 °C (2)) |
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(TJ = - 65 °C TO 200 °C (2)) |
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V |
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V |
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1N1183 |
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1N1183A |
1N2128A |
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50 (1) |
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50 (1) |
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1N1184 |
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1N1184A |
1N2129A |
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100 (1) |
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100 (1) |
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1N1185 |
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1N1185A |
1N2130A |
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150 (1) |
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150 (1) |
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1N1186 |
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1N1186A |
1N2131A |
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200 (1) |
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200 (1) |
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1N1187 |
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1N1187A |
1N2133A |
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300 (1) |
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300 (1) |
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1N1188 |
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1N1188A |
1N2135A |
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400 (1) |
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400 (1) |
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1N1189 |
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1N1189A |
1N2137A |
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500 (1) |
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500 (1) |
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1N1190 |
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1N1190A |
1N2138A |
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600 (1) |
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600 (1) |
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1N3765 |
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700 (1) |
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700 (1) |
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1N3766 |
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800 (1) |
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800 (1) |
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1N3767 |
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900 (1) |
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900 (1) |
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1N3768 |
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1000 (1) |
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1000 (1) |
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Notes
(1)JEDEC registered values
(2)For 1N1183 Series and 1N3765 Series TC = - 65 °C to 190 °C
•Basic type number indicates cathode to case. For anode to case, add “R” to part number, e.g., 1N1188R, 1N3766R, 1N1186AR, 1N2135RA
1N1183, 1N3765, 1N1183A, 1N2128A Series
Vishay High Power Products |
Power Silicon Rectifier Diodes, |
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35 A/40 A/60 A |
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FORWARD CONDUCTION |
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PARAMETER |
SYMBOL |
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TEST CONDITIONS |
1N1183 |
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1N3765 |
1N1183A |
1N2128A |
UNITS |
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Maximum average forward current |
IF(AV) |
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1-phase operation, |
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35 (1) |
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35 (1) |
40 (1) |
60 (1) |
A |
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at case temperature |
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180° sinusoidal conduction |
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140 (1) |
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140 (1) |
150 (1) |
140 (1) |
°C |
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Half cycle 50 Hz |
Following any |
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sine wave or 6 ms |
480 |
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380 |
765 |
860 |
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rated load |
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rectangular pulse |
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condition and |
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Half cycle 60 Hz |
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with rated |
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sine wave or 5 ms |
500 (1) |
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400 (1) |
800 (1) |
900 (1) |
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VRRM applied |
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Maximum peak one cycle |
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rectangular pulse |
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IFSM |
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non-repetitive surge current |
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Half cycle 50 Hz |
Following any |
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sine wave or 6 ms |
rated load |
570 |
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455 |
910 |
1000 |
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rectangular pulse |
condition and |
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Half cycle 60 Hz |
with ½ VRRM |
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sine wave or 5 ms |
applied following |
595 |
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475 |
950 |
1050 |
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rectangular pulse |
surge = 0 |
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t = 10 ms |
With rated VRRM |
1140 |
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730 |
2900 |
3700 |
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applied following |
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Maximum I2t for fusing |
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t = 8.3 ms |
surge, initial |
1040 |
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670 |
2650 |
3400 |
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TJ = TJ maximum |
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I2t |
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A2s |
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t = 10 ms |
With VRRM = 0 |
1610 |
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1030 |
4150 |
5250 |
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Maximum I2t for individual |
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following surge, |
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device fusing |
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t = 8.3 ms |
initial TJ = |
1470 |
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940 |
3750 |
4750 |
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TJ maximum |
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Maximum I2√t for individual |
I2√t (2) |
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t = 0.1 to 10 ms, |
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16 100 |
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10 300 |
41 500 |
52 500 |
A2√s |
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device fusing |
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VRRM = 0 following surge |
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Maximum peak forward voltage |
VFM |
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TJ = 25 °C |
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1.7 (1) |
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1.8 (1) |
1.3 (1) |
1.3 (1) |
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at maximum forward current (IFM) |
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110 |
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126 |
188 |
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VRRM = 700 |
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5.0 (1) |
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VRRM = 800 |
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Maximum rated IF(AV) and TC |
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4.0 (1) |
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Maximum average |
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VRRM = 900 |
IR(AV) |
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3.0 (1) |
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mA |
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reverse current |
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VRRM = 1000 |
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2.0 (1) |
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Maximum rated I |
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and T |
10 (1) |
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2.5 (1) |
10 (1) |
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F(AV) |
C |
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Notes
(1)JEDEC registered values
(2)I2t for time tx = I2√t x √tx
1N1183, 1N3765, 1N1183A, 1N2128A Series
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Power Silicon Rectifier Diodes, |
Vishay High Power Products |
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35 A/40 A/60 A |
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THERMAL AND MECHANICAL SPECIFICATIONS |
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PARAMETER |
SYMBOL |
TEST CONDITIONS |
1N1183 |
1N3765 |
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1N1183A |
1N2128A |
UNITS |
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Maximum operating |
TC |
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- 65 to 190 (1) |
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- 65 to 200 |
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case temperature range |
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°C |
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Maximum storage |
TStg |
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- 65 to 175 (1) |
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- 65 to 200 |
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temperature range |
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Maximum internal thermal |
RthJC |
DC operation |
1.00 (1) |
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1.1 (1) |
0.65 (1) |
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resistance, junction to case |
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°C/W |
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Thermal resistance, |
RthCS |
Mounting surface, smooth, flat and greased |
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0.25 |
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case to sink |
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Not lubricated thread, tighting on nut (2) |
3.4 (30) |
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Maximum allowable |
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Lubricated thread, tighting on nut (2) |
2.3 (20) |
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mounting torque |
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(lbf · in) |
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Not lubricated thread, tighting on hexagon (3) |
4.2 (37) |
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(+ 0 %, - 10 %) |
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Lubricated thread, tighting on hexagon (3) |
3.2 (28) |
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Approximate weight |
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17 |
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0.6 |
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oz. |
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Case style |
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JEDEC |
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DO-203AB (DO-5) |
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Notes
(1)JEDEC registered values
(2)Recommended for pass-through holes
(3)Recommended for holed threaded heatsinks
Fig. 1 - Maximum Allowable Case Temperature vs. |
Fig. 2 - Typical Low Level Forward Power Loss vs. |
Average Forward Current, 1N1183 and 1N3765 Series |
Average Forward Current (Sinusoidal Current Waveform), |
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1N1183 and 1N3765 Series |