Vishay 181RKI SERIES Data Sheet

DISCRETE POWER DIODES and THYRISTORS
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Bulletin I25153/B
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181RKI SERIES
Features
Hermetic glass-metal seal dv/dt = 1000V/µs option International standard case TO-209AB (TO-93) Threaded studs UNF 3/4 - 16UNF2A
Typical Applications
DC motor controls Controlled DC power supplies AC controllers
Major Ratings and Characteristics
Parameters 181RKI Units
I
T(AV)
180 A
180A
@ T
C
I
T(RMS)
I
TSM
2
I
t @ 50Hz 72 KA2s
V
DRM/VRRM
t
q
T
J
@ 50Hz 3800 A @ 60Hz 4000 A
@ 60Hz 66 KA
typical 100 µs
80 °C
285 A
400 to 1000 V
- 40 to 125 °C
2
s
case style
TO-209AB (TO-93)
181RKI Series
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ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
DRM/VRRM
, max. repetitive V
Type number Code peak and off-state voltage repetitive peak voltage
V V mA
40 400 500
181RKI 80 800 900 30
100 1000 1100
On-state Conduction
Parameter 181RKI Units Conditions
, maximum non- I
RSM
DRM/IRRM
@ TJ = TJ max.
max.
I
T(AV)
Max. average on-state current 180 A 180° conduction, half sine wave @ Case temperature 80 °C
I
T(RMS)
I
TSM
Max. RMS on-state current 285 DC @ 79°C case temperature Max. peak, one-cycle 3800 t = 10ms No voltage non-repetitive surge current 4000 A t = 8.3ms reapplied
3500 t = 10ms 100% V
RRM
3660 t = 8.3ms reapplied Sinusoidal half wave,
2
I
t Maximum I2t for fusing 72 t = 10ms No voltage Initial TJ = TJ max.
66 t = 8.3ms reapplied 61 t = 10ms 100% V
KA2s
RRM
56 t = 8.3ms reapplied
2
I
t Maximum I2√t for fusing 720 KA2√s t = 0.1 to 10ms, no voltage reapplied
V
V
r
t1
r
t2
Low level value of threshold
T(TO)1
voltage High level value of threshold
T(TO)
2
voltage Low level value of on-state slope resistance High level value of on-state
slope resistance
0.83 (16.7% x π x I V
0.89 (I > π x I
T(AV)
0.92 (16.7% x π x I
m
0.81 (I > π x I
T(AV)
< I < π x I
T(AV)
),TJ = TJ max.
< I < π x I
T(AV)
),TJ = TJ max.
), TJ = TJ max.
T(AV)
), TJ = TJ max.
T(AV)
12
V I
H
I
L
Max. on-state voltage 1.35 V Ipk= 570A, TJ = TJ max, tp = 10ms sine pulse
TM
Maximum holding current 600 Typical latching current 1000
Switching
Parameter 181RKI Units Conditions
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20, tr ≤1µs
of turned-on current T
t
d
t
q
Typical delay time 1.0
Typical turn-off time 100
mA T
300 A/µs
µs
2222222222222
= 25°C, anode supply 12V resistive load
J
= TJ max, anode voltage 80% V
J
Gate current 1A, dig/dt = 1A/µs V
= 0.67% V
d
I
= 50A, TJ = TJ max, di/dt = 10A/µs, VR = 100V
TM
dv/dt
= 20V/µs
DRM, TJ
= 25°C
DRM
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